Datasheet SGW20N60RUF Datasheet (Fairchild Semiconductor)

©2002 Fairchild Semiconductor Corporation SGW20N60RUF Rev. A1

IGBT

SGW20N60RUF

SGW20N60RUF

Short Circuit Rated IGBT

General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inv erters
where short circuit ruggedness is a required feature.

Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

CE(sat)

= 2.2 V @ IC = 20A

• High input impedance

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Symbol Description SGW20N60RUF Units

V

CES

Collector-Emitter Voltage 600 V

V

GES

Gate-Emitter Voltage ± 20 V

I

C

Collector Current @ TC = 25°C32 A
Collector Current @ T

C

= 100°C20 A

I

CM (1)

Pulsed Collector Current 60 A

T

SC

Short Circuit Withstand Time @ TC = 100°C10 µs

P

D

Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ T

C

= 100°C75 W

T

J

Operating Junction Temperature -55 to +150 °C

T

stg

Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Tem p. for soldering
Purposes, 1/8” from case for 5 seconds

300 °C

Symbol Parameter Typ. Max. Units

R

θJC

Thermal Resistance, Junction-to-Case -- 0.64 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 40 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

G

C

E

G

E

C

D2-PAK

SGW20N60RUF Rev. A1

SGW20N60RUF

©2002 Fairchild Semiconductor Corporation

Electrical Characteristics of the IGBT T

C

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

∆B

VCES

/

∆T

J

T emperature Coefficient of Breakdown
Voltage

V

GE

= 0V, IC = 1mA -- 0.6 -- V/°C

I

CES

Collector Cut-Off Current VCE = V

CES

, VGE = 0V -- -- 250 uA

I

GES

G-E Leakage Current VGE = V

GES

, VCE = 0V -- -- ± 100 nA

On Characteristics

V

GE(th)

G-E Threshold Voltage IC = 20mA, VCE = V

GE

5.0 6.0 8.5 V

V

CE(sat)

Collector to Emitter
Saturation Voltage

I

C

= 20A

,

VGE = 15V

-- 2.2 2.8 V

I

C

= 32A

,

VGE = 15V

-- 2.5 -- V

Dynamic Characteristics

C

ies

Input Capacitance

V

CE

= 30V, VGE = 0V,

f = 1MHz

-- 1323 -- pF

C

oes

Output Capacitance -- 254 -- pF

C

res

Reverse Transfer Capacitance -- 47 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 20A,

R

G

= 10Ω, V

GE

= 15V,

Inductive Load, T

C

= 25°C

-- 30 -- ns

t

r

Rise Time -- 49 -- ns

t

d(off)

Turn-Off Delay Time -- 48 70 ns

t

f

Fall Time -- 152 200 ns

E

on

Turn-On Switching Loss -- 524 -- uJ

E

off

Turn-Off Switching Loss -- 473 -- uJ

E

ts

Total Switching Loss -- 997 1400 uJ

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 20A,

R

G

= 10Ω, V

GE

= 15V,

Inductive Load, T

C

= 125°C

-- 30 -- ns

t

r

Rise Time -- 51 -- ns

t

d(off)

Turn-Off Delay Time -- 52 75 ns

t

f

Fall Time -- 311 400 ns

E

on

Turn-On Switching Loss -- 568 -- uJ

E

off

Turn-Off Switching Loss -- 1031 -- uJ

E

ts

Total Switching Loss -- 1599 2240 uJ

T

sc

Short Circuit Withstand Time

VCC = 300 V, V

GE

= 15V

@

TC = 100°C

10 -- -- us

Q

g

Total Gate Charge

V

CE

= 300 V, IC = 20A,

V

GE

= 15V

-- 55 80 nC

Q

ge

Gate-Emitter Charge -- 10 15 nC

Q

gc

Gate-Collector Charge -- 25 40 nC

L

e

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

SGW20N60RUF Rev. A1

SGW20N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 1. Typical Output Characteristics

Fig 2. Typical Saturation Vol ta ge Ch ar act er i stic s

Fig 3. Satur ation Voltage vs. Case
Temp er at ur e at Variant Current Level

Fig 4. Load Current vs. Frequ ency

Fig 5. Saturation Voltage vs. V

GE

Fig 6. Saturation Voltage vs. VGE

02468

0

10

20

30

40

50

60

20V

12V

15V

VGE = 10V

Common Emitter
TC = 25

℃

Collector Current, I

C

[A]

Collector - Emitter Voltage, VCE [V]

110

0

10

20

30

40

50

60

Common Emitter
V

GE

= 15V

T

C

= 25℃

━━

T

C

= 125℃ ------

Collector Current, I

C

[A]

Colle ctor - Emitter Volt age, VCE [V]

