Datasheet SGSIF344FP Datasheet (SGS Thomson Microelectronics)



HIGH VOLTAGE FAST-SWITCHING

■ STMicroelectronics PREFERRED

SALESTYPE

■ HIGH VOLTAGECAPABILITY

■ VERYHIGH SWITCHING SPEED

■ LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:

■ SWITCHMODEPOWER SUPPLIES

■ HORIZONTAL DEFLECTIONFOR COLOUR

TVS ANDMONITORS

SGSIF344FP

NPN POWER TRANSISTOR

3

2

1

DESCRIPTION

The device is manufactured using Multiepitaxial

TO-220FP

Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitchingspeeds.

It is designed for high speed switching
applications such as power supplies and
horizontaldeflection circuits in TVsand monitors.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Uni t

V
V
V

I

I
P

T

Collector-Emitte r Volt age (VBE= 0) 1200 V

CES

Collector-Emitte r Volt age (IB= 0) 600 V

CEO

Emit t er-Base V olt age ( IC=0) 7 V

EBO

I

Collector Current 7 A

C

Collector Peak Current (tp<5ms) 12 A

CM

I

Base Current 5 A

B

Base Peak C urr ent (tp<5ms) 8 A

BM

Total D issipation at Tc=25oC40W

tot

St orage Tem per at u r e -65 to 150

stg

T

Max. Operating Junction Tempera t ur e 150

j

o

C

o

C

February 1999

1/6

SGSIF344FP

THERMAL DATA

R

thj-case

Ther mal Resistance Junct io n-c ase Max 3.12

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Un it

I

CES

I

CEO

I

EBO

V

CEO(sus)

Collector Cut- off
Current (V

BE

=0)

Collector Cut- off
Current (I

B

=0)

Emit ter Cut-o f f Current

=0)

(I

C

∗ Collector-E mitt er

V

= 1200 V 200 µA

CE

V

=380V

EC

=600V

V

EC

V

=7V 1 mA

BE

200

2

IC= 100 mA 600 V

Sust aining Voltag e

V

∗ Collector-E mitt er

CE(sat)

Saturation Voltage

V

∗ Base-Em itt er

BE(sat )

Saturation Voltage
RESI STIVE LOAD

t

t

on

s

t

f

Turn-on T ime
St orage Time
Fall Time

RESI STIVE LOAD

t

t

on

s

t

f

Turn-on T ime
St orage Time
Fall Time

RESI STIVE LOAD

t

t

on

s

t

f

Turn-on T ime
St orage Time
Fall Time

INDUCTI V E LOAD

t

s

t

f

St orage Time
Fall Time

INDUCTI V E LOAD

t

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

s

t

f

St orage Time
Fall Time

IC=3.5A IB=0.7A

=2.5A IB=0.35A

I

C

IC=3.5A IB=0.7A

=2.5A IB=0.35A

I

C

VCC=250V IC=3.5A
I

=0.7A IB1=-1.4A 0.7

B1

VCC=250V IC=3.5A

=0.7A IB1=-1.4A

I

B1

With A ntisaturation Network

VCC=250V IC=3.5A

=0.7A V

I

B1

)=-5V 0.7

BE(off

IC=3.5A hFE=5

CLAMP

=450V V

V
L = 300 µHR

BE(off)

=1.2Ω

BB

=-5V

IC=3.5A hFE=5

CLAMP

=450V V

V
L = 300 µHR

= 100oC

T

c

BE(off)

=1.2Ω

BB

=-5V

2.2

0.18

0.7

1.5

0.2

1

0.2

1.4

0.1

1.5

1.5

1.5

1.5

1.2

3.5

0.4

2.8

0.2

4

0.3

µA

mA

V
V

V
V

µs
µs
µs

µs
µs
µs

µs
µs
µs

µs
µs

µs
µs

2/6

SGSIF344FP

Safe OperatingArea

Derating Curve

ReverseBiased SOA

DC Current Gain

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

3/6

SGSIF344FP

ResistiveLoad Switching Times InductiveLoad SwitchingTimes

SwitchingTimes PercentanceVariation

4/6

TO-220FP MECHANICAL DATA

SGSIF344FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

5/6

SGSIF344FP

Information furnished is believed tobe accurate andreliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patentrights of STMicroelectronics. Specification mentioned inthis publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronicsGROUP OF COMPANIES

Australia -Brazil -Canada - China - France -Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -

Singapore -Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A.

http://www.st.com

.

6/6