Datasheet SGW10N60RUF Datasheet (Fairchild Semiconductor)

©2002 Fairchild Semiconductor Corporation SGW10N60RUF Rev. A1

IGBT

SGW10N60RUF

G

E

C

D2-PAK

SGW10N60RUF

Short Circuit Rated IGBT

General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inv erters
where short circuit ruggedness is a required feature.

Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

CE(sat)

= 2.2 V @ IC = 10A

• High input impedance

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Symbol Description SGW10N60RUF Units

V

CES

Collector-Emitter Voltage 600 V

V

GES

Gate-Emitter Voltage ± 20 V

I

C

Collector Current @ TC = 25°C16 A
Collector Current @ T

C

= 100°C10 A

I

CM (1)

Pulsed Collector Current 30 A

T

SC

Short Circuit Withstand Time @ TC = 100°C10 us

P

D

Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T

C

= 100°C30 W

T

J

Operating Junction Temperature -55 to +150 °C

T

stg

Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Tem p. for Soldering
Purposes, 1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Units

R

θJC

Thermal Resistance, Junction-to-Case -- 1.6 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 40 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

G

C

E

SGW10N60RUF Rev. A1

SGW10N60RUF

©2002 Fairchild Semiconductor Corporation

Electrical Characteristics of the IGBT T

C

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

∆B

VCES

/

∆T

J

T emperature Coefficient of Breakdown
Voltage

V

GE

= 0V, IC = 1mA -- 0.6 -- V/°C

I

CES

Collector Cut-Off Current VCE = V

CES

, VGE = 0V -- -- 250 uA

I

GES

G-E Leakage Current VGE = V

GES

, VCE = 0V -- -- ± 100 nA

On Characteristics

V

GE(th)

G-E Threshold Voltage IC = 10mA, VCE = V

GE

5.0 6.0 8.5 V

V

CE(sat)

Collector to Emitter
Saturation Voltage

I

C

= 10A

,

VGE = 15V

-- 2.2 2.8 V

I

C

= 16A

,

VGE = 15V

-- 2.5 -- V

Dynamic Characteristics

C

ies

Input Capacitance

V

CE

= 30V, VGE = 0V,

f = 1MHz

-- 660 -- pF

C

oes

Output Capacitance -- 115 -- pF

C

res

Reverse Transfer Capacitance -- 25 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 10A,

R

G

= 20Ω, V

GE

= 15V,

Inductive Load, T

C

= 25°C

-- 15 -- ns

t

r

Rise Time -- 30 -- ns

t

d(off)

Turn-Off Delay Time -- 36 50 ns

t

f

Fall Time -- 158 200 ns

E

on

Turn-On Switching Loss -- 141 -- uJ

E

off

Turn-Off Switching Loss -- 215 -- uJ

E

ts

Total Switching Loss -- 356 500 uJ

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 10A,

R

G

= 20Ω, V

GE

= 15V,

Inductive Load, T

C

= 125°C

-- 16 -- ns

t

r

Rise Time -- 33 -- ns

t

d(off)

Turn-Off Delay Time -- 42 60 ns

t

f

Fall Time -- 242 350 ns

E

on

Turn-On Switching Loss -- 161 -- uJ

E

off

Turn-Off Switching Loss -- 452 -- uJ

E

ts

Total Switching Loss -- 613 860 uJ

T

sc

Short Circuit Withstand Time

VCC = 300 V, V

GE

= 15V

@

TC = 100°C

10 -- -- us

Q

g

Total Gate Charge

V

CE

= 300 V, IC = 10A,

V

GE

= 15V

-- 30 45 nC

Q

ge

Gate-Emitter Charge -- 5 10 nC

Q

gc

Gate-Collector Charge -- 8 16 nC

L

e

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

SGW10N60RUF Rev. A1

SGW10N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

Fig 3. Saturation Voltage vs. Case
Temp erature at Variant Current Level

Fig 4. Load Current vs. Frequ enc y

Fig 5. Satur ation Voltage vs. V

GE

Fig 6. Saturation Voltage vs. VGE

110

0

5

10

15

20

25

30

Common Emitter
V

GE

= 15V

T

C

= 25℃

━━

T

C

= 125℃ ------

Collector Current, I

C

[A]

Collector - Emitter Voltage, VCE [V]

048121620

0

4

8

12

16

20

Common Emitter
T

C

= 125

℃

20A

10A

IC = 5A

Collector - Emitter Voltage, V

CE

[V]

Gate - Emitter Voltage, VGE [V]

0

2

4

6

8

10

12

14

16

0.1 1 10 100 1000

Duty cycle : 50%
T

C

= 100

℃

Power Dissipation = 18 W

VCC = 300V
Load Current : peak of s qu a re w ave

Frequency [KHz]