-50 0 50 100 150

0

1

2

3

4

5

20A

40A

30A

IC = 10A

Common Emitter
V

GE

= 15V

Collector - Emitter Voltage, V

CE

[V]

Case Temperature, TC [℃]

048121620

0

4

8

12

16

20

Common Emitter
T

C

= 25

℃

30A

20A

IC = 10A

Collec t o r - Emitter V o lt age, V

CE

[V]

Gate - Emitter Voltag e , VGE [V]

0 4 8 12 16 20

0

4

8

12

16

20

Common E mitter
T

C

= 125

℃

30A

20A

IC = 10A

Collector - Emitter Voltage, V

CE

[V]

Gate - Em itter V oltag e, VGE [V]

0

4

8

12

16

20

24

28

0.1 1 10 100 1000

Duty cycle : 50%
T

C

= 100

℃

Power Dissipation = 32W

VCC = 300V
Load Current : peak of square w ave

Frequency [KHz]

Load Current [A]

SGW20N60RUF Rev. A1

SGW20N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 7. Capaci tance Characterist i cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

Fig 10. Switching Loss vs. Gate Resistance

Fig 11. Turn-O n Ch ar acteristics vs.
Collector Current

Fig 12. Turn-Off Characteristics vs.
Collector Current

110

0

400

800

1200

1600

2000

2400

Cres

Coes

Cies

Common Emitter
V

GE

= 0V, f = 1MHz

T

C

= 25

℃

Capacitance [pF]

Collector - Emitter Voltage, VCE [V]

1 10 100

10

100

Common Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃

━━

TC = 125℃ ------

Ton

Tr

Switching Time [ns]

Gate Resistance, RG [Ω]

110100

100

1000

Toff

Tf

Toff

Tf

Common Emitter
V

CC

= 300V, VGE = ±15V

I

C

= 20A

T

C

= 25℃

━━

T

C

= 125℃ ------

Switchi n g Time [ns]

Gate Resistance, RG [Ω]

110100

100

1000

Eoff

Eon

Eoff

Common Emitter
V

CC

= 300V, VGE = ±15V

I

C

= 20A

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Loss [uJ]

Gate Resistance, RG [Ω]

10 15 20 25 30 35 40

10

100

Ton

Tr

Common Emitter
V

GE

= ±15V, RG = 10

Ω

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Tim e [n s]

Collector Current, IC [A]

10 15 20 25 30 35 40

100

1000

Tf

Toff

Toff

Tf

Common Em itter
V

GE

= ±15V, RG = 10

Ω

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Time [ns]

Collector Current, IC [A]

SGW20N60RUF Rev. A1

SGW20N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 14. Gate Charge Characteristics

Fig 15. SOA Characteristics Fig 16. Tu rn-Off SOA Characteristics

Fig 17. Transient Thermal Impedance of IGBT

Fig 13. Switching Loss vs. C ol l ect or Cu rr ent

10 15 20 25 30 35 40

100

1000

Eoff

Eon

Eoff

Common Emitter
V

GE

= ±15V, RG = 10

Ω

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Loss [uJ]

Collector Current, IC [A]

1 10 100 1000

1

10

100

Safe Operating Area
VGE = 20V, TC = 100

℃

Collect or C ur r e nt , I

C

[A]

Collector-Emitter Voltage, VCE [V]

0.3 1 10 100 1000

0.1

1

10

100

Single Nonrepetitive
Pulse T

C

= 25

℃

Curves must be derated
linearly with increase
in temperature

50

㎲

100

㎲

1

㎳

DC Operation

IC MAX. (Continuous )

IC MAX. (Pulsed)

Collector Current, I

C

[A]

Collector-E m itter Voltage, VCE [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

1E-3

0.01

0.1

1

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

Thermal Response, Zth jc [

℃

/W]

Rectangular Pulse Du ration [sec]

Pdm

t1

t2

Duty facto r D = t1 / t2
Peak Tj = Pdm

×

Zthjc + T

C

0 102030405060

0

3

6

9

12

15

300 V

200 V

VCC = 100 V

Common Emitter
RL = 15

Ω

TC = 25

℃

Gate - Emitter Voltage, V

GE

[ V ]

Gate Charge, Qg [ nC ]

©2002 Fairchild Semiconductor Corporation SGW20N60RUF Rev. A1

SGW20N60RUF

Package Dimension

10.00 ±0.20

10.00 ±0.20
(8.00)
(4.40)

1.27

±0.10

0.80 ±0.10

0.80 ±0.10

(2XR0.45)

9.90

±0.20

4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30

+0.10
–0.05

0.50

+0.10
–0.05

D2-PAK

Dimensions in Millimeters

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intended to be an exhaustive list of all such trademarks.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5©2002 Fairchild Semiconductor Corporation

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