Datasheet SGW50N60HS Specification

SGW50N60HS

High Speed IGBT in NPT-technology

• 30% lower E

compared to previous generation

off

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability

- moderate E

increase with temperature

off

- very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1

for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type V

I

CE

C

E

off25

SGW50N60HS 600V 50A 0.88mJ

T

Marking Package

j

150°C

G50N60HS PG-TO-247-3

Maximum Ratings

G

PG-TO-247-3

C

E

Parameter Symbol Value Unit

Collector-emitter voltage VCE 600 V

DC collector current

= 25°C

T

C

= 100°C

T

C

Pulsed collector current, tp limited by T

I

jmax

Turn off safe operating area

≤ 600V, Tj ≤ 150°C

V

CE

Avalanche energy single pulse

I

= 50A, VCC=50V, RGE=25Ω

C

start T

=25°C

J

Gate-emitter voltage static
transient (t

Short circuit withstand time2)

VGE = 15V, V

≤ 600V, Tj ≤ 150°C

CC

<1µs, D<0.05)

p

Power dissipation

= 25°C

T

C

Operating junction and storage temperature

Time limited operating junction temperature for t < 150h T

I

C

100

50

150

Cpuls

-

E

AS

V

GE

150

280 mJ

±20
±30

t

10

SC

P

416 W

tot

T

,

j

T

stg

175

j(tl)

-55...+150

A

V

µs

°C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1

J-STD-020 and JESD-022

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1 Rev. 2.3 Nov 09

SGW50N60HS

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,
junction – ambient

Electrical Characteristic, at T

= 25 °C, unless otherwise specified

j

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage V

Collector-emitter saturation voltage V

Gate-emitter threshold voltage V

Zero gate voltage collector current I

Gate-emitter leakage current I

Transconductance gfs VCE=20V, IC=50A - 31 - S

Dynamic Characteristic

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Gate charge Q

Internal emitter inductance

measured 5mm (0.197 in.) from case

Short circuit collector current1) I

R

0.3 K/W

thJC

40

R

thJA

Value

min. Typ. max.

(BR)CES

CE(sat)

GE(th)

CES

GES

iss

oss

rss

Gate

VGE=0V, IC=500µA

VGE = 15V, IC=50A

=25°C

T

j

=150°C

T

j

IC=1mA,VCE=VGE 3 4 5

VCE=600V,VGE=0V

=25°C

T

j

=150°C

T

j

VCE=0V,VGE=20V - - 100 nA

-

-

=25V,

V

CE

=0V,

V

GE

f=1MHz

VCC=480V, IC=50A

V

=15V

GE

600 - -

-

-

-

-

2.8

3.15

-

-

3.15

3000

2572

245

-

158

- 179 - nC

-

40

-

-

-

Unit

V

µA

pF

LE - 13 - nH

C(SC)

V

=15V,tSC≤10µs

GE

V

≤ 600V,

CC

T

≤ 150° C

j

- 471 - A

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2 Rev. 2.3 Nov 09

SGW50N60HS

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter Symbol Conditions

min. typ. max.

IGBT Characteristic

Turn-on delay time t

Rise time tr - 32 -

Turn-off delay time t

Fall time tf - 16 -

Turn-on energy Eon - 1.08 -

Turn-off energy E

Total switching energy Ets

- 47 -

d(on)

- 310 -

d(off)

=25°C,

T

j

V

=400V,IC=50A,

CC

V

=0/15V,

GE

R

=6.8Ω

G

1)

L

=55nH,

σ

1)

C

=40pF

σ

Energy losses include

- 0.88 -

off

“tail” and diode
reverse recovery

2)

.

-

Switching Characteristic, Inductive Load, at T

Parameter Symbol Conditions

=150 °C

j

min. typ. max.

IGBT Characteristic

Turn-on delay time t

Rise time tr - 28 -

Turn-off delay time t

Fall time tf - 14 -

Turn-on energy Eon - 1 -

Turn-off energy E

Total switching energy Ets

Turn-on delay time t

Rise time tr - 31 -

Turn-off delay time t

Fall time tf - 20 -

Turn-on energy Eon - 1.5 -

Turn-off energy E

Total switching energy Ets

- 50 -

d(on)

- 225 -

d(off)

=150°C

T

j

=400V,IC=50A,

V

CC

=0/15V,

V

GE

R

= 1.8Ω

G

1)

L

=60nH,

σ

1)

C

=40pF

σ

Energy losses include

- 0.90 -

off

d(on)

d(off)

“tail” and diode
reverse recovery

- 48 -

- 350 -

=150°C

T

j

V

=400V,IC=50A,

CC

V

=0/15V,

GE

R

= 6.8Ω

G

1)

L

=60nH,

σ

1)

C

=40pF

σ

2)

.