Load Current [A]

02468

0

5

10

15

20

25

30

35

40

20V

12V

15V

VGE = 10V

Common Emitter
TC = 25

℃

Collector Cu rrent, I

C

[A]

Collector - Emitter Voltage, VCE [V]

-50 0 50 100 150

1.0

1.5

2.0

2.5

3.0

3.5

4.0

20A

10A

IC = 5A

Common Emitter
V

GE

= 15V

Collector - Emitter Voltage, V

CE

[V]

Case Temperature, TC [℃]

048121620

0

4

8

12

16

20

Common Emitter
T

C

= 25

℃

20A

10A

IC = 5A

Collector - Emitter Voltage, V

CE

[V]

Gate - Emitter Voltage, VGE [V]

SGW10N60RUF Rev. A1

SGW10N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 7. Capaci tance Characterist i cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

Fig 10. Switching Loss vs. Gate Resistance

Fig 11. Turn-O n Ch ar acteristics vs.
Collector Current

Fig 12. Turn-Off Characteristics vs.
Collector Current

110

0

200

400

600

800

1000

1200

1400

Cres

Coes

Cies

Common Emitter
V

GE

= 0V, f = 1MHz

T

C

= 25

℃

Capacitance [pF]

Collector - Emitter Voltage, VCE [V]

10 100

10

100

Common E mitter
VCC = 300V, VGE = ±15V
IC = 10A
TC = 25℃

━━

TC = 125℃ ------

Ton

Tr

Switching Time [ns]

Gate Resistance, RG [Ω]

10 100

100

1000

Eoff

Eon

Eoff

Common Emitter
V

CC

= 300V, VGE = ±15V

I

C

= 10A

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Loss [uJ]

Gate Resistance, RG [Ω]

10 100

100

1000

Toff

Tf

Toff

Tf

Common Emitter
V

CC

= 300V, VGE = ±15V

I

C

= 10A

T

C

= 25℃

━━

T

C

= 125℃ ------

Switching Time [ns]

Gate Resistance, RG [Ω]

6 8 10 12 14 16 18 20

10

100

Ton

Tr

Common Emitter
V

GE

= ±15V, RG = 20

Ω

TC = 25℃

━━

T

C

= 125℃ ------

Switching Time [ns]

Collector Current, IC [A]

6 8 10 12 14 16 18 20

100

1000

Tf

Toff

Toff

Tf

Common Emitter
V

GE

= ±15V, RG = 20

Ω

TC = 25℃

━━

T

C

= 125℃ ------

Switching Time [ns]

Collector Current, IC [A]

SGW10N60RUF Rev. A1

SGW10N60RUF

©2002 Fairchild Semiconductor Corporation

Fig 14. Gate Charge Characteristics

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA Characteristics

Fig 17. Transient Thermal Impedance of IGBT

Fig 13. Switching Loss vs. Collector Current

0102030

0

3

6

9

12

15

VCC = 100 V

200 V

300 V

Common Emitter
RL = 30

Ω

TC = 25

℃

Gate - Emitter Voltage, V

GE

[ V ]

Gate Charge, Qg [ nC ]

1 10 100 1000

1

10

Safe Operating Area
VGE = 20V, TC = 100

℃

50

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

5101520

100

1000

Eon

Eoff

Common Emitter
V

GE

= ±15V, RG = 20

Ω

TC = 25℃

━━

T

C

= 125℃ ------

Switchi n g Lo ss [uJ]

Collector Current, IC [A]

0.1 1 10 100 1000

0.1

1

10

100

Single Nonrepetitive
Pulse T

C

= 25

℃

Curves must be derated
linearly with increase
in temperat ur e

IC MAX. (Continuous)

IC MAX. (Pulsed)

DC Operation

1

㎳

100us

50us

Collector Cur r ent, I

C

[A]

Collector-Emitter Voltage, VCE [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

0.1

1

10

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

Thermal Response, Zthjc [

℃

/W]

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty fac to r D = t1 / t2
Peak Tj = Pdm

×

Zthjc + T

C

©2002 Fairchild Semiconductor Corporation SGW10N60RUF Rev. A1

SGW10N60RUF

Package Dimension

10.00 ±0.20

10.00 ±0.20
(8.00)
(4.40)

1.27

±0.10

0.80 ±0.10

0.80 ±0.10

(2XR0.45)

9.90

±0.20

4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30

+0.10
–0.05

0.50

+0.10
–0.05

D2-PAK

Dimensions in Millimeters

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intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5©2002 Fairchild Semiconductor Corporation

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