Datasheet SGA-9289 Datasheet (Stanford Microdevices)

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

Abstract

Stanford Microdevices’ SGA-9289 is a high
performance SiGe amplifier designed for operation
from DC to 3500 MHz. The amplifier is manufactured
using the latest Silicon Germanium Heterostructure
Bipolar Transistor (SiGe HBT) process. The process
has a V

=8V and an fT=25 GHz. The SiGe HBT

BCEO

process makes the SGA-9289 a very cost-effective
solution for applications requiring high linearity at
moderate biasing levels. This application note
illustrates several application circuits for key frequency
bands in the 800-2500 MHz spectrum.

Introduction

The application circuits were designed to achieve the
optimum combination of P

and OIP3 while

1dB

maintaining flat gain and reasonable return losses.
Special consideration was given to insure amplifier
stability at low frequencies where the device exhibits
high gain. These designs were created to illustrate the
general performance capabilities of the device under
CW conditions. Users may wish to modify these
designs to achieve optimum performance under
specific input conditions and system requirements.

SGA-9289

Silicon Germanium HBT Amplifier

Product Features

• DC-3500 MHz Operation

• High Output IP3, +41.5 dBm Typical at 1.96 GHz

• 11.0 dB Gain Typical at 1.96 GHz

• 28.6 dBm P1dB Typical at 1.96 GHz

• Cost Effective

Applications

• Wireless Infrastructure Driver Amplifiers

• CA TV Amplifiers

• Wireless Data, WLL Amplifiers

The circuits contain only surface mountable devices
and were designed with automated manufacturing
requirements in mind. All recommended components
are standard values available from multiple
manufacturers. The components specified in the bill of
materials (BOM) have known parasitics, which in some
cases are critical to the circuit’s performance.
Deviating from the recommended BOM may result in a
performance shift due to varying parasitics – primarily
in the inductors and capacitors.

Biasing Techniques

These SiGe HBT amplifiers exhibit a “soft” breakdown
effect (V

=7.5V minimum) which allows for large

BCEO

signal operation at VCE=5V. The user should insure
that under large signal conditions the source and load
impedances presented to the device don’t result in
excessive collector currents near breakdown. Small
signal operation with VCE<7V is acceptable.

Absolute Maximum Ratings

retemaraPlobmySeulaVtinU

tnerruCesaBI

tnerruCrotcelloCI

egatloVrettimE-rotcelloCV

egatloVesaB-rotcelloCV

egatloVesaB-rettimEV

erutarepmeTgnitarepOT

egnaRerutarepmeTegarotST

erutarepmeTnoitcnuJgnitarepOT

B

C

OEC

OBC

OBE

PO

rots

J

02Am

004Am

0.7V

81V

8.4V
58+ot04-C

051+ot04-C

051+C

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no
responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in
life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

1

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

All HBT amplifiers are subject to device current
variation due to the decreasing nature of the internal
VBE with increasing temperature. In the absence of an
active bias circuit or resistive feedback, the decreasing
V

will result in increased base and collector

BE

currents. As the collector current continues to increase
under constant VCE conditions the device may
eventually exceed its maximum dissipated power limit
resulting in permanent device damage. The designs
included in this application note contain passive bias
circuits that stabilize the device current over
temperature and desensitize the circuit to device
process variation.

The passive bias circuits used in these designs include
a dropping resistor in the collector bias line and a
voltage divider from collector-to-base. Using this
scheme the amplifier can be biased from a single
supply voltage. The collector-dropping resistor is sized
to drop 2-3V depending on the desired VCE . The
voltage divider from collector-to-base, in conjunction
with the dropping resistor, will stabilize the device
current over temperature. Configuring the voltage
divider such that the shunt current is 5-10 times larger
than the desired base current desensitizes the circuit
to device process variation. These two feedback
mechanisms are sufficient to insure consistent
performance over temperature and device process
variations. Note that the voltage drop is clearly
dependent on the nominal collector current and can be
adjusted to generate the desired VCE from a fixed
supply rail. The user should test the circuit over the
operational extremes to guarantee adequate
performance if the feedback mechanisms are reduced.

An active bias circuit can be implemented if the user
does not wish to sacrifice the voltage required by the
aforementioned passive circuit. There are various
active bias schemes suitable for HBTs. The user
should choose an active bias circuit that best meets
his cost, complexity and performance requirements.

Circuit Details

SMDI will provide the detailed layout (AutoCad format)
to users wishing to use the exact same layout and
PCB material shown in the following circuits. The
circuits recommended within this application note were
designed using the following PCB stack up:

Material: GETEKä ML200C
Core thickness: 0.031”
Copper cladding: 1oz both sides
Dielectric constant: 4.1
Dielectric loss tangent: 0.0089 (@ 1 GHz)

Customers not wishing to use the exact material and
layouts shown in this application note can design their
own PCB using the critical transmission line
impedances and phase lengths shown in the BOMs
and layouts.

