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SGM3055
5.8A , 30V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
28 m
DESCRIPTION
The GM3055 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Simple Drive Requirement
MARKING
3055
= Date code
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89
A
Top View
K
L
B
C
1
2
3
4
E
D
F G H J
REF.
Millimeter Millimete
Min. Max.
A 4.40 4.60 G - B 4.05 4.25 H 0.89 1.20
C 2.40 2.60 J 0.35 0.41
D 1.40 1.60 K 0.70 0.80
E 3.00 REF. L 1.50 REF.
F 0.40 0.52
D
REF.
Min. Max.
G
SOT-89 1K 7 inch
S
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 I
Power Dissipation 3 P
Linear Derating Factor 0.0118 W / °C
Operating Junction & Storage Temperature TJ, T
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). R
Thermal Resistance Junction-Case1(Max). R
TA = 25°C 5.8 A
T
A
=25°C unless otherwise specified)
A
I
D
= 70°C
30 A
DM
1.5 W
D
-55~150 °C
STG
85 °C / W
θJA
30 °C / W
θJC
4.7 A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-May-2012 Rev. C Page 1 of 4
Page 2
SGM3055
5.8A , 30V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
28 m
ELECTRICAL CHARACTERISTICS (T
Parameter
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage V
Gate-Source Leakage Current I
=25°C unless otherwise specified)
J
Symbol Min. Typ. Max.
30 - - V VGS=0, ID=250μA
DSS
△BV
/△TJ - 0.021 - V / °C Reference to 25°C, ID=1mA
DSS
1.2 - 2.5 V VDS=VGS, ID=250μA
GS(th)
- - ±100 nA VGS= ±20V
GSS
TJ=25°C - - 1 VDS=24V, VGS=0
Drain-Source Leakage Current
TJ=55°C
I
DSS
- - 5
- - 28 VGS=10V, ID=5A
Static Drain-Source On-Resistance 2 R
DS(ON)
- - 40
Total Gate Charge 2 Q
- 6 8.4
g
Gate-Source Charge Qgs - 2.5 3.5
Gate-Drain (“Miller”) Charge Qgd - 2.1 2.9
Turn-on Delay Time 2 T
- 2.4 4.8
d(on)
Rise Time Tr - 7.8 14
Turn-off Delay Time T
- 22 44
d(off)
Fall Time Tf - 4 8
Unit Teat Conditions
μA
VDS=24V, VGS=0
mΩ
nC
nS
=4.5V, ID=4A
V
GS
=5A
I
D
V
=15V
DS
V
=4.5V
GS
V
=15V
DD
I
=5A
D
V
=10V
GS
R
=3.3Ω
G
R
=1.9Ω
D
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 572 800
iss
- 81 112
oss
- 65 91
rss
Source-Drain Diode
Forward On Voltage2 V
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150°C junction temperature
4. The data is theoretically the same as I
1.4
I
2.4
I
and IDM , in real applications, should be limited by total power dissipation.
D
- - 1.2 V IS=3A, VGS=0, TJ=25°C
SD
- - 5.8 A
S
- - 30 A
SM
pF
=0
V
GS
V
=15V
DS
f=1.0 MHz
V
=0, VS=1.2V
D=VG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-May-2012 Rev. C Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM3055
N-Channel Enhancement Mode Power MOSFET
5.8A , 30V , R
DS(ON)
28 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-May-2012 Rev. C Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM3055
N-Channel Enhancement Mode Power MOSFET
5.8A , 30V , R
DS(ON)
28 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-May-2012 Rev. C Page 4 of 4
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