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SGM0410
3.5A , 100V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
170 m
DESCRIPTION
The SGM0410 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
0410
= Date code
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7 inch
SOT-89
A
Top View
K
L
B
C
1
2
3
4
E
D
F G H J
REF.
Millimeter Millimete
Min. Max.
A 4.40 4.60 G - B 4.05 4.25 H 0.89 1.20
C 2.40 2.60 J 0.35 0.41
D 1.40 1.60 K 0.70 0.80
E 3.00 REF. L 1.50 REF.
F 0.40 0.52
REF.
Min. Max.
D
G
S
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
VGS=5V, TA=25°C 3.5 A
Continuous DrainCurrent3@
Pulsed Drain Current
1,2
Power Dissipation TA=25°C PD 2 W
Linear Derating Factor 0.016 W / °C
Operating Junction & Storage Temperature TJ, T
Thermal Resistance Junction-Ambient3(Max). R
VGS=5V, TA=70°C
I
=25°C unless otherwise specified)
A
I
D
10 A
DM
-55~150 °C
STG
Thermal Resistance Rating
62.5 °C / W
JA
2.2 A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Apr-2012 Rev.B Page 1 of 4
Page 2
SGM0410
3.5A , 100V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
170 m
ELECTRICAL CHARACTERISTICS (T
Parameter
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
=25°C unless otherwise specified)
J
Symbol Min. Typ. Max.
100 - - V VGS=0, ID=1mA
DSS
1 - 2 V VDS=VGS, ID=250μA
GS(th)
Unit Teat Conditions
Forward Transconductance gfs - 4 - S VDS=10V, ID=2.5A
Gate-Source Leakage Current I
Drain-Source Leakage Current I
- - ±100 nA VGS=±20V
GSS
- - 10 μA VDS=100V, VGS=0
DSS
- - 170 VGS=10V, ID=2.6A
Static Drain-Source On-Resistance R
Total Gate Charge 2 Q
Gate-Source Charge Qgs - 4.4 -
Gate-Drain (“Miller”) Charge Qgd - 3 -
Turn-on Delay Time 2 T
Rise Time Tr - 9.4 -
Turn-off Delay Time T
Fall Time Tf - 2.6 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DS(ON)
- 11.2 -
g
- 9 -
d(on)
- 26.8 -
d(off)
- 975 -
iss
- 38 -
oss
- 27 -
rss
- - 200
mΩ
VGS=5V, ID=1.7A
=3.5A
I
D
V
nC
nS
pF
V
V
I
D
V
R
R
V
V
DS
GS
DD
=1A
GS
G
D
GS
DS
f=1.0 MHz
=80V
=5V
=30V
=10V
=6Ω
=30Ω
=0
=25V
Source-Drain Diode
Forward On Voltage2 V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test.
3. Surface mounted on 1 in
2
copper pad of FR4 board;135°C /w when mounted on Min. copper pad.
- - 1.5 V IS=3.5A, VGS=0
SD
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Apr-2012 Rev.B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM0410
N-Channel Enhancement Mode Power MOSFET
3.5A , 100V , R
DS(ON)
170 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Apr-2012 Rev.B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SGM0410
3.5A , 100V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
170 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Apr-2012 Rev.B Page 4 of 4
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