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HIGH VOLTAGE FASTSWITCHING NPN
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ SWITCHMODEPOWERSUPPLIES
SGSF324
POWER TRANSISTOR
DESCRIPTION
The SGSF324 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Symb o l Parameter Value Uni t
V
V
V
I
I
P
T
September 1997
Collector-Emitte r Voltage ( VBE= 0 ) 1200 V
CES
Collector-Emitte r Voltage ( IB= 0 ) 600 V
CEO
Emit t er-Bas e Volt age (IC=0) 7 V
EBO
Collector Cur rent 4 A
I
C
Collector Pe ak Current (tp<5ms) 8 A
CM
Base Current 3 A
I
B
Base Peak Cur rent ( tp<5ms) 6 A
BM
Total Dissipation at Tc=25oC70W
tot
St orage Temperat u re -65 to 15 0
stg
Max. Oper a ti ng Jun c t ion T em perature 150
T
j
o
C
o
C
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SGSF324
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junct io n-Cas e M ax
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ . Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut -off
Current (V
BE
=0)
Collector Cut -off
Current (I
B
=0)
Emit ter Cut-off Curr ent
=0)
(I
C
∗ Co llector-E mitter
= 1200 V 200 µA
V
CE
V
=380V
EC
=600V
V
EC
V
=7V 1 mA
BE
200 µA
IC= 10 0 mA 600 V
Sust aining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
t
ON
t
t
ON
t
s
t
f
s
t
f
Turn-on Time
St orage Time
Fall T ime
Turn-on Time
St orage Time
Fall T ime
IC=1.75A IB=0.35A
=1.25A IB=0.18A
I
C
IC=1.75A IB=0.35A
I
=1.25A IB=0.18A
C
RESI STIVE LOAD
=250v IC=1.75A
v
CC
=0.35A IB1=-0.7A
I
B1
RESI STIVE LOAD
V
=250v IC=1.75A
CC
=0.35A IB1=-0.7A
I
B1
0.6
3
0.2
0.6
2
0.16
1.5
1.5
1.5
1.5
1
4.5
0.35
With Antisaturation Network
0.6
1
0.5
1.2
0.1
2.5
0.2
3.7
0.3
s
t
f
s
t
f
s
t
f
Turn-on Time
St orage Time
Fall T ime
St orage Time
Fall T ime
St orage Time
Fall T ime
t
ON
t
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
RESI STIVE LOAD
=250V IC=1.75A
V
CC
=0.35A VBE(off) = - 5 V
I
B1
INDUCTIVE L O A D
=1.75A hFE=5
I
C
= 450 V V
V
CL
L = 300 µHR
BE(of f)
BB
=-5V
=2Ω
INDUCTIVE L O A D
=1.75A hFE=5
I
C
= 450 V V
V
CL
L = 300 µHR
= 100oC
T
c
BE(of f)
BB
=-5V
=2Ω
mA
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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SGSF324
Safe Operating AreaThermal Impedance
DCCurrent Gain
DeratingCurve
Collector EmitterSaturation Voltage
CollectorEmitter SaturationVoltage
BaseEmitterSaturation Voltage
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SGSF324
ResistiveLoad Switching Times Resistive Load Switching Times
SwitchingTimes PercentanceVariation ReverseBiasedSOA
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TO-220 MECHANICAL DATA
SGSF324
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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SGSF324
Informationfurnished is believed to be accurateand reliable. However,SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such information nor for any infringementof patents or otherrights of thirdparties whichmay results from its use.No
license isgranted byimplicationor otherwise underanypatentor patentrightsof SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject tochange without notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSON Microelectronics - Printedin Italy - All RightsReserved
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