Page 1
SGSF313
SGSF313PI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■ HIGH VOLTAGECAPABILITY(450VV
■ VERYHIGH SWITCHINGSPEED: t
TYPICALAT I
■ LOW SATURATIONVOLTAGE
■ COMPLETECHARACTERIZATION AT 100
■ U.L.RECOGNISED ISOWATT220 PACKAGE
=2.5A, IB1=0.5A, V
C
f
CEO
= 35ns
BEoff
)
=-5V
o
C
(U.L. FILE # E81734 (N)).
APPLICATION
■ SWITCHMODE POWERSUPPLIES
■ FLYBACKAND FORWARD SINGLE
TRANSISTOR LOWPOWER CONVERTERS
DESCRIPTION
The SGSF313 and SGSF313PI are high voltage
NPN FASTSWITCHING transistors designed to
be used as switch in high efficency OFF-LINE
(220V mains) switching power supplies for
consumer applications like sets VCR’s and
monitors.
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
SGSF313 SGSF313PI
V
V
V
V
I
I
P
T
September 1997
Collector-Emitte r Voltage (VBE= -2.5V) 1000 V
CEX
Collector-Emitte r Voltage (VBE= 0 ) 1000 V
CES
Collector-Emitte r Voltage (IB= 0 ) 450 V
CEO
Emit t er-Bas e Voltage ( IC=0) 10 V
EBO
I
Collector Current 7 A
C
Collector P e ak Cu rr ent (tp<5ms) 10 A
CM
I
Base Current 3 A
B
Base P e ak Current ( tp<5ms) 6 A
BM
Total Dissipation at Tc=25oC7035W
tot
St orage Tem perat ure -65 t o 150
stg
T
Max. Operating Junction Tempera t ure 150
j
o
C
o
C
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SGSF313 / SGSF313PI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 1.78 3.57
TO-220 ISOWATT221
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Mi n. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut- of f
Current (V
BE
=0)
Collector Cut- of f
Current (I
B
=0)
Collector-Emitter
V
=1000V
CE
=1000V Tj= 125oC
V
CE
V
=450V 100 µA
EC
10
100
IC= 10 0 m A L = 25 mH 450 V
Sust aining V olt age
V
∗ Collec tor-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C ur rent Gain IC=1A VCE= 2.5 V
FE
RESI STIVE LOAD
t
ON
t
s
t
f
Turn-on T ime
St orage Time
Fall Time
RESI STIVE LOAD
t
ON
t
s
t
f
Turn-on T ime
St orage Time
Fall Time
RESI STIVE LOAD
t
ON
t
s
t
f
Turn-on T ime
St orage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
St orage Time
Fall Time
IC=1A IB=0.1A
I
=2A IB=0.4A
C
=2.5A IB=0.5A
I
C
=1A IB=0.1A Tj= 125oC
I
C
=2A IB=0.4A Tj= 125oC
I
C
IC=1A IB=0.1A
I
=2A IB=0.4A
C
=2.5A IB=0.5A
I
C
=1A VCE=5V
I
C
=2A VCE=1V
I
C
=5mA VCE=5V
I
C
=1A VCE=2.5V Tj= 125oC
I
C
=1A VCE=5V Tj= 125oC
I
C
=2A VCE=1V Tj= 125oC
I
C
VCC=250V IC=2.5A
=0.5A IB2=-1A 0.5
I
B1
VCC=250V IC=2.5A
I
=0.5A IB2=-1A
B1
With Antisaturation Network
VCC=250V IC=2.5A
=0.5A V
I
B1
IC=2.5A hFE=5A
V
V
=-5V RBB=2Ω
BE(off)
= 300 V L = 300 µH
CL
IC=2.5A hFE=5A
V
V
T
=-5V RBB=2Ω
BE(off)
= 300 V L = 300 µH
CL
= 100oC
j
=-5V 0.5
BE(off)
12
15
10
30
6
25
28
12
1.5
0.18
0.5
1.1
0.13
1.1
0.13
1
0.1
0.5
0.45
0.75
0.6
0.8
1.1
1.25
1.3
45
1
2.5
0.3
2
0.2
3
0.3
µA
µA
V
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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Page 3
SGSF313/ SGSF313PI
Safe OperatingAreaThermalImpedance
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
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Page 4
SGSF313 / SGSF313PI
InductiveFall Time InductiveStorage Time
ReverseBiased SOA
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Page 5
TO-220 MECHANICAL DATA
SGSF313/ SGSF313PI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
F
H2
G
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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Page 6
SGSF313 / SGSF313PI
ISOWATT220MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
P011G
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Page 7
SGSF313/ SGSF313PI
Informationfurnished is believedto be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or other rights of third parties which may results from its use. No
license isgranted by implication or otherwise under any patent or patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject tochange without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuseas criticalcomponentsin life supportdevicesor systems without express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea - Malaysia - Malta - Morocco- The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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