Datasheet SGP10N60A, SGB10N60A, SGW10N60A Datasheet (INFINEON)

Fast IGBT in NPT-technology

SGP10N60A, SGB10N60A

SGW10N60A

• 75% lower E
combined with low conduction losses

compared to previous generation

off

C

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

G

E

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

P-TO-220-3-1
(TO-220AB)

P-TO-263-3-2 (D²-PAK)
(TO-263AB)

P-TO-247-3-1
(TO-247AC)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

SGP10N60A 600V 10A 2.3V

V

CE

I

C

V

CE(sat)

T

j

150°C

Package Ordering Code

TO-220AB Q67040-S4457
SGB10N60A TO-263AB Q67040-S4507
SGW10N60A TO-247AC Q67040-S4510

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage
DC collector current

= 25°C

T

C

= 100°C

T

C

Pulsed collector current, tp limited by T

jmax

Turn off safe operating area

V

≤ 600V, Tj ≤ 150°C

CE

Gate-emitter voltage
Avalanche energy, single pulse

= 10 A, VCC = 50 V, R

I

C

start at T

= 25°C

j

Short circuit withstand tim e

VGE = 15V, V

≤ 600V, Tj ≤ 150°C

CC

= 25 Ω,

GE

1)

Power dissipation

T

= 25°C

C

Operating junction and storage temperature

V

CE

I

C

I

Cpuls

-

V

GE

E

AS

t

SC

P

tot

T

j

, T

stg

600 V

20

10.6
40

40

±20

70 mJ

10

92 W

-55...+150

A

V

µs

°C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

1Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic

IGBT thermal resistance,

R

thJC

junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB

1)

R

R

thJA

thJA

TO-220AB
TO-247AC
TO-263AB 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise spec ified

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

Gate-emitter threshold voltage
Zero gate voltage collector current

Gate-emitter leakage current
Transconductance

V

(BR)CES

V

CE(sat)VGE

V

GE(th)

I

CES

I

GES

g

fs

VGE=0V, IC=500µA

= 15V, IC=10A

=25°C

T

j

T

=150°C

j

IC=300µA,VCE=V
VCE=600V,VGE=0V

=25°C

T

j

T

=150°C

j

VCE=0V,VGE=20V
VCE=20V, IC=10A

Dynamic Characteristic

Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge

Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current

2)

C

iss

C

oss

C

rss

Q

Gate

L

E

I

C(SC)

VCE=25V,
V

=0V,

GE

f=1MHz
VCC=480V, IC=10A

V

=15V

GE

TO-220AB
TO-247AC

VGE=15V,tSC≤10µs
V

≤ 600V,

CC

T

≤ 150°C

j

min. Typ. max.

600 - -

1.7

-

GE

345

-

-

- - 100 nA

-6.7-S

- 550 660

-6275

-4251

-5268nC

-

-

- 100 - A

1.35

62
40

Value

2

2.3

-

-

7

13

2.4

2.8

40

1500

-

-

K/W

Unit

V

µA

pF

nH

1)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2Jul-02

SGP10N60A, SGB10N60A

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Tj=25°C,
V

=400V,IC=10A,

CC

V

=0/15V,

GE

R

=25Ω,

G

1)

L

=180nH,

σ

1)

C

=55pF

σ

Energy losses include
“tail” and diode
reverse recovery.

Tj=150°C

=400V,IC=10A,

V

CC

V

=0/15V,

GE

R

=25Ω

G

1)

L

=180nH,

σ

1)

C

=55pF

σ

Energy losses include
“tail” and diode
reverse recovery.

SGW10N60A

Value

min. typ. max.

-2834

-1215

- 178 214

-2429

- 0.15 0.173

- 0.17 0.221

- 0.320 0.394

Value

min. typ. max.

-2834

-1215

- 198 238

-2632

- 0.260 0.299

- 0.280 0.364

- 0.540 0.663

Unit

ns

mJ

Unit

ns

mJ

1)

Leakage inductance L

a n d Stray capacity Cσ due to dynamic test circuit in Figure E.

