Datasheet SH8J66 Datasheet (ROHM)

4V Drive Pch+Pch MOSFET

SH8J66

Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Applications Switching

Packaging specifications Inner circuit

Type

SH8J66

Package Code Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C) <It is the same ratings for Tr1 and Tr2.>

Parameter Drain-source voltage Gate-source voltage

Drain current Source current

(Body diode) Total power dissipation Channel temperature

Range of Storage temperature

∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Continuous Pulsed Continuous Pulsed

Symbol

DSS GSS

D

DP

S

SP

P

D

Limits Unit

−30 ±20

±9

∗1

±36

−1.6

∗1

−36

∗2

2.0

VV VV AI AI AI AI

W / TOTAL

W / ELEMENT1.4

°CTch 150 °CTstg −55 to +150

SOP8

(8) (7)

∗2

∗1

(1) (2)

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

(6) (5)

∗2

(3) (4)

Each lead has same dimensions

∗1

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain

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Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.>

Parameter Symbol Gate-source leakage Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

V

Static drain-source on-state resistance

R

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for Tr1 and Tr2.>

Parameter Symbol

∗ Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

gs

Q

gd

V

SD

∗

g

∗

Min.

Typ. Max.

−−±10 μAV

−30 −−VID= −1mA, VGS=0V

−−−1 μAVDS= −30V, VGS=0V

−1.0 −−2.5 V VDS= −10V, ID= −1mAGate threshold voltage

− 13.5 18.5 I

− 17.5 23.6 mΩ

− 19.0 24.7 I

11 −−SV

− 3000 − pF VDS= −10V

− 400

−

−−nC

− pF VGS=0V

400

− pF f=1MHz

− ns

20 60

− ns

170 100

− ns

35

− nC

9

− nC

12

Min. Typ. Max.

−−−1.2 V IS= −9A, VGS=0VForward voltage

Unit

=±20V, VDS=0V

GS

mΩ

= −9A, VGS= −10V

D

ID= −4.5A, VGS= −4.5V

= −4.5A, VGS= −4.0V

mΩ

D

= −10V, ID= −9A

DS

VDD −15V

ID= −4.5A

GS

= −10V

V

L

=3.3Ω

R

G

=10Ω

R V

−15V

DD

I

= −9A

D

V

= −5V

GS

=1.7Ω / RG=10Ω

R

L

Unit

Data Sheet SH8J66

Conditions

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Electrical characteristic curves

20

18

16

[A]

D

14

12

10

8

6

DRAIN CURRENT : -I

4

2

0

0.0 0.2 0.4 0.6 0.8 1.0

DRAIN -SOUR CE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fi g.1 Typic al output char acteri stic s() Fi g.2 T ypical output char acteri stic s() Fig.3 Typical Transfer Characteristics

VGS= -10V

= -4.5V

V

GS

= -4.0V

V

GS

VGS= -2.5V

VGS= -3.5V

= -3.0V

V

GS

Ta=25°C Pulsed

20

18

[A]

16

D

14

12

10

8

6

DRAIN CURRENT : -I

4

2

0

02 46 810

VGS= -10V

= -4.0V

V

GS

= -3.0V

V

GS

VGS= -2.5V

VGS= -2.2V

Ta= 25°C Pulsed

100

VDS= - 10V Pulsed

[A]

10

D

DRAIN CURRENT : -I

0.01

Ta= 125°C

Ta= 75°C

Ta= 25°C

1

Ta= - 25°C

0.1

1.01.52.02.53.0

GATE- SOURC E VOLTAGE : - VGS[V]

Data Sheet SH8J66

100

Ta= 25°C Pulsed

]

Ω

[m

DS(on)

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -I

Fi g.4 Stati c Dr ain-Sour ce On-Stat e

Res istance vs. Drai n Curr ent(I)

100

VGS= -4.0V Pulsed

]

Ω

[m

DS(on)

10

Ta= 125°C

Ta= 75°C Ta= 25°C

Ta= -25°C

RESIST ANCE : R

STATIC DRAIN- SOURCE ON -STATE

1

0.1 1 10

DRAIN-CURRENT : -I

Fi g.7 Stat ic Dr ain- Source On- State

Res istance vs. Drai n Curr ent(V)

VGS= -4.0V V V

GS

D

[A]

D

= -4.5V = -10V

[A]

100

VGS= - 10V Pulsed

]

Ω

[m

DS(on)

