Page 1
Preliminary
Preliminary
Product Description
SHF-0289
Stanford Microdevices’ SHF-0289 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
DC-3 GHz, 1.0 Watt
GaAs HFET
Output power at 1dB compression for the SHF-0289 is +30dBm
when biased for Class AB operation at 8V and 250mA. The
+46 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Adequate heat sinking must be provided for this part to avoid
exceeding the maximum junction temperature. Methods include
the use of screws near the device, and filled vias beneath the
part to the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.
Maximum Available Gain vs Frequency
Vds = 8V, Idq = 250mA
30
25
20
15
(dB)
Max
10
G
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Product Features
• Patented GaAs Heterostructure FET
Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit)
Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
Frequency (GHz)
Electrical Specifications at Ta = 25o C
lobmyS snoitidnoCtseT:sretemaraP stinU .niM .pyT .xaM
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S|12|
G
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V
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V
dgb
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
niaGrewoPnoitresnI
Z,Am052=qdI,V0.8=sdV
SZ=L
niaGelbaliavAmumixaM
Z,Am052=qdI,V0.8=sdV
SZ=TPOSZ,LZ=TPOL
tnerruCniarDdetarutaS
V0=sgV,V0.3=sdV
:ecnatcudnocnarT
V0=sgV,V0.3=sdV
:egatloVffO-hcniP
Am2.1=dI,V0.2=sdV
smhO05=
tnioPtpecretnIredrOdrihTtuptuO
)tuptuorewopmumixamrofdenutsieciveD(
Am4.2=sgI,egatloVnwodkaerBecruoS-ot-etaG V22-71-
Am4.2=dgI,egatloVnwodkaerBniarD-ot-etaG V22-71-
1
zHG9.0=f
zHG9.1=f
zHG9.0=f
zHG9.1=f
zHG9.0=f
zHG9.1=f
Bd
Bd
mBd
mBd
Am056
Sm573
V7.2-9.1-0.1-
o
W/C73
http://www.stanfordmicro.com
7.71
5.21
32
02
64
64
EDS-101241 Rev A
Page 2
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters
may cause permanent damage.
Plot of ID vs. VDS for VGS= -2.2V to 0V
0.7
Preliminary
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
retemaraPlobmyS
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
erutarepmeTgnitarepOT
rewoPtupnIFRP
erutarepmeTlennahCT
erutarepmeTegarotST
SD
SG
PO
NI
HC
GTS
etulosbA
mumixaM
V21+
V0otV5-
Wm002
C°571+
C°571+ot56-
C°58+otC54-
0.6
0.5
VGS = 0 V
V
= - 0.2 V
GS
V
= - 0.4
GS
VGS = - 0.6 V
0.4
V
= - 0.8 V
GS
0.3
(amps)
D
I
0.2
0.1
0
= - 1.0 V
V
GS
V
= - 1.2 V
GS
V
= -1.4 V
GS
= -1.6 V
V
GS
V
= -1.8
GS
VGS = -2.0 V
V
= -2.2 V
V
GS
012345678
VDS (Volts)
NOTE: I/V curves were taken using pulse sampling techniques. This
results in low duty cycle currents through the device and therefore very
low power levels. It is not recommended that these measurements be
taken in d.c. mode, as excessive current could result in damage to the
device.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101241 Rev A
Page 3
Preliminary
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
25
20
15
(dB)
21
10
S
5
0
012345
|S21| & |S12| vs. Frequency
S
12
S
21
-25
-28
-31
-34
-37
-40
S
12
(dB)
dB
GHz
Frequency (GHz)
S11 & S22 vs. Frequency (.05 to 4.5 GHz)
Typical s-parameters at 25
S|11| S11gnA S12Bd S|12| S12gnA S21Bd S|21| S21gnA S|22| S22gnA
zHGqerF
50.089.09.72-2.324.415.2615.63-20.04.2702.06.74-
1.089.09.33-9.220.415.8516.53-20.00.9602.03.25-
3.059.00.85-8.123.218.2416.23-20.00.5532.03.17-
5.019.02.28-5.026.011.7214.03-30.00.1452.02.09-