σ

3Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

50A

I

c

TC=80°c

40A

30A

20A

, COLLECTOR CURRENT

C

I

10A

TC=110°c

I

c

0A

10Hz 100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of
switching frequency

(T

≤ 150°C, D = 0.5, VCE = 400V,

j

V

= 0/+15V, RG = 25Ω)

GE

tp=5µs

10A

15µs

50µs

1A

200µs

1ms

, COLLECTOR CURRENT

C

I

DC

0,1A

1V 10V 100V 1000V

Figure 2. Safe operating area

(D = 0, T

= 25°C, Tj ≤ 150°C)

C

120W

100W

80W

60W

40W

, POWER DISSIPATION

tot

P

20W

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature

(T

≤ 150°C)

j

25A

20A

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

25°C 50°C 75°C 100°C 125°C

Figure 4. Collector current as a function of
case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

35A

30A

25A

VGE=20V

20A

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

0V 1V 2V 3V 4V 5V

15V
13V
11V
9V
7V
5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(T

= 25°C)

j

35A

30A

25A

VGE=20V

20A

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

0V 1V 2V 3V 4V 5V

15V
13V
11V
9V
7V
5V

Figure 6. Typical output characteristics

(Tj = 150°C)

35A

30A

25A

20A

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

0V 2V 4V 6V 8V 10V

Tj=+25°C

+150°C

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

(V

= 10V)

CE

3,5V

IC=20A

3,0V

2,5V

IC=10A

2,0V

IC=5A

, COLLECTOR-EMITTER SATURATION VOLT AGE

1,5V

CE(sat)

V

0°C 50°C 100°C 150°C

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature

(V

= 15V)

GE

5Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

t

d(off)

100ns

t, SWITCHING TIMES

10ns

0A 5A 10A 15A 20A 25A

IC, COLLECTOR CURRENT RG, GATE RESIST OR

Figure 9. Typical switching times as a
function of collector current

(inductive load, T
V

= 0/+15V, RG = 25Ω,

GE

= 150°C, VCE = 400V,

j

Dynamic test circuit in Figure E)

t

f

t

d(on)

t

r

t

100ns

t, SWITCHING TIMES

d(off)

t

f

t

d(on)

t

r

10ns

0Ω 20Ω 40Ω 60 Ω 80Ω

Figure 10. Typical switching times as a
function of gate resistor

(inductive load, T
V

= 0/+15V, IC = 10A,

GE

= 150°C, VCE = 400V,

j

Dynamic test circuit in Figure E)

5,5V

t

d(off)

100ns

t

d(on)

t, SWITCHING TIMES

10ns

t

f

t

r

0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature

(inductive load, V
I

= 10A, RG = 25Ω,

C

= 400V, VGE = 0/+15V,

CE

Dynamic test circuit in Figure E)

5,0V

4,5V

4,0V

3,5V

3,0V

2,5V

2,0V

, GATE-EMITTER THRESHOLD VOLTAGE

1,5V

GE(th)

1,0V

V

-50°C 0°C 50°C 100°C 150°C

Figure 12. Gate-emitter threshold voltage
as a function of junction temperature

= 0.3mA)

(I

C

max.

typ .

min.

6Jul-02

SGP10N60A, SGB10N60A

E

E

E

E

τ

τ

SGW10N60A

E, SWITCHING ENERGY LOSSES

1,6mJ

1,4mJ

1,2mJ

1,0mJ

0,8mJ

0,6mJ

0,4mJ

0,2mJ

0,0mJ

*)

and

on

due to diode recovery.

0A 5A 10A 15A 20A 25A

include losses

ts

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses
as a function of collector current

(inductive load, T
V

= 0/+15V, RG = 25Ω,

GE

= 150°C, VCE = 400V,

j

Dynamic test circuit in Figure E)

Ets*

Eon*

E

off

1,0mJ

0,8mJ

0,6mJ

0,4mJ

*)

and

on

due to diode recovery.

include losses

ts

E, SWITCHING ENERGY LOSSES

0,2mJ

0Ω 20Ω 40Ω 60Ω 80Ω

Figure 14. Typical switching energy losses
as a function of gate resistor

(inductive load, T
V

= 0/+15V, IC = 10A,

GE

= 150°C, VCE = 400V,

j

Dynamic test circuit in Figure E)

Ets*

E

off

Eon*

0,8mJ

0,6mJ

0,4mJ

*) Eon and Ets include losses
due to diode recovery.

