Page 1
SGB15N60HS
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High Speed IGBT in NPT-technology
• 30% lower E
compared to previous generation
off
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
increase with temperature
off
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IC E
V
CE
Tj Marking Package
off
C
G
PG-TO-263-3-2 ( D²-PAK)
(TO-263AB)
E
SGB15N60HS 600V 15A 200µJ
150°C
G15N60HS
PG-TO-263-3-2
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage
DC collector current
T
= 25°C
C
T
= 100°C
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
≤ 600V, Tj ≤ 150°C
V
CE
Gate-emitter voltage static
transient (t
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
<1µs, D<0.05)
p
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h T
CE
I
C
Cpuls
-
V
GE
t
SC
P
tot
T
j ,Tstg
j(tl)
600 V
27
A
15
60
60
±20
±30
10
138 W
-55...+150
175
V
µs
°C
Soldering temperature (reflow soldering, MSL1) - 245
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev 2.3 Oct 06
Page 2
SGB15N60HS
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Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
R
thJC
thJA
0.9
62
K/W
R
junction – ambient
SMD version, device on PCB1)
R
thJA
40
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
VCE=20V, IC=15A
fs
VGE=0V, IC=500µA
VGE = 15V, IC=15A
T
=25°C
j
T
=150°C
j
=400µA,VCE=V
I
C
VCE=600V,VGE=0V
=25°C
T
j
T
=150°C
j
VCE=0V,VGE=20V
600 - -
GE
3 4 5
-
-
2.8
3.5
-
-
- - 100 nA
- 10 S
3.15
4.00
2000
40
V
µA
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
iss
C
oss
C
rss
VCC=480V, IC=15A
Q
Gate
L
E
=25V,
V
CE
V
=0V,
GE
f=1MHz
- 810
- 83
- 51
pF
- 80 nC
V
=15V
GE
- 7 nH
measured 5mm (0.197 in.) from case
Short circuit collector current2)
I
C(SC)
=15V,tSC≤10µs
V
GE
V
≤ 400V,
CC
≤ 150°C
T
j
- 135 A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev 2.3 Oct 06
Page 3
SGB15N60HS
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Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
=25°C,
T
j
=400V,IC=15A,
V
CC
V
=0/15V,
GE
R
=23Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 13
ns
- 14
- 209
- 15
- 0.32
mJ
- 0.21
- 0.53
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=150 °C
j
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
V
=400V,IC=15A,
CC
=0/15V,
V
GE
R
= 3.6Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=150°C
T
j
V
=400V,IC=15A,
CC
V
=0/15V,
GE
R
= 23Ω
G
1)
L
=60nH,
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 11
- 6
- 72
- 26
- 0.38
- 0.20
- 0.58
- 12
- 15
- 235
- 17
- 0.48
- 0.30
- 0.78
ns
mJ
ns
mJ
1)
Leakage inductance L
an d Stray capacity Cσ due to test circuit in Figure E.
σ
Power Semiconductors
3 Rev 2.3 Oct 06
Page 4
SGB15N60HS
^
tP=5µs
0A
0A
0A
0A
0A
, COLLECTOR CURRENT
C
I
10A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
TC=80°C
TC=110°C
I
c
I
c
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
Figure 2. Safe operating area
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
= 0/+15V, RG = 23Ω)
V
GE
8µs
15µs
50µs
200µs
1ms
DC
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
(D = 0, T
T
≤150°C;VGE=15V)
j
= 25°C,
C
140W
120W
100W
80W
60W
, POWER DISSIPATION
tot
40W
P
20W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
case temperature
≤ 150°C)
(T
j
20A
10A
, COLLECTOR CURRENT
C
I
0A
25°C 75°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
≤ 15V, Tj ≤ 150°C)
(V
GE
Power Semiconductors
4 Rev 2.3 Oct 06
Page 5
r
SGB15N60HS
^
0A
VGE=20V
15V
0A
0A
, COLLECTOR CURRENT
C
I
10A
0A
0V 2V 4V 6V
13V
11V
9V
7V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
= 25°C)
j
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
Figure 6. Typical output characteristic
VGE=20V
15V
13V
11V
9V
7V
5V
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
(T
= 150°C)
j
TJ=-55°C
0A
20A
, COLLECTOR CURRENT
C
I
0A
0V 2V 4V 6V 8V
, GATE-EMITTER VOLTAGE
V
GE
25°C
150°C
Figure 7. Typical transfer characteristic
(V
=10V)
CE
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
COLLECTOR-EMITT SATURATION VOLTAGE
1,5V
CE(sat),
1,0V
V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collecto
saturation voltage as a function of
junction temperature
(V
= 15V)
GE
IC=30A
IC=15A
IC=7.5A
-emitter
Power Semiconductors
5 Rev 2.3 Oct 06
Page 6
SGB15N60HS
^
t
d(off)
100ns
t
f
t
10ns
t, SWITCHING TIMES
d(on)
t
r
t, SWITCHING TIMES
100 ns
10 ns
t
d(off)
t
t
d(on)
t
f
r
1ns
0A 10A 20A
Figure 9. Typical switching times as a
IC, COLLECTOR CURRENT
Figure 10. Typical switching times as a
function of collector current
(inductive load, T
V
=400V, VGE=0/15V, RG=23Ω,
CE
=150°C,
J
Dynamic test circuit in Figure E)
t
d(off)
5,0V
4,5V
100ns
4,0V
3,5V
3,0V
t, SWITCHING TIMES
2,5V
GATE-EMITT TRSHOLD VOLTAGE
t
10ns
t
t
f
r
d(on)
GE(th),
2,0V
V
1,5V
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
function of junction temperature
(inductive load, V
V
=0/15V, IC=15A, RG=23Ω,
GE
=400V,
CE
Dynamic test circuit in Figure E)
1 ns
0Ω 10Ω 20Ω 30Ω 40Ω
RG, GATE RESISTOR
function of gate resistor
(inductive load, T
V
=400V, VGE=0/15V, IC=15A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
a function of junction temperature
= 0.5mA)
(I
C
max.
