Datasheet SHF-0189 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SHF-0189 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.

Output power at 1dB compression for the SHF-0189 is +27
dBm when biased for Class AB operation at 8V and 100mA.
The +39 dBm third order intercept makes it ideal for high dy­namic range, high intercept point requirements. They are well
suited for use in both analog and digital wireless communica­tion infrastructure and subscriber equipment including cellular
PCS, CDPD, wireless data, and pagers.

Adequate heat sinking must be provided for this part to avoid
exceeding the maximum junction temperature. Refer to “Mount­ing and Thermal Considerations” section on page 7 for more
information.

Maximum Available Gain vs. Frequency
Vds = 8.0 volts, Idq = 100 mA

30
25
20
15

(dB)

Max

10

G

5
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Electrical Specifications at Ta = 25

Frequency (GHz)

°°

°C

°°

Preliminary

Preliminary

SHF-0189

DC-3 GHz, 0.5 Watt
GaAs HFET

Product Features

• Patented GaAs Heterostructure FET

Technology

• +27 dBm Output Power at 1dB Compression

• +39 dBm Output IP3

• High Drain Efficiency: Up to 46% at Class AB

• 15 dB Gain at 900 MHz (Application circuit)

• 17 dB Gain at 1900 MHz (Application circuit)

Applications

• Analog and Digital Wireless System

• Cellular PCS, CDPD, Wireless Data, Pagers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

niaGrewoPnoitresnI

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SZ=L

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V0=sgV,V0.3=sdV

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V0=sgV,V0.3=sdV

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Am2.1=dgI,egatloVnwodkaerBniarD-ot-etaG V02-71-

zHG9.0=f
zHG9.1=f

zHG9.0=f
zHG9.1=f

zHG9.0=f
zHG9.1=f

Bd

Bd

mBd
mBd

Am003

Sm571

V7.2-9.1-0.1-

o

W/C66

http://www.stanfordmicro.com

1

4.71

4.41

1.32

0.02

93

2.04

EDS-101240 Rev A

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

Absolute Maximum Ratings

Preliminary

Preliminary

Notes:

1. Operation of this device above any one of these parameters
may cause permanent damage.

Plot of ID vs. VDS for VGS= -2.2V to 0V

0.35

0.30

0.25

0.20

0.15

(amps)

D

I

0.10

0.05

0.00
012345678

V

V

V

V

V

V

V

V

V

V

GS

GS

GS

GS

GS

GS

GS

GS

GS

GS

=0v

= -0.2v

= -0.4v

= -0.6v

= -0.8v

= -1.0v

= -1.2v

= -1.4v

= -1.6v

= -1.8v

V

GS

retemaraPlobmyS

egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
erutarepmeTgnitarepOT

rewoPtupnIFRP

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= -2.0v

SD

SG

PO

NI

HC

GTS

etulosbA
mumixaM

V21+

V0otV5-

Wm002

C°571+

C°58+otC54-

C°571+ot56-

VDS (V olts)

NOTE: I/V curves were taken using pulse sampling techniques. This
results in low duty cycle currents through the device and therefore
very low power levels. It is not recommended that these measurements
be taken in d.c. mode, as excessive current could result in damage to
the device.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

2

http://www.stanfordmicro.com

EDS-101240 Rev A

Preliminary

Preliminary

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

25

20

15

(dB)

21

10

S

5

0

012345

|S21| & |S12| vs. Frequency

S

12

S

21

-25

-28

-31

-34

-37

-40

S

12

(dB)

Frequency (GHz)

S11 & S22 vs. Frequency ( .05 to 4.5 GHz)

Typical s-parameters at 25

zHGqerF S|11| S11gnA S12Bd S|12| S12gnA S21Bd S|21| S21gnA S|22| S22gnA

50.089.06.51-5.026.017.8619.63-10.02.2744.02.51-

1.079.03.91-4.024.018.5611.63-20.02.0744.07.71-

3.079.08.33-7.917.95.4516.33-20.08.1624.01.82-

5.039.04.84-0.919.82.3417.13-30.04.3504.04.83-

7.009.09.26-2.811.89.1311.03-30.01.5473.07.84-

9.068.07.77-4.715.77.0218.82-40.00.6353.03.95-

1.138.08.19-8.619.62.0117.72-40.00.7243.08.96-

3.108.00.501-2.614.65.0010.72-40.07.8123.04.97-

5.177.06.711-5.510.63.194.62-50.09.0113.06.88-

7.167.07.921-0.516.56.280.62-50.05.303.04.79-

9.147.06.141-4.412.52.477.52-50.06.3-92.04.601-

1.237.04.351-8.319.48.564.52-50.05.01-82.09.411-

3.237.00.561-3.316.46.753.52-50.01.71-72.02.321-

5.237.01.471-5.212.48.944.52-50.05.32-72.01.631-

0.347.03.4613.117.31.234.52-50.04.73-72.02.351-

5.357.09.4412.012.34.514.52-50.03.05-72.09.661-

0.477.00.7213.99.20.1-5.52-50.00.36-62.04.871

5.468.01.9013.99.20.12-3.52-50.03.67-62.05.661

°°

C (V

°

°°

= 8V , Idq = 100mA)

ds

No external matching, scattering parameters de-embedded on test fixture to device lead at
package edge.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