Ets*

0,2mJ

E, SWITCHING ENERGY LOSSES

0,0mJ

E

off

Eon*

0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses
as a function of junction temperature

(inductive load, V
I

= 10A, RG = 25Ω,

C

= 400V, VGE = 0/+15V,

CE

Dynamic test circuit in Figure E)

0

K/W

10

D=0.5

0.2

, TRANSIENT THERMAL IMPEDANCE

thJC

Z

10

10

10

-1

-2

-3

0.1

K/W

0.05

0.02

0.01

K/W

single pulse

K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

R,(K/W)

0.4287 0.0358

0.4830 4.3*10

0.4383 3.46*10

R

1

C1=

1/R1

C2=

tp, PULSE WIDTH

Figure 16. IGBT transient thermal
impedance as a function of pulse width

/ T)

(D = t

p

τ

, (s)

2/R2

-3

-4

R

2

7Jul-02

SGP10N60A, SGB10N60A

V

µ

SGW10N60A

25V

20V

15V

10V

120V

, GATE-EMITTER VOLTAG E

GE

5V

V

0V

0nC 25nC 50nC 75nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(I

= 10A)

C

480V

1nF

100pF

C, CAPACITANCE

10pF

0V 10V 20V 30V

Figure 18. Typical capacitance as a
function of collector-emitter voltage

(V

= 0V, f = 1MHz)

GE

C

iss

C

oss

C

rss

25

s

20

µs

µs

15

µs

10

5µ s

, SHORT CIRCUIT WITHSTAND TIME

sc

t

0µ s

10V 11V 12V 13V 14V 15

VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage

(V

= 600V, start at Tj = 25°C)

CE

200A

150A

100A

50A

, SHORT CIRCUIT COLLECTOR CURRENT

C(sc)

I

0A
10V 12V 14V 16V 18V 20V

Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

8Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

TO-220AB

TO-263AB (D2Pak)

dimensions

symbol

A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677

G 13.00 14.00 0.5118 0.5512

H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520

M 2.54 typ. 0.1 typ.

N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

symbol

A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E 2.54 typ. 0.1 typ.
F 0.65 0.85 0.0256 0.0335

G 5.08 typ. 0.2 typ.

H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720

M 2.30 2.50 0.0906 0.0984

N 15 typ. 0.5906 typ.
P 0.00 0.20 0.0000 0.0079

Q 4.20 5.20 0.1654 0.2047

R 8° max 8° max
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U 10.80 0.4252
V 1.15 0.0453

W 6.23 0.2453

X 4.60 0.1811
Y 9.40 0.3701
Z 16.15 0.6358

[mm] [inch]

min max min max

dimensions

[mm] [inch]

min max min max

9Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

TO-247AC

dimensions

symbol

A 4.78 5.28 0.1882 0.2079
B 2.29 2.51 0.0902 0.0988
C 1.78 2.29 0.0701 0.0902
D 1.09 1.32 0.0429 0.0520
E 1.73 2.06 0.0681 0.0811
F 2.67 3.18 0.1051 0.1252
G 0.76 max 0.0299 max
H 20.80 21.16 0.8189 0.8331
K 15.65 16.15 0.6161 0.6358

L 5.21 5.72 0.2051 0.2252
M 19.81 20.68 0.7799 0.8142
N 3.560 4.930 0.1402 0.1941

∅P

Q 6.12 6.22 0.2409 0.2449

[mm] [inch]

min max min max

3.61 0.1421

10 Jul-02

SGP10N60A, SGB10N60A

τ

τ

τ

SGW10N60A

Figure A. Definition of switching times

2
2

p(t)

1

rrrr

1

T(t)

j

12 n

Figure D. Thermal equivalent
circuit

n

n

rr

T

C

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L
and Stray capacity C

=180nH

σ

=55pF.

σ

11 Jul-02

SGP10N60A, SGB10N60A

SGW10N60A

Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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please contact your nearest Infineon Technologies Office.

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12 Jul-02

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