
HIGH VOLTAGE FASTSWITCHING NPN
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
■ LOW BASE-DRIVEREQUIREMENTS
APPLICATIONS:
■ SWITCHMODE POWERSUPPLIES
■ HORIZONTALDEFLECTION FOR COLOUR
TVS ANDMONITORS
DESCRIPTION
The SGSF344 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
SGSF344
POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
V
V
V
I
I
P
T
June 1997
Collector-Emitte r Voltage (VBE= 0 ) 1200 V
CES
Collector-Emitte r Voltage (IB= 0 ) 600 V
CEO
Emit t er-Bas e Volt age (IC=0) 7 V
EBO
Collector Cur rent 7 A
I
C
Collector Pe ak Current (tp<5ms) 12 A
CM
Base Current 5 A
I
B
Base Peak Cur rent ( tp<5ms) 8 A
BM
Total Dissipation at Tc=25oC85W
tot
St orage Temperat u re -65 to 150
stg
Max. Oper a ti ng Jun c t ion T em perature 150
T
j
o
C
o
C
1/6

SGSF344
THERMAL DATA
R
thj-case
Ther mal Resistance Junct io n-c ase Max 1.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ . Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut -off
Current (V
BE
=0)
Collector Cut -off
Current (I
B
=0)
Emit ter Cut-off Curr ent
=0)
(I
C
∗ Co llector-E mitter
V
= 1200 V 200 µA
CE
V
=380V
EC
=600V
V
EC
V
=7V 1 mA
BE
200
2
IC= 10 0 mA 600 V
Sust aining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
t
ON
t
t
ON
t
s
t
f
s
t
f
Turn-on Time
St orage Time
Fall Time
Turn-on Time
St orage Time
Fall Time
IC=3.5A IB=0.7A
=2.5A IB=0.35A
I
C
IC=3.5A IB=0.7A
=2.5A IB=0.35A
I
C
RESI STIVE LOAD
=250v IC=3.5A
V
CC
=0.7A IB1=-1.4A
I
B1
RESI STIVE LOAD
=250v IC=3.5A
v
CC
I
=0.7A IB1=-1.4A
B1
0.7
2.2
0.18
0.7
1.5
0.2
1.5
1.5
1.5
1.5
1.2
3.5
0.4
With Antisaturation Network
0.7
1
0.2
1.4
0.1
2.8
0.2
4
0.3
s
t
f
s
t
f
s
t
f
Turn-on Time
St orage Time
Fall Time
St orage Time
Fall Time
St orage Time
Fall Time
t
ON
t
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
RESI STIVE LOAD
=250V IC=3.5A
V
CC
=0.7A VBE(off) = - 5 V
I
B1
INDUCTIVE LOAD
=3.5A hFE=5
I
C
= 450 V V
V
CL
L = 300 µHR
BE(of f)
BB
=-5V
=1.2Ω
INDUCTIVE LOAD
I
=3.5A hFE=5
C
= 450 V V
V
CL
L = 300 µHR
= 100oC
T
c
BE(of f)
BB
=-5V
=1.2Ω
µA
mA
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6

SGSF344
Safe OperatingArea
Derating Curve
ThermalImpedance
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/6

SGSF344
ResistiveLoad Switching Times InductiveLoad SwitchingTimes
SwitchingTimes Percentance Variation
ReverseBiased SOA
4/6

TO-220 MECHANICAL DATA
SGSF344
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
5/6

SGSF344
Informationfurnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results from its use.No
license isgranted by implicationor otherwise under anypatentor patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subject tochange without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascriticalcomponents inlifesupport devicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved
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