3

http://www.stanfordmicro.com

EDS-101240 Rev A

900 MHz Application Circuit at 25

Ω

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

°°

°

C (Vds=8V , Idq=100mA)

°°

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8,1dCFp81seires81HCMMHOR

2dCFp6.5seires81HCMMHOR

9,7,3dCFp86seires81HCMMHOR

01,4dCFp0001seires81HCMMHOR

6,5dCFu1.0tlov53,"A"ezis,MULATNAT

1MCFp2.2seires81HCMMHOR

1MLHn8.6K8N6HF-8061LLOKOT

1saibLHn8.6K8N6HF-8061LLOKOT
2saibLHn28TN28HF-8061LLOKOT

2,1batsRsmho023060ezis

P

1dB

27.0 39.0 11

Ω

Microstrip Segment Specifications

Preliminary

Preliminary

Microstrip Segment Specifications

.gised.feReulaV
1ZzHM009@.ged4.2,smho05
2ZzHM009@.ged4.8,smho05
3ZzHM009@.ged0.4,smho05
4ZzHM009@.ged0.4,smho05
5ZzHM009@.ged0.8,smho05
6ZzHM009@.ged4.2,smho05

hase shift functional block between components

P

are calculated based on wavelength of 900 MHz
signal on FR4 board material with dielectric con­stant of 4.1, microstrip width and height dimen­sions of W=.054 inch and h= .031 inch.

Test Data @ 0.9 GHz

(dBm) IP3(dBm) Output tone Level (dBm)

P

vs. Pin T=25°C

30
25
20

(dBm)

out

15

P

10

out

80
60
40
20

Efficiency (%)

0

0481216

Pin (dBm)

S11 & S22 vs. Frequency T=25

0

(dB)

22

, S

11

S

-5

-10

-15

-20

S

22

S

11

-25

0.7 0.8 0.9 1 1.1

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

Frequency GHz

Note: s-parameters determined using applications circuit shown above

°°

°C

°°

4

20
15
10

(dB)

21

S

5
0

Drain Efficiency & ID vs. P

T=25°C

out

I

D

Drain E fficiency

15 18 21 24 27 30

P

(dBm)

out

S21& S12vs. Frequency T=25

S

21

S

12

°°

°C

°°

0.7 0.8 0.9 1 1.1

Frequency GHz

http://www.stanfordmicro.com

EDS-101240 Rev A

160
140
120
100
80

-30

-35

-40

(mA)

D

I

(dB)

12

S

1900 MHz Application Circuit at 25

8

Ω

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

°°

°

C (Vds=8V , Idq=100mA)

°°

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21,6,3,2dCFp33seires81HCMMHOR

7,4dCFp2.8seires81HCMMHOR

01,5dCFu1.0tlov53,"A"ezis,MULATNAT

11,8dCFp001seires81HCMMHOR
1MCFp7.2seires81HCMMHOR
2MCFp0.1seires81HCMMHOR
1MLHn2.2K2N2HF-8061LLOKOT

1saibLHn01TN01HF-8061LLOKOT
2saibLHn22TN22HF-8061LLOKOT

1batsRsmho1.53060ezis

2batsRsmho013060ezis

P

1dB

27.0 40.2 11

Preliminary

Preliminary

Microstrip Segment Specifications

.gised.feReulaV
1ZzHM0091@.ged0.5,smho05
2ZzHM0091@.ged4.8,smho05
3ZzHM0091@.ged8.3,smho05
4ZzHM0091@.ged8.3,smho05
5ZzHM0091@.ged6.8,smho05

hase shift functional block between components

P

are calculated based on wavelength of 1900 MHz
signal on FR4 board material with dielectric con­stant of 4.1, microstrip width and height dimen­sions of W=.054 inch and h= .031 inch.

