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SILICON PNP POWER DARLINGTON TRANSISTOR
June 1997
■ SGS-THO MS ON PRE F ERRE D SA LES T YPE
■ PNP DARLING T O N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■ GENERAL PURPOSE SWITCHING
SGS125
DESCRIPTION
The SGS125 is a silicon epitaxial-base PNP
transistor in monolithic Darlington configuration in
SOT82 plastic package, intented for use in power
linear and switching applications.
ABSOLUT E MAXIMUM RATI NG S
3
2
1
SOT-82
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. 5 KΩ R2 Typ. 150 KΩ
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) - 60 V
CBO
Collector-Emitter Voltage (IB = 0) - 60 V
CEO
Base-Emitter Voltage (IC = 0) - 5 V
EBO
Collector Current - 5 A
I
C
Collector Peak Current - 8 A
CM
Base Current - 0.1 A
I
B
Total Power Dissipation at T
tot
T
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
65
2
W
W
o
C
o
C
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SGS125
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHAR ACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
= - 30 V - 0.5 mA
V
CE
= - 60 V - 0.2 mA
V
CB
= - 5 V - 2 mA
V
EB
I
= - 30 mA - 60 V
C
Sustaining Voltage
(I
= 0)
B
* Collector-Emitter
V
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC = - 3 A VCE = - 3 V - 2.5 V
BE(on)
h
* DC Current Gain IC = - 0.5 A VCE = - 3 V
FE
IC = - 3 A IB = -12 mA
I
= - 5 A IB = - 20 mA
C
I
= - 3 A VCE = - 3 V
C
- 2
- 4
1000
1000
V
V
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SOT-82 MECHANICAL DATA
SGS125
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.444
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.04 0.106
c1 1.0 1.3 0.039 0.05
D 15.4 16 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
H 2.54 0.100
H2 2.15 0.084
mm inch
C
A
F
B
H2
H
D
c1
b
b1
e
e3
P032A
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SGS125
4/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infring emen t of pat ents or other rights of th ird partie s which ma y results from its use. No
license is granted by implication or otherwise under any patent or patent rig hts of SGS-TH OMSON Microelectronics. Sp ecifications mention ed
in this publication are subjec t to change without notice. This p u blication supersedes and replaces all information previo us ly su ppli ed.
SGS-THOMSON Microelectronics products are not aut horized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSO N M icr oelecto n ics.
© 1997 SGS-THOMSON Microelectronics - Print ed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mor oc co - The Net h e rlands -
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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