Datasheet SHF-0298 Datasheet (Stanford Microdevices)

SHF-0298

DC-10 GHz, 1 Watt
AIGaAs/GaAs HFET

Product Features

• AIGaAs/GaAs Heterostructure FET

T echnology

• High Power Added Efficiency: Up to 40%

• 1 Watt Output Power at 1dB Compression

• Low Cost Ceramic Package

• +40dBm Output 3rd Order Intercept Point

Applications

• Analog and Digital Wireless Systems

• VSAT

Product Description

Stanford Microdevices’ SHF-0298 series is a Al/GaAs/
GaAs Heterostructure FET housed in a low-cost ceramic
package. HFET technology improves breakdown voltage
for high drain voltage operation. Its low Schottky leakage
current improves power added efficiency.

These HFETs are an ideal choice for high dynamic range,
high intercept point requirements. Its output power at 1dB
gain compression is +30dBm when biased at +9V and
300mA.

These devices have 0.5 micron gate lengths with a total
gate periphery of 2400 microns. These transistors are
proven gold based metallization and nitride passivation.

Symbol Param eters: Test Conditions Units Min. Typ . Max.

P

1dB

Output Pow er at 1dB Com pression:
Vds = 9.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

dBm

30
30

30.3

30.3

G

1dB

Gain at P1dB:
Vds = 9.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

dB

14
11

15
12

PAE

Po wer Add ed E fficiency:
Vds = 9.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

%
%

40
40

TOIP

Output Third Order Intercept Point
Vds = 9.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

dBm
dBm

40
40

P

1dB

Output Pow er at 1dB Com pression:
Vds = 5.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

dBm

26
26

27
27

G

1dB

Gain at P1dB:
Vds = 5.0V, Ids = 300mA

f = 0.9 GH z
f = 1.9 GH z

dB

13
10

14
11

I

DSS

Saturated Drain Current:
Vds = 3.0V, Vgs = 0V

m A 400 650 900

G

M

Tranconductance:
Vds = 3.0V, Vgs = 0V

m S 250 375 500

V

P

Pinch-Off Voltage:
V ds = 3.0 V, Id s = 1m A

V -4.0 -2.2 -0.5

Vbgs G ate-to-Source Breakdown Voltage V -30 -22 -17
Vbgd G ate-to-Drain Breakdow n Voltage V -30 -22 -17

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Electrical Specifications at Ta = 25C

Output Power vs. Frequency

Vds=9V, Ids= 300mA

27

28

29

30

31

32

0246810

GHz

dBm

3-29

High Power GaAs FETs

SHF-0298 DC-10 GHz 1 Watt AIGaAs/GaAs HFET

|S11| vs. Frequency

|S21| vs. Frequency

|S12| vs. Frequency

|S22| vs. Frequency

TOIP vs. Frequency

Typical S-Parameters Vds= 9V, Id= 300mA

Freq GHz |S 11| S11 Ang |S 21| S21 Ang |S12| S12 Ang |S 22| S22 A ng

.100

0.980 -24 9.20 176 0.01 87 0.20 -115

.500

0.890 -172 8.71 117 0.04 35 0.38 -136

1.00

0.900 -128 7.75 107 0.04 29 0.45 -150

2.00

0.890 -1 5 3 5 .51 92 0.04 2 1 0.4 8 -1 56

3.00

0.890 -1 5 8 3 .61 78 0.04 2 0 0.5 1 -1 48

4.00

0.890 -1 6 3 2 .32 71 0.04 2 2 0.5 4 -1 50

5.00

0.890 -1 6 8 1 .92 59 0.04 2 3 0.5 7 -1 52

6.00

0.890 -1 7 0 1 .78 53 0.03 3 1 0.5 9 -1 50

7.00

0.900 -1 7 2 1 .68 48 0.03 5 1 0.6 3 -1 50

8.00

0.920 -1 7 4 1 .58 37 0.03 5 6 0.6 8 -1 54

9.00

0.930 -1 7 6 1 .50 39 0.03 5 3 0.7 3 -1 58

10.00

0.940 -1 7 8 1 .42 30 0.03 5 8 0.7 5 -1 62

11 .00

0.950 -1 8 0 1 .34 21 0.03 6 3 0.7 7 -1 64

12.00

0.960 -1 8 2 1 .26 11 0.03 6 8 0.7 9 -1 66

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

-20

-15

-10

-5

0

DC246810

-50

-40

-30

-20

-10

0

DC246810

0

4

8

12

16

20

24

28

DC246810

-20

-15

-10

-5

0

DC246810

GHz

dB

GHz

dB

GHz

dB

37

38

39

40

41

42

DC246810

(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)

Typical Performance at 25

°°

°°

°

C (Vds = 9V , Ids = 300mA)

GHz

dB

GHz

dBm

High Power GaAs FETs

3-30

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

SHF-0298 DC-10 GHz 1 Watt AIGaAs/GaAs HFET

Absolute Maximum Ratings

Parameter Symbol

Absolute

Maximum

Drain-to-Source Voltage V

DS

+10V

Gate-to-Source Voltage V

GS

-17V

Drain Current I

DS

IDSS

Operating Temperature T

OP

-45 C to +85 C

RF Input Power P

IN

100 mW

Channel Temperature T

CH

+175 C

Storage Temperature T

STG

-65 to +150 C

Thermal Resistance,

Junction-Ground Lead

R

TH

35.5 degC/W

Notes:

1. Operation of this device above any one of these
parameters may cause permanent damage.

2. Mounting Surface T emperature = 25° C

Part Number Devices Per Tray

SHF-0298 100

Part Number Ordering Information

Outline Drawing

Pin Designation

1Gate
2Source
3Drain

3-31

High Power GaAs FETs