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Product Description
Stanford Microdevices’ SHF-0198 series is a high performance AlGaAs/GaAs Heterostructure FET housed in a
low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky
leakage current for higher power-added efficiency and
improved linearity.
Output power at 1dB compression for the SHF-0198 is
+27dBm when biased for Class A operation at 9V and
150mA. This HFET is also characterized at 5V for lower
voltage applications.
SHF-0198
DC-12 GHz, 0.5 Watt
AIGaAs/GaAs HFET
This device can be used in both analog and digital wireless
communication infrastructure and subscriber equipment
including cellular, PCS, CDPD, wireless data and pagers.
Product Features
• Patented AIGaAs/GaAs Heterostructure FET
Technology
• +27dBm Output Power at 1dB Compression
Output Power vs. Frequency
30
28
dBm
26
24
DC24681012
GHz
• +38 dBm Output IP3
• High Power Added Efficiency - up to 40% at
Class A
• 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz
Applications
• AMPS, PCS Basestations
• VSA T
Electrical Specifications at Ta = 25C
Sym bol P ar am e ters : Te st Cond itions Units Min. Typ . M ax.
Gp Power Gain f = 0.9 GHz
P1dB O utput Poser at 1dB Com pression f = 0.9 G Hz
IP3 O utput Third O rder Intercept Point f = 0.9 GHz
NFopt Noise Figure f = 0.9 G Hz
Id s s
G m Transconductance: Vds = 3V, V gs = 0V m S 175
Vp Pinch-off Voltage: Vds = 3V, Ids = 1mA V -2.2
Vbgs G ate-to-Source B reakdown Voltage V -20 -12
Vbgd Gate-to-Drain Breakdown Voltage V -20 -12
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Saturated Drain C urrent: V ds = 3V,
Vgs = 0V
f = 1.9 G Hz
f = 2.5 G Hz
f = 1.9 G Hz
f = 2.5 G Hz
f = 1.9 G Hz
f = 2.5 G Hz
f = 1.9 G Hz
f = 2.5 G Hz
3-21
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
m A 300
15
12
+26.5
+26.3
17
14
12
+27.5
+27.3
+27.0
+38
+38
+37
1.8
2.2
2.5
High Power GaAs FETs
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SHF-0198 DC-12 GHz 0.5 Watt HFET
Typical Performance at 25
°°
°
C (Vds = 9V , Ids = 150mA)
°°
0
-5
-10
dB
-15
-20
DC24681012
GHz
|S12| vs. Frequency
0
|S11| vs. Frequency
-20
High Power GaAs FETs
dB
-40
-60
DC24681012
GHz
dB
|S21| and MAG vs. Frequency
30
25
20
15
dB
10
5
0
DC 2 4 6 8 10 12
MAG
S21
GHz
|S22| vs. Frequency
0
-5
-10
-15
-20
024681012
GHz
TOIP vs. Frequency
39
38
37
dBm
36
35
34
024681012
GHz
Typical S-Parameters Vds = 9.0V, Id = 150mA
Freq GHz |S 11 | S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
.100
.500
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11 .00
12.00
0.891 -12 11.82 177 .005 89 .539 -4
0.928 -64 10.84 150 .023 70 .5 29 -27
0.888 -97 9.44 122 .037 63 .477 -48
0.804 -138 7.94 97 .043 47 .468 -74
0.813 -167 5.69 70 .049 44 .493 -103
0.804 172 3.98 52 .053 60 .531 -123
0.846 155 2.76 35 .074 65 .603 -145
0.914 137 2.02 20 .092 69 .670 -159
0.917 119 1.66 -1 .137 58 .822 147
0.926 101 1.45 -4 .115 60 .802 148
0.967 87 1.37 -11 .205 56 .942 132
0.970 65 1.33 -34 .167 41 .947 100
0.937 54 1.38 -31 .186 42 .952 89
0.906 21 1.33 -38 .207 39 .879 51
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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SHF-0198 DC-12 GHz 0.5 Watt HFET
Absolute Maximum Ratings
Parameter Symbol
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
RF Input Power P
Channel Temperature T
Storage Temperature T
Thermal Resistance, Junction-
Ground Lead
Notes:
1. Operation of this device above any one of these parameters
may cause permanent damage.
R
2. Mounting Surface T emperature = 25° C
Absolute
Maximum
DS
GS
DS
STG
CH
IN
IN
100 mW
-65 to +175 C
36 degC/W
Outline Drawing
+10V
-5V
IDSS
175 C
Part Number Ordering Information
Part Number Devices Per Tray
SHF-0198 100
High Power GaAs FETs
Pin Designation
1Gate
2Source
3Drain
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3-23
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