Energy losses include

- 1.1 -

off

“tail” and diode
reverse recovery

2)

.

Value

Unit

ns

mJ

- 1.96 -

Value

Unit

ns

mJ

- 1.9 -

ns

mJ

- 2.6 -

1

Leakage inductance L

2

Diode used in this test is IDP45E60

and Stray capacity Cσ due to test circuit in Figure E.

σ

Power Semiconductors

3 Rev. 2.3 Nov 09

SGW50N60HS

140A

120A

100A

80A

60A

, COLLECTOR CURRENT

C

40A

I

20A

0A

10Hz 100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY

TC=80°C

TC=110°C

I

c

I

c

Figure 1. Collector current as a function of

100A

10A

, COLLECTOR CURRENT

C

I

1A

Figure 2. Safe operating area

switching frequency

(T

≤ 150°C, D = 0.5, VCE = 400V,

j

V

= 0/+15V, RG = 6.8Ω)

GE

tP=1µs

2µs

10µs

50µs

1ms

10ms

DC

1V 10V 100V 1000V

VCE, COLLECTOR-EMITTER VOLTAGE

(D = 0, T
V

GE

= 25°C, Tj ≤ 150°C;

C

=15V)

100A

90A

80A

70A

60A

50A

40A

30A

, COLLECTOR CURRENT

C

I

20A

10A

0A

25°C 75°C 125°C

, POWER DISSIPATION

tot

P

350W

250W

150W

50W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

≤ 150°C)

(T

j

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors

4 Rev. 2.3 Nov 09

A

SGW50N60HS

VGE=19V

15V

120A

90A

60A

, COLLECTOR CURRENT

C

I

30A

0A

0V 1V 2V 3V 4V

VCE, COLLECTOR-EMITTER VOLTAGE

13V
11V

9V
7V

Figure 5. Typical output characteristic

(T

= 25°C)

j

120A

90A

60A

, COLLECTOR CURRENT

C

I

30A

Figure 6. Typical output characteristic

VGE=19V

15V
13V
11V

9V
7V

0A

0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE

(Tj = 150°C)

120

90A

60A

, COLLECTOR CURRENT

C

I

30A

0A

0V 2V 4V 6V 8V

V

TJ=150°C

25°C

, GATE-EMITTER VOLTAGE T

GE

Figure 7. Typical transfer characteristic

=10V)

(V

CE

IC=100A

4,0V

3,5V

3,0V

2,5V

2,0V

1,5V

1,0V

COLLECTOR-EMITTER SATURATION VOLTAGE

0,5V

CE(sat),

0,0V

V

-50°C 0°C 50°C 100°C

, JUNCTION TEMPERATURE

J

Figure 8. Typical collector-emitter

saturation voltage as a function of
junction temperature

(V

= 15V)

GE

IC=50A

IC=25A

Power Semiconductors

5 Rev. 2.3 Nov 09

0Ω3Ω6

SGW50N60HS

t

d(off)

t

d(off)

100ns

t

f

t

d(on)

t, SWITCHING TIMES

t

r

10ns

0A 20A 40A 60A 80A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

100 ns

t, SWITCHING TIMES

10 ns

Figure 10. Typical switching times as a

function of collector current

(inductive load, T
V

=400V, VGE=0/15V, RG=6.8Ω,

CE

=150°C,

J

Dynamic test circuit in Figure E)

5,5V

t

d(of f)

5,0V

4,5V

t

f

Ω 9Ω 12Ω 15Ω

RG, GATE RESISTOR

function of gate resistor

(inductive load, T
V

=400V, VGE=0/15V, IC=50A,

CE

=150°C,

J

Dynamic test circuit in Figure E)

t

d(on)

t

r

100ns

t

d(on)

t

t, SWITCHING TIMES

r

t

f

10ns

25°C 50°C 75°C 100°C 125°C

4,0V

3,5V

3,0V

2,5V

GATE-EMITTER TRSHOLD VOLTAGE

2,0V

GE(th),

1,5V

V

1,0V

-50°C 0°C 50°C 100°C 150°C

max.