typ.
min.
Power Semiconductors
6 Rev 2.3 Oct 06
Page 7
0
0
30
s
τ
τ
SGB15N60HS
^
*) Eon include losses
due to diode recovery
,0mJ
1,0mJ
E, SWITCHING ENERGY LOSSES
,0mJ
0A 10A 20A 30A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
=400V, VGE=0/15V, RG=23Ω,
CE
=150°C,
J
Dynamic test circuit in Figure E)
Ets*
Eon*
E
*) Eon include losses
due to diode recovery
Ets*
1,0 mJ
Eon*
0,5 mJ
off
E, SWITCHING ENERGY LOSSES
0,0 mJ
Ω1
Ω20Ω
RG, GATE RESISTOR
Ω40Ω
E
off
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
=400V, VGE=0/15V, IC=15A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
*) Eon include losses
due to diode recovery
.75mJ
.50mJ
.25mJ
E, SWITCHING ENERGY LOSSES
.00mJ
Ets*
Eon*
E
off
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 15. Typical switching energy losses
0
10
-1
10
-2
10
-3
10
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10-4K/W
Figure 16. IGBT transient thermal resistance
as a function of junction
temperature
(inductive load, V
V
=0/15V, IC=20A, RG=23Ω,
GE
=400V,
CE
Dynamic test circuit in Figure E)
K/W
D=0.5
0.2
0.1
K/W
0.05
0.02
K/W
0.01
K/W
single pulse
1µs 10µs 100µs 1m s 10ms 100ms 1
R ,(1/W)
0.5321 0.04968
0.2047 2.58*10
0.1304 2.54*10-4
0.0027 3.06*10-4
R
1
C1=
1/R1
C2=
τ
, (s)
2/R2
-3
R
2
tP, PULSE WIDTH
/ T)
(D = t
p
Power Semiconductors
7 Rev 2.3 Oct 06
Page 8
SGB15N60HS
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15V
10V
120V
480V
100pF
c, CAPACITANCE
, GATE-EMITTER VOLTAGE
5V
GE
V
0V
0nC 20nC 40nC 60nC 80nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(I
=15 A)
C
10pF
Figure 18. Typical capacitance as a function
1nF
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
C
iss
C
oss
C
rss
15µs
10µs
5µs
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
10V 11V 12V 13V 14V
, GATE-EMITETR VOLTAGE
V
GE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
=600V, start at TJ=25°C)
CE
250A
200A
150A
100A
, short circuit COLLECTOR CURRENT
50A
C(sc)
I
0A
10V 12V 14V 16V 18V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
≤ 400V, Tj ≤ 150°C)
(V
CE
Power Semiconductors
8 Rev 2.3 Oct 06
Page 9
SGB15N60HS
^
PG-TO263-3-2
Power Semiconductors
9 Rev 2.3 Oct 06
Page 10
τ
τ
τ
SGB15N60HS
^
i,v
+
di /dt
F
I
F
t=t t
rr S F
Q=Q Q
rr S F
t
rr
t
S
+
t
F
Figure A. Definition of switching times
Q
I
rrm
S
Q
90% I
10% I
F
di /dt
rr
rrm
rrm
t
V
R
Figure C. Definition of diodes
switching characteristics
p(t)
1
rrrr
1
T(t)
j
12 n
2
2
n
n
rr
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
σ
an d Stray capacity Cσ =40pF.
Published by
Power Semiconductors
10 Rev 2.3 Oct 06
Page 11
SGB15N60HS
^
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 12/7/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
11 Rev 2.3 Oct 06
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