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Elektronische Bauelemente
FEATURES
The SGM2305A provide the designer with
best combination of fast switching,
low on-resistance and cost-effectiveness.
The SGM2305A is universally preferred for
all commercial-industrial surface mount
applications and suited for low voltage
applications such as DC/DC converters.
Simple Drive Requirement
Surface Mount Device
PACKAGE INFORMATION
Weight: 0.0508 g (approximately)
MARKING
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
D
2
1
G
3
S
SGM2305A
-3.2 A, -30 V, R
A
Top View
K
F G H J
L
E
REF.
Millimeter Millimete
Min. Max.
A 4.40 4.60 G - B 4.05 4.25 H 0.89 1.20
C 2.40 2.60 J 0.35 0.41
D 1.40 1.60 K 0.70 0.80
E 3.00 REF. L 1.50 REF.
F 0.40 0.52
DS(ON)
SOT-89
C
80 mΩ
B
1
D
REF.
2
4
3
Min. Max.
2305A
= Date code
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings
Drain-Source Voltage VDS
Gate-Source Voltage VGS ±12 V
Continuous Drain Current3 I
Continuous Drain Current3 I
Pulsed Drain Current
Total Power Dissipation PD @ TA = 25°C 1.5 W
Linear Derating Factor 0.012 W / °C
Operating Junction & Storage temperature TJ, T
1,2
I
@ TA = 25°C -3.2 A
D
@ TA = 70°C -2.6 A
D
-10 A
DM
-55~150 °C
STG
-30
Unit
V
THERMAL DATA
Parameter Symbol Value Unit
Thermal Resistance Junction-Ambient3 Max. R
83.3 °C / W
θJA
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2008 Rev. A Page 1 of 4
Page 2
SGM2305A
-3.2 A, -30 V, R
Elektronische Bauelemente
P-Channel Enhancement Mode Power MOSFET
DS(ON)
80 mΩ
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min Typ
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature Coefficient ΔBV
Gate Threshold Voltage V
Forward Trans-conductance gfs - 9 - S V
Gate-Source Leakage Current I
Drain-Source Leakage Current (TJ=25℃) - - -1 VDS = -30 V, VGS = 0
Drain-Source Leakage Current (TJ=70℃)
= 25°C unless otherwise specified)
A
Max Unit Test Conditions
-30 - - V VGS = 0, ID = -250 uA
DSS
/ ΔTJ- -0.1 - V / °C Reference to 25°C, ID = -1 mA
DSS
-0.5 - -1.2 V VDS=VGS, ID= -250 uA
GS(th)
= -5V, ID = -3A
DS
- - ±100 nA VGS = ±12V
GSS
I
DSS
- - -25
uA
V
= -24 V, VGS = 0
DS
- - 65 VGS=-10V, ID=-3.2A
- - 80 VGS=-4.5V, ID=-3.0A
Static Drain-Source On-Resistance R
Total Gate Charge2 Q
Gate-Source Charge Qgs - 1.8 -
Gate-Drain (“Miller”) Charge Qgd - 3.6 -
Turn -on Delay Time2 T
Rise Time Tr - 15 -
Turn-off Delay Time T
Fall Time Tf - 15 -
DS(ON)
- - 150 VGS=-2.5V, ID=-2.0A
- - 250
- 10 18
g
- 7 -
d(on)
- 21 -
d(off)
mΩ
nC
nS
V
=-1.8V, ID=-1.0A
GS
= -3.2 A
I
D
V
= -24 V
DS
V
= -4.5 V
GS
V
= -15 V
DS
I
= -3.2 A
D
V
= -10 V
GS
R
= 3.3 Ω
G
R
= 4.6 Ω
D
Input Capacitance C
Output Capacitance C
- 735 1325
iss
- 100 -
oss
pF
V
GS
V
DS
= 0 V
= -25 V
f = 1.0 MHz
Reverse Transfer Capacitance C
- 80 -
rss
SOURCE-DRAIN DIODE
Parameter Symbol Min Typ
Forward On Voltage2 V
Reverse Recovery Time2 T
Reverse Recovery Charge Qrr - 19 - nC dl/dt = 100 A / uS
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
- - -1.2 V IS=-1.2A, VGS=0V
SD
- 24 - ns IS=-3.2A, VGS=0V
rr
Max Unit Test Conditions
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2008 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM2305A
-3.2 A, -30 V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
80 mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2008 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES (cont’d)
SGM2305A
-3.2 A, -30 V, R
P-Channel Enhancement Mode Power MOSFET
DS(ON)
80 mΩ
F=1.0MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2008 Rev. A Page 4 of 4
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