10

RESISTAN CE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]

Fi g.5 Stati c Dr ain- Source On- State

Res istance vs. Drai n Curr ent()

100

VDS= -10V Pulsed

10

|Yfs| [S]

1

FORWARD TRANSFER ADMITTANCE :

0

0.1110 DRAIN-CURRENT : -ID[A]

Fi g.8 For ward Tr ansfer Admi ttance

vs. Drain Current

Ta= 125°C Ta=75°C Ta=25°C Ta= -25°C

Ta= -25°C Ta=25°C Ta=75°C Ta=125°C

100

]

Ω

[m

DS(on)

10

RESISTAN CE : R

STAT IC DR AIN-SO URCE ON-ST ATE

1

100

10

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

VGS= -4.5V Pulsed

Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C

0.1 1 10

Fi g.6 Stati c Dr ain-Sour ce On-Stat e

Res istance vs. D rain C urrent (

VGS=0V Pulsed

Ta= 125°C

Ta= 75°C Ta= 25°C

Ta= -25°C

0.0 0.2 0.4 0. 6 0.8 1.0 1.2 SOUR CE-D RAIN VOLT AGE : -VSD [V]

Fi g.9 Rever se Drai n Curr ent

vs. Sour se-Dr ain Vol tage

)



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L

Data Sheet SH8J66

50

45

]

Ω

40

[m

35

DS(on)

30

25

20

RESISTAN CE : R

15

STATIC DRAIN-SOURCE ON-STATE

10

051015

GATE-SOU RCE VOLTAGE : - V

Fi g.10 Stat ic Dr ain- Source On- State

Resistance vs. Gate Source Voltage

10000

1000

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

ID= -9.0A

ID= -4.5A

Crss

Coss

Fi g.13 Typi cal Capac itance

vs. Dr ain-S ource Vol tage

Ciss

Ta= 25°C Pulsed

[V]

GS

Ta= 25°C f=1M Hz V

=0V

GS

[V]

DS

10000

1000

100

Switching Tim e : t [ns]

10

1

0.01 0.1 1 10

1000

100

(A)

D

10

1

0.1

DRAIN CURRENT : -I

0.01

t

r

DRAIN-CURRENT : -ID[A]

Fi g.11 Swi tching Char acteri sti cs

Operation in this area is l imited by R

(VGS=-10V)

Ta = 25°C

Single Pulse

MOUNT ED ON CE RAMIC B OARD

0.1 1 10 100

DRAIN -SOUR CE VOLTAGE : -VDS[V]

Fi g. 14 Maxi mum Safe O perat ing Aer a

Ta= 25°C V

t

d(off)

DD

V

GS

t

R

=10Ω

f

G

Pulsed

t

d(on)

DS(on)

= - 15V =- 10V

PW=100us

PW = 10m s

PW=1ms

DC operation

10

[V]

8

GS

6

4

2

GATE-SOU RCE VOLTAGE : - V

0

0 10203040506070

TOTAL GATE CHARGE : Qg [nC]

Fi g.12 D ynamic I nput Charac teri stics

Ta= 25°C V

DD

= -9.0A

I

D

R

=10Ω

G

Pulsed

= -15V

10

1

0.1

0.01

RESIST ANC E : r (t)

0.001

0.001 0. 01 0.1 1 10 100 1000

NORM ARI ZED TRAN SIEN T T HERM A

Ta = 25°C

Single Pu lse : 1Unit

Rth(ch-a)(t) = r(t)×Rth(ch-a)

Rth(ch-a) = 89.3 °C/W

PULSE WI DTH : Pw(s)

Fi g.15 N ormali zed Trans ient Ther mal Res istanc e vs. Pul se Width

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Fig.1-1 Switching Time Test Circuit

S

Fig.1-2 Switching Time Waveforms

%

V

Fig.2-1 Gate Charge Test Circuit

I

S

Fig.2-2 Gate Charge Waveform

V

Measurement circuits

R

G

Data Sheet SH8J66

Pulse Width

V

GS

I

D.U.T.

D

V

D

R

L

GS

10%

50% 50%

90%

10% 10

V

DD

DS

t

90% 90%

d(on)

t

r

t

on

t

d(off)

t

f

t

off

V

G

V

G(Const.)

GS

R

G

D

I

D.U.T.

V

D

R

L

GS

Q

V

DD

Q

g

gs

Q

gd

Charge

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