7.088.02.401-1.910.96.2110.92-40.04.8272.05.801-
9.068.05.121-7.717.76.0012.82-40.04.8182.05.121-
1.158.04.531-5.617.63.098.72-40.02.0103.05.131-
3.158.09.641-3.518.53.186.72-40.00.313.06.931-
5.148.08.651-3.412.59.275.72-40.02.3-23.08.641-
7.148.04.561-3.316.42.565.72-40.08.8-33.02.351-
9.148.01.371-5.212.49.755.72-40.01.41-43.07.951-
1.248.09.9716.118.38.056.72-40.07.81-53.06.561-
3.248.08.3718.015.32.448.72-40.02.32-63.07.171-
5.248.06.7618.91.38.732.82-40.02.72-04.02.671-
0.358.03.4512.86.29.227.82-40.08.53-34.06.471
5.318.05.4413.61.23.97.92-30.07.34-05.02.461
0.477.06.4310.46.13.4-9.03-30.05.15-65.09.351
5.437.08.4219.01.19.71-2.23-20.04.95-26.05.341
°°
°
C (Vds = 8V, Idq = 250mA)
°°
No external matching, scattering parameters de-embedded on test fixture to device lead at
package edge.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101241 Rev A
Page 4
Preliminary
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
900 MHz Application Circuit at 25
ς
P
vs. Pin T=25
out
°°
°C Drain Efficiency & I
°°
40
°°
°
C (Vds=8V, Idq=250mA)
°°
.gised.feReulaVelytS/rebmuNtraP
7,1dCFp022seires81HCMMHOR
21,8,6,2dCFp81seires81HCMMHOR
01,3dCFp0001seires81HCMMHOR
9,4dCFp001seires81HCMMHOR
11,5dCFu1.0tlov53,"A"ezis,MULATNAT
1MCFp3.3seires81HCMMHOR
2MCFp9.3seires81HCMMHOR
1MLHn6.5K6N5HF-8061LLOKOT
2MLHn7.4K7N4HF-8061LLOKOT
1saibLHn93TN93HF-8061LLOKOT
2saibLHn28TN28HF-8061LLOKOT
2,1batsRsmho023060ezis
P
(dBm) IP3(dBm) Output tone Level (dBm)
1dB
30.5 46.0 15
Ω
60
Microstrip Segment Specifications
.gised.feReulaV
1ZzHM009@.ged0.6,smho05
2ZzHM009@.ged7.2,smho05
3ZzHM009@.ged5.8,smho05
4ZzHM009@.ged8.3,smho05
5ZzHM009@.ged4.3,smho05
6ZzHM009@.ged2.2,smho05
7ZzHM009@.ged0.6,smho05
8ZzHM009@.ged7.2,smho05
hase shift functional block between compo-
P
nents are calculated based on wavelength of 900
MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height
dimensions of W=.054 inch and h= .031 inch.
Test Data @ 0.9 GHz
vs. P
D
T=25
out
°°
°C
°°
510
40
20
Efficiency (%)
0
(dBm)
out
P
30
20
10
0 5 10 15 20
Pin (dBm)
S11 & S22 vs. Frequency T=25
0
(dB)
22
, S
11
S
-5
-10
-15
-20
-25
S
S
22
11
-30
0.7 0.8 0.9 1.0 1.1
Frequency GHz
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
°°
°CS
°°
18
15
12
(dB)
21
S
9
6
4
Drain Efficiency
I
D
15 20 25 30 35
P
(dBm)
out
& S12vs. Frequency T=25
21
S
21
S
12
°°
°C
°°
0.7 0.8 0.9 1.0 1.1
Frequency GHz
http://www.stanfordmicro.com
EDS-101241 Rev A
430
350
270
-26
-29
-32
-35
-38
(mA)
D
I
(dB)
12
S
Page 5
0
0
0430
0
1.9 GHz Application Circuit at 25
ς
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
°°
°
C (Vds=8V, Idq=250mA)
°°
.gised.feReulaVelytS/rebmuNtraP
1dCFp022seires81HCMMHOR
8,7,6,3,2dCFp33seires81HCMMHOR
9dCFp0001seires81HCMMHOR
4dCFp001seires81HCMMHOR
01dCFu1.0tlov53,"A"ezis,MULATNAT
5dCFu01tlov53,"A"ezis,MULATNAT
1MCFp7.2seires81HCMMHOR
2MCFp2.2seires81HCMMHOR
1saibLHn01TN01HF-8061LLOKOT
2saibLHn22TN22HF-8061LLOKOT
1batsRsmho1.53060ezis
2batsRsmho023060ezis
P
(dBm) IP3(dBm) Output tone Level (dBm)
1dB
30.5 46.0 15
Ω
Preliminary
Microstrip Segment Specifications
.gised.feReulaV
1ZzHM0091@.ged5.5,smho05
2ZzHM0091@.ged9.71,smho05
3ZzHM0091@.ged5.5,smho05
4ZzHM0091@.ged72,smho05
5ZzHM0091@.ged8.5,smho05
hase shift functional block between components
P
are calculated based on wavelength of 1900 MHz
signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch.