typ.

min.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V
V

=0/15V, IC=50A, RG=6.8Ω,

GE

=400V,

CE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I

= 1mA)

C

Dynamic test circuit in Figure E)

Power Semiconductors

6 Rev. 2.3 Nov 09

τ

τ

SGW50N60HS

*) Eon and Ets include losses
due to diode recovery

5mJ

4mJ

3mJ

2mJ

E, SWITCHING ENERGY LOSSES

1mJ

0mJ

0A 20A 40A 60A 80A

IC, COLLECTOR CURRENT

Ets*

Figure 13. Typical switching energy losses

Eon*

E

off

3.5 mJ

3.0 mJ

2.5 mJ

2.0 mJ

1.5 mJ

1.0 mJ

E, SWITCHING ENERGY LOSSES

0.5 mJ

0.0 mJ

Figure 14. Typical switching energy losses

as a function of collector current

(inductive load, T
V

=400V, VGE=0/15V, RG=6.8Ω,

CE

=150°C,

J

Dynamic test circuit in Figure E)

*) Eon and Ets include losses
due to diode recovery

Ets*

Eon*

E

off

0Ω 3Ω 6Ω 9Ω 12Ω 15Ω

RG, GATE RESISTOR

as a function of gate resistor

(inductive load, T
V

=400V, VGE=0/15V, IC=50A,

CE

Dynamic test circuit in Figure E)

=150°C,

J

*) Eon and Ets include losses
due to diode recovery

Ets*

10

2mJ

Eon*

10

1mJ

E, SWITCHING ENERGY LOSSES

0mJ

E

off

, TRANSIENT THERMAL RESISTANCE

thJC

Z

10

0°C 50°C 100°C

D=0.5

-1

K/W

0.2

0.1

0.05

-2

K/W

-3

K/W

1µs 10µs 100µs 1ms 10ms 100ms

0.02

0.01

single pulse

R ,(K/W)

0.116 0.0895

0.0729 2.45E-02

0.0543 1.95E-03

0.0386 2.07E-04

0.0173 1.05E-05

R

1

C1=

TJ, JUNCTION TEMPERATURE tP, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. IGBT transient thermal resistance

/ T)

(D = t

p

temperature

(inductive load, V
V

=0/15V, IC=50A, RG=6.8Ω,

GE

=400V,

CE

Dynamic test circuit in Figure E)

1/R1

C2=

τ

, (s)

2/R2

R

2

Power Semiconductors

7 Rev. 2.3 Nov 09

SGW50N60HS

C

iss

15V

12V

9V

6V

120V

480V

1nF

c, CAPACITANCE

, GATE-EMITTER VOLTAGE

GE

V

3V

0V

0nC 50nC 100nC 150nC 200nC 250nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(I

=50 A)

C

100pF

Figure 18. Typical capacitance as a function

700A

0V 10V 20V

VCE, COLLECTOR-EMITTER VOLTAGE

of collector-emitter voltage

(V

=0V, f = 1 MHz)

GE

C

oss

C

rss

15µs

10µs

5µs

, SHORT CIRCUIT WITHSTAND TIME

SC

t

0µs

10V 11V 12V 13V 14V

600A

500A

400A

300A

200A

, short circuit COLLECTOR CURRENT

100A

C(sc)

I

0A

10V 12V 14V 16V 18V

VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V

=600V, start at TJ=25°C)

CE

Power Semiconductors

Figure 20. Typical short circuit collector

current as a function of gate­emitter voltage

(V

≤ 600V, Tj ≤ 150°C)

CE

8 Rev. 2.3 Nov 09

SGW50N60HS

Power Semiconductors

9 Rev. 2.3 Nov 09

τ

SGW50N60HS

Figure A. Definition of switching times

p(t)

1

rrrr

1

T(t)

j

τ

2

2

12 n

Figure D. Thermal equivalent
circuit

τ

n

n

rr

T

C

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L

=55nH

σ

and Stray capacity Cσ =40pF.

Power Semiconductors

10 Rev. 2.3 Nov 09

SGW50N60HS

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Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Power Semiconductors

11 Rev. 2.3 Nov 09