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SGM2306A
Elektronische Bauelemente
Description
The SGM2306A utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SGM2306A is universally used for all commercialindustrial surface mount applications.
Features
* Lower On-Resistance
* Capable Of 2.5V Gate drive
D
G
S
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
REF.
5A, 30V,RDS(ON) 35m
Ω
SOT-89
Millimeter
Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5° TYP.
M 0.70 REF.
REF.
Millimeter
Min. Max.
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V
Continuous Drain Current, VGS @4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
1,2
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Tj, Tstg
o
C
o
C
o
C
30
±12
5.0
4.0
20
1.5
0.012
-55~+150
Symbol Ratings Unit
Rthj-a
83.3
V
V
W
W / C
o
o
A
A
A
o
C
/W C
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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SGM2306A
5A, 30V,RDS(ON) 35m
Elektronische Bauelemente
o
C
o
)
C
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
N-Channel Enhancement Mode Power Mos.FET
Min. Unit
30
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.1
_
_
_
_
_
_
_
_
8.5
1.5
3.2
6
20
20
3
660
90
70
_
_
1.2
±
100
1
25
35
50
90
15
_
_
_
_
1050
_
30
_
_
_
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=250uA
Ω
o
=5A
D=5
A
D=2.6A
D=1
A
Reference to 25C , I
VDS=VGS, ID=250uA
±
VGS= 20V
VDS=30V,VGS=0
VDS=24V,VGS=0
VGS=10V, ID
VGS=4.5V, I
VGS=2.5V, I
VGS=1.8V, I
ID=5A
VDS=16 V
VGS=4.5V
V
DD=15V
ID=5A
VGS=10V
R
G=3.3
Ω
RD=3
VGS=0V
VDS=25V
f=1.0MHz
D=1m
A
Forward Transconductance
Gfs
13
__
S
VDS=5V, ID=5A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Reverse Recovery Time
2
2
Reverse Recovery Change
Notes:
1.
Pulse width limited by Max. junction temperature.
Pulse width 300us, dutycycle 2%.
2.
≦
≦
3.Surface mounted on FR4 board, t 10sec.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
≦
V
SD
Trr
Q
rr
Min. Unit
_
_
Typ.
__
14
7
1.2
_
_
V
nS
nC
Test Condition
IS=1.2A, VGS=0V.
IS=5A, VGS=0V.
dl/dt=100A/us
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SGM2306A
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
5A, 30V,RDS(ON) 35m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Page 4
SGM2306A
Ω
Elektronische Bauelemente
5A, 30V,RDS(ON) 35m
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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