Datasheet SHF-0186K Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SHF-0186K is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.

Output power at 1dB compression for the SHF-0186K is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.

Gain vs. Frequency

40
30
20

(dB)

Max

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0

-1 0
024681012

Frequency (GHz)

VDS=8V , IDQ=100mA

Gmax

S21

Preliminary

Preliminary

SHF-0186K

DC-3 GHz, 0.5 Watt
AlGaAs/GaAs HFET

Product Features

• Patented AlGaAs/GaAs Heterostructure FET

Technology

• +28 dBm P1dB T ypical

• +40 dBm Output IP3 Typical

• High Drain Efficiency: Up to 46% at Class AB

• 17 dB Gain at 900 MHz (Application circuit)

• 15 dB Gain at 1900 MHz (Application circuit)

Applications

• Analog and Digital Wireless System

• Cellular PCS, CDPD, Wireless Data, Pagers

• AN-020 Contains detailed application circuits

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com

1

EDS-101577 Rev A

Preliminary

SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET

Absolute Maximum Ratings

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: IDSVDS (max) < (TJ - TL)/R

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Typical Performance - Engineering Application Circuits (See AN-020)

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054280015.825.930.417.41-82.5-9.206.

* 15dBm per tone

Data above represents typical performance of the application circuits noted in Application Note AN-020.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.stanfordmicro.com or call your local sales representative.

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EDS-101577 Rev A

SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET

De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDQ=100mA, 25° C)

Preliminary

40

Insertion Gain & Isolation Insertion Gain vs T emperature

30
20
10

Gain (dB)

S21

S12

Gmax

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024681012

Frequency (GHz)

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Isolation (dB)

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Gain (dB)

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0.0 0.2 0.5 1.0 2.0

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Frequency (GHz)

S22 vs Frequency

1.0

0.5

10 GHz

6 GHz

3 GHz

2 GHz

T = -40, 25, 85°C

2.0

13 GHz

5.0

1 GHz

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inf

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2.0

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DC-IV Curves (VGS = -2 to 0V , 0.2V steps)

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300
250
200

(mA)

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Note: S-parameters are de-embedded to the device leads. The data represents typical performace of the device. Measured s-parameter
data files can be downloaded using a link found on the SHF-0186K device page from our web site at www.stanfordmicro.com.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

3

VGS = 0V

VGS = -2V

EDS-101577 Rev A

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

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SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET

Package Dimensions

H1

Preliminary

Part Number Ordering Information

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The part will be symbolized with an “H1” designator
on the top surface of the package.

Part Symbolization

522 Almanor Ave., Sunnyvale, CA 94085

PCB Pad Layout

H1

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

EDS-101577 Rev A