Page 1
Top View
1
2
3
4
A
B
D
L
K
F G H J
E
C
Millimeter
Millimeter
Min. Max.
Min. Max.
2310A
1
G
3
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM2310A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SGM2310A is universally
used for all commercial-industrial applications.
FEATURES
Simple drive requirement
Super high density cell design for extremely low R
MARKING
DS(ON)
SGM2310A
5 A, 60 V, R
N-Channel Enhancement Mode Power MOSFET
REF.
A 4.40 4.60 G - B 4.05 4.25 H 0.89 1.20
C 2.40 2.60 J 0.35 0.41
D 1.40 1.60 K 0.70 0.80
D
24
E 3.00 REF. L 1.50 REF.
F 0.40 0.52
DS(ON)
115 mΩ
SOT-89
REF.
= Date code
S
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current3 ID @ TA = 25°C 5.0 A
Continuous Drain Current3 ID @ TA = 70°C 4.0 A
Pulsed Drain Current
Power Dissipation PD @ TA = 25°C 1.5 W
Linear Derating Factor 0.01 W / °C
Operating Junction & Storage Temperature TJ, T
1,2
IDM 10 A
-55~150 °C
STG
THERMAL DATA
PARAMETER SYMBOL VALUE UNIT
Thermal Resistance Junction-Ambient3(Max). R
83.3 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
16-Dec-2009 Rev. A Page 1 of 4
Page 2
SGM2310A
5 A, 60 V, R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
115 mΩ
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
PARAMETER SYMBOL MIN TYP MAX UNIT
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Transconductance gfs - 12 - S V
Gate-Source Leakage Current I
Drain-Source Leakage Current (TJ=25 )℃ - - 1 VDS = 60 V, VGS = 0
Drain-Source Leakage Current (TJ=70 )℃
Static Drain-Source On-Resistance R
Total Gate Charge2 Qg - 4.0
Gate-Source Charge Qgs - 1.2
Gate-Drain (“Miller”) Charge Qgd - 1.0
Turn-on Delay Time2 T
Rise Time Tr - 12 Turn-off Delay Time T
Fall Time Tf - 10 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Forward On Voltage2 VSD - - 1.2
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
60 - - V VGS = 0, ID = 250µA
DSS
0.5
GS(th)
- - ±100 nA VGS = ±20V
GSS
I
DSS
DS(ON)
- 6 -
d(on)
- 18 -
d(off)
- 320
iss
- 42 -
oss
- 20 -
rss
SOURCE-DRAIN DIODE
- 1.5
- - 10
- - 115
- - 125
V VDS=VGS, ID=250µA
DS
µA
VDS = 60 V, VGS = 0
VGS=10V, ID=5.0A
mΩ
VGS=4.5V, ID=4.5A
-
-
-
-
ID = 4 A
nC
VDS = 30 V
VGS =4.5 V
VDD = 30 V
ID =2.5 A
nS
VGS =10 V
RG = 6Ω, RL = 12Ω
VGS = 0 V
pF
VDS = 30 V
f = 1.0 MHz
V IS=2.5A, VGS=0V
= 15V, ID = 4A
TEST CONDITIONS
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
16-Dec-2009 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM2310A
5 A, 60 V, R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
115 mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
16-Dec-2009 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM2310A
5 A, 60 V, R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
115 mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
16-Dec-2009 Rev. A Page 4 of 4
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