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FAST-SWITCH HOLLOW-EMITTER
■ VERY H IGH SWITC HING SPEED
■ NPN TRANSISTOR
■ LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■ SWITCH MODE P OW ER SUP P LIE S
DESCRIPTION
The SGSIF461 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switchi ng speeds.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
SGSIF461
NPN TRANSI STOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 850 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 15 A
I
C
Collector Peak Current (tp < 5 ms) 25 A
CM
Base Current 8 A
I
B
Base Peak Current (tp < 5 ms) 15 A
BM
Total Dissipation at Tc = 25 oC55W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 1997
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Page 2
SGSIF461
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 2.2
ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 700 V 200 µA
V
CE
= 380 V
V
EC
V
= 400 V
EC
= 7 V 1 mA
V
BE
200
2
IC = 100 mA 400 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
t
t
ON
t
ON
t
s
t
f
s
t
f
Turn-on Time
Storage Time
Fall Time
Turn-on Time
Storage Time
Fall Time
IC = 10 A IB = 2 A
I
= 5.5 A IB = 0.8 A
C
IC = 10 A IB = 2 A
I
= 5.5 A IB = 0.8 A
C
RESISTIVE LOAD
V
= 250 v IC = 10 A
CC
I
= 2 A IB2 = -2I
B1
RESISTIVE LOAD
V
= 250 v IC = 10 A
CC
I
= 2 A IB2 = -2I
B1
B1
B1
1
1.4
0.25
1
1
0.15
1.5
1.5
1.5
1.5
1.7
2.3
0.5
With Antisaturation Network
t
ON
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
s
t
f
s
t
f
Turn-on Time
Storage Time
Fall Time
Storage Time
Fall Time
Storage Time
Fall Time
RESISTIVE LOAD
V
= 250 V IC = 10 A
CC
I
= 2 A VBE(off) = - 5 V
B1
INDUCTIVE LOAD
I
= 10 A hFE = 5
C
V
= 350 V V
CL
L = 300 µH R
BE(off)
BE(off)
= -5 V
= 1.2 Ω
INDUCTIVE LOAD
I
= 10 A hFE = 5
C
V
= 350 V V
CL
L = 300 µH R
T
= 100 oC
c
BE(off)
BE(off)
= -5 V
= 1.2 Ω
1
1
0.06
1.4
0.1
2.8
0.2
4
0.3
µA
mA
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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Page 3
ISOWATT218 MECHANICAL DATA
SGSIF461
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U4.6 0.181
mm inch
L3
N
E
A
D
C
L5
L2
L6
D1
F
M
U
H
G
123
L1
L4
P025C
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Page 4
SGSIF461
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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