Test Data @ 1.9 GHz

(dBm) IP3(dBm) Output tone Level (dBm)

°°

°C

°°

80
60
40
20

Efficiency (%)

0

30
25
20

(dBm)

15

out

P

10

P

vs. Pin T=25

out

0481216

Pin (dBm)

°°

°C

°°

(dB)

21

S

0
5
0
5
0

(dB)

22

, S

11

S

-5

-10

-15

-20

-25

S11 & S22 vs. Frequency T=25

0

S

22

S

11

1.5 1.7 1.9 2.1 2.3

Frequency (GHz)

Note: s-parameters determined using applications circuit shown above

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

5

Drain Efficiency & I

I

D

Drain Efficiency

vs. P

D

out

T=25

°°

°C

°°

15 18 21 24 27 30

Pout (dBm)

S21 & S12 vs. Frequency T=25

S

21

°°

°C

°°

S

12

1.5 1.7 1.9 2.1 2.3

Frequency (GHz)

http://www.stanfordmicro.com

EDS-101240 Rev A

160
140
120
100
80

-22

-27

-32

(mA)

D

I

(dB)

12

S

2450 MHz Application Circuit at 25

8

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

°°

°

C (Vds=8V , Idq=100mA)

°°

.gised.feReulaVelytS/rebmuNtraP

8,7,6,4,1dCFp22seires81HCMMHOR
5,2dCFp6.5seires81HCMMHOR
9,3dCFp0001seires81HCMMHOR

11,01dCFu1.0tlov53,"A"ezis,MULATNAT
1MCFp8.1seires81HCMMHOR
2MCFp0.1seires81HCMMHOR

1MLHn2.2K2N2HF-8061LLOKOT

1saibLHn8.6K8N6HF-8061LLOKOT
2saibLHn51TN51HF-8061LLOKOT
1batsRsmho1.53060ezis
2batsRsmho023060ezis

P

1dB

27.0 40.2 11

Ω

Preliminary

Preliminary

Microstrip Segment Specifications

.giseD.feReulaV
1ZzHM0542@.ged4.7,smho05
2ZzHM0542@.ged8.9,smho05
3ZzHM0542@.ged5.31,smho05
4ZzHM0542@.ged3.01,smho05
5ZzHM0542@.ged1.01,smho05
6ZzhM0542@.ged6.01,smho05
7ZzhM0542@.ged7.21,smho05
8ZzhM0542@.ged4.7,smho05

hase shift functional block between components

P

are calculated based on wavelength of 2450 MHz
signal on FR4 board material with dielectric con­stant of 4.1, microstrip width and height dimen­sions of W=.054 inch and h= .031 inch.

Test Data @ 2.45 GHz

(dBm) IP3(dBm) Output tone Level (dBm)

°°

°C

°°

80
60
40

Efficiency (%)

20

0

(dBm)

out

P

30
25
20
15
10

P

vs. Pin T=25

out

0 4 8 12 16

Pin (dBm)

S11 & S22 vs. Frequency T=25

0

-10

(dB)

-20

22

, S
S

11

-30

S

11

-40

2.05 2.25 2.45 2.65 2.85

Frequency (GHz) Frequency (GHz)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

Note: s-parameters determined using applications circuit shown above

°°

°CS

°°

0

(dB)

21

S

5
0
5

S

22

0

2.05 2.25 2.45 2.65 2.85

6

Drain Efficiency & ID vs. P

I

D

Drain Efficiency

out

T=25

°°

°C

°°

15 18 21 24 27 30

Pout (dBm)

& S12 vs. Frequency T=25

21

S

21

http://www.stanfordmicro.com

°°

°C

°°

S

12

EDS-101240 Rev A

160
140
120
100
80

-2 2

-2 7

-3 2

(mA)

D

I

(dB)

12

S

Preliminary

Preliminary

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

Mounting and Thermal Considerations:

It is important that adequate heat sinking be provided to avoid
exceeding the maximum device junction temperature. The
following suggestions should be followed to ensure maximum
operating life of the device:

1. Use 2 ounce copper if possible.

2. Use a large ground pad area with many plated through­holes.

3. Multiple vias are required directly below the SOT-89 ground
tab.

4. Solder the copper pad on the backside of the device
package to the ground plane.

5. Use three point board seating with 2-56 machine screws
(no more than 0.2 inch from the device) to provide a low
thermal resistance path to the plate. The thermal resistance
from ground lead to screws is 2 °C/W.

6. We recommend thermal transfer paste be used between
the board and the mounting plate.

Part Number Ordering Information

rebmuNtraP

9810-FHS0001"7

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Part Symbolization

The part will be symbolized with a “H1” designator
on the top surface of the package.

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noitangiseD

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2ecruoS
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4ecruoS

Outline Drawing

1

SHF-0189

H1

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

7

H1

2

3

4

http://www.stanfordmicro.com

EDS-101240 Rev A

For 89 Outline

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

Component T ape and Reel Packaging

T ape Dimensions

Preliminary

Preliminary

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Note: Drawing not to scale

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

8

P
D

D
P

W

P

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)mm( leel

A
B
K

1
1

0
0

E

C

t

10.0-/+19.4

10.0-/+25.4

10.0-/+09.1

10.0-/+00.8

01.0-/+06.1

50.0-/+55.1

10.0-/+00.4

10.0-/+57.1

52.0-/+01.9

10.0-/+50.0

30.0-/+0.21

T

F

2

http://www.stanfordmicro.com

EDS-101240 Rev A

50.0-/+03.0

01.0-/+05.5

01.0-/+00.2