Test Data @ 1.9 GHz
Preliminary
P
vs. Pin T=25οC
40
30
(dBm)S
20
out
P
10
out
60
40
20
Efficiency (%)
0
0 5 10 15 2
Pin (dBm)
(dB)
22
, S
11
S11 & S22 vs. Frequency T=25oC
0
-5
-10
-15
S
11
-20
-25
-30
1.5 1.7 1.9 2.1 2.3
Frequency GHz Frequency GHz
S
22
18
15
12
(dB)
21
S
9
6
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
5
Drain Efficiency & IDvs. P
Drain Efficiency
T=25οC
out
I
D
15 20 25 30 35
Pout(dBm)
S
& S12 vs. Frequency T=25oC
21
S
21
S
12
1.5 1.7 1.9 2.1 2.3
http://www.stanfordmicro.com
EDS-101241 Rev A
51
35
27
-26
-29
-32
-35
-38
(mA)S
D
I
(dB)
12
Page 6
2.45 GHz Application Circuit at 25
ς
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
°°
°
C (Vds=8V, Idq=250mA)
°°
.gised.feReulaVelytS/rebmuNtraP
5,2dCFp6.5seires81HCMMHOR
8,7,6,3,1dCFp22seires81HCMMHOR
9dCFp0001seires81HCMMHOR
4dCFp001seires81HCMMHOR
01dCFu1.0tlov53,"A"ezis,MULATNAT
1MCFp5.1seires81HCMMHOR
2MCFp2.1seires81HCMMHOR
1saibLHn51TN51HF-8061LLOKOT
2saibLHn51TN51HF-8061LLOKOT
1batsRsmho1.53060ezis
2batsRsmho013060ezis
P1dB(dBm) IP3(dBm) Output tone Level (dBm)
31.0 44.5 15
Ω
Preliminary
Preliminary
Microstrip Segment Specifications
.gised.feReulaV
1ZzHM0542@.ged3.7,smho05
2ZzHM0542@.ged7.21,smho05
3ZzHM0542@.ged3.01,smho05
4ZzHM0542@.ged3.01,smho05
5ZzHM0542@.ged8.51,smho05
6ZzHM0542@.ged9.81,smho05
7ZzHM0542@.ged1.7,smho05
hase shift functional block between components are
P
calculated based on wavelength of 2450 MHz signal
on FR4 board material with dielectric constant of 4.1,
microstrip width and height dimensions of W=.054
inch and h= .031 inch.
Test Data @ 2.45 GHz
P
vs. Pin T=25oC
40
out
30
(dBm)S
20
out
P
10
60
40
20
Efficiency (%)
0
0 5 10 15 20 25
Pin (dBm)
S11 & S22 vs. Frequency T=25oC
0
(dB)
22
, S
11
-5
-10
-15
-20
-25
S
22
S
11
-30
1.95 2.2 2.45 2.7 2.95
18
15
12
(dB)
21
9
S
6
1.95 2.2 2.45 2.7 2.95
Frequency GHz Frequency GHz
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
6
Drain Efficiency & ID vs. P
Drain Efficiency
T=25oC
out
I
D
10 15 20 25 30 35
Pout (dBm)
S11 & S22 vs. Frequency T=25oC
S
12
S
21
http://www.stanfordmicro.com
EDS-101241 Rev A
510
430
350
270
-26
-29
-32
-35
-38
(mA)
D
(dB) I
12
S
Page 7
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Preliminary
Preliminary
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
Part Number Ordering Information
rebmuNtraP
9820-FHS0001"7
rePseciveD
leeR
eziSleeR
Mounting and Thermal Considerations:
It is very important that adequate heat sinking be provided
to avoid exceeding the maximum device junction
temperature. All of the following suggestions should be
followed to ensure maximum operating life of the device:
1. Use 2 ounce copper if possible.
2. Use a large ground pad area with many plated through-
holes (solder filling is recommended).
3. Multiple filled vias are required directly below the SOT-
89 ground tab.
4. Solder the copper pad on the backside of the device
package to the ground plane.
5. Use three point board seating with 2-56 machine
screws (no more than 0.2 inch from the device) to provide
a low thermal resistance path to the plate. The thermal
resistance from ground lead to screws is 2 deg. C/W
6. We recommend thermal transfer paste be used
between the board and the mounting plate.
Part Symbolization
The part will be symbolized with a “H2” designator on
the top surface of the package.
niP
noitangiseD
1etaG
2ecruoS
3niarD
4ecruoS
Outline Drawing
1
H2
2
3
4
H2
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
7
http://www.stanfordmicro.com
EDS-101241 Rev A
Page 8
For 89 Outline
SHF-0289 DC-3GHz, 1 Watt GaAs HFET
Component Tape and Reel Packaging
Tape Dimensions
Preliminary
Preliminary
noitpircseDlobmyS
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Note: Drawing not to scale
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
8
P
D
D
P
W
P
eziS
)mm( leel
A
B
K
1
1
0
0
E
C
t
10.0-/+19.4
10.0-/+25.4
10.0-/+09.1
10.0-/+00.8
01.0-/+06.1
50.0-/+55.1
10.0-/+00.4
10.0-/+57.1
52.0-/+01.9
10.0-/+50.0
30.0-/+0.21
T
F
2
http://www.stanfordmicro.com
EDS-101241 Rev A
50.0-/+03.0
01.0-/+05.5
01.0-/+00.2
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