Vcc

+

V

DROP

-

I

c

+

V

CE

-

I

SHUNT

I

B

Passive Bias Circuit Topology

2

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

870-960 MHz Application Circuit (VCE=3V, Icq=315mA, 25°C)

R4

Vs=+5V

R5

R2

RFin RFout

C3

R1

C4

C1

C2

L1

L2

C5

R3

SGA-9289

L3

C7 C8

C6

C9

C10

SGA-9289, Vce=3V, 870-960 MHz Apps Circuit

STANFORD MICRODEVICES

SOT-89 Ev al Board

ECB-100608-B

.seDfeReulaVrebmuNtraP

01,1CFp86seires81HCMmhoR

2CFp9.3seires81HCMmhoR

7,3CFu1.seires81HCMmhoR

6,4CFp93seires81HCMmhoR
5CFp01seires81HCMmhoR
8CFp0001seires81HCMmhoR
9CFp8.6seires81HCMmhoR

1LHn8.6seires-8061LLOKOT

3,2LHn28seires-8061LLOKOT
1Rsmho01seires81HCMmhoR
2Rsmho65seires81HCMmhoR
3Rsmho051seires81HCMmhoR

5,4Rsmho21TTAW1gkp2152

C1

Z1

.seD.feReulaV

1ZzHM519@.ged91,smhO05
2ZzHM519@.ged6,smhO05
3ZzHM519@.ged3.9,smhO05
4ZzHM519@.ged4.1,smhO05
5ZzHM519@.ged3.5,smhO05
6ZzHM519@.ged1.41,smhO05
7ZzHM519@.ged7.12,smhO05
8ZzHM519@.ged1.22,smhO05

R4

R3

C3

R1

R2

C6

C4

C2

Z2 Z3

L1

L2

Z4

SGA-9289

Z6

Z5

C5

R5

C7

L3

Z7

+5 V

C8

C10

Z8

C9

3

EAN-101535 Rev A

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

Typical Performance - 870-960 MHz Application Circuit (VCE=3V, ICQ=315mA, 25°C)

20
18

Gain

16
14

Gain (dB)

12

Isolation

10

0.8 0.85 0.9 0.95 1

Frequency (GHz)

S-Parameters vs Frequency

S-Parameters vs Frequency

0

-5

-10

ORL

-15

-20

-25

IRL, ORL (dB)

IRL

-30

-35

0.8 0.85 0.9 0.95 1

Frequency (GHz)

0

Isolation (dB)

-6

-12

-18

-24

-30

P1dB, OIP3 vs Frequency

27.5

26.5

25.5

P1dB

24.5

P1dB (dBm)

23.5

OIP3 @ 10 dBm/tone

22.5

0.87 0.90 0.93 0.96

Frequency (GHz)

Pout, Gain, Ic vs Pin

30
25

Pout

20
15

Gain

10

Pout (dBm), Gain (dB)

5

Ic

0 4 8 12 16

Pin (dBm)

42
41

OIP3 (dBm)

40
39
38
37

350
340

Ic (mA)

330
320
310
300

OIP3 vs Tone Level

41
40
39
38

OIP3 (dBm)

37
36

6 8 10 12 14 16

Pout / Tone (dBm)

qerF

)zHG(

088.06.527.833.717.52-9.7-5.2

519.05.526.830.717.92-7.8-5.2

549.04.526.838.610.33-6.9-6.2

Bd1P

)mBd(

Noise Figure vs Frequency

5
4
3
2
1

Noise Figure (dB)

0

0.87 0.90 0.93 0.96

Frequency (GHz)

3PIO

)mBd(

niaG

)Bd(

11S

)Bd(

22S

)Bd(

FN

)Bd(

4

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

870-960 MHz Application Circuit (VCE=5V, Icq=340mA, 25°C)

R4

Vs=+8V

R5

R2

R3

C7 C8

R6

RFin RFout

C1

C3

R1

C4

L2

C2

L1

C5

SGA-9289

C6

L3

C10

C9

SGA-9289, Vce=5V, 870-960 MHz Apps Circuit

STANFORD MICRODEVICES

SOT-89 Ev al Board

ECB-100608-B

.seDfeReulaVrebmuNtraP

01,1CFp86seires81HCMmhoR
9,2CFp9.3seires81HCMmhoR
7,3CFu1.seires81HCMmhoR
6,4CFp93seires81HCMmhoR

5CFp01seires81HCMmhoR
8CFp0001seires81HCMmhoR

1LHn01TN28HF-8061LLOKOT

3,2LHn28TN28HF-8061LLOKOT
1Rsmho013060ezis
2Rsmho633060ezis
3Rsmho0223060ezis
4Rsmho61TTAW1gkp2152
5Rsmho81TTAW1gkp2152

C1

Z1

L1

.seD.feReulaV

1ZzHM519@.ged6.31,smhO05
2ZzHM519@.ged5.3,smhO05
3ZzHM519@.ged4.3,smhO05
4ZzHM519@.ged7.6,smhO05
5ZzHM519@.ged6.6,smhO05
6ZzHM519@.ged5.32,smhO05
7ZzHM519@.ged5.4,smhO05

R4

R2

R1

C3

C4

C2

Z2

Z3

R6

L2

Z4

C5

R3

C6

SGA-9289

Z5

R5

L3

Z6

Z7

C9

+ 8 V

C8C7

C10

5

EAN-101535 Rev A

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

Typical Performance - 870-960 MHz Application Circuit (VCE=5V, ICQ=340mA, 25°C)

20

Gain

18
16
14

Gain (dB)

Isolation

12
10

0.8 0.85 0.9 0.95 1

Frequency (GHz)

S-Parameters vs Frequency

S-Parameters vs Frequency

0

-5

-10

ORL

-15

-20

-25

IRL, ORL (dB)

-30

-35

0.8 0.85 0.9 0.95 1

Frequency (GHz)

IRL

0

-6

Isolation (dB)

-12

-18

-24

-30

P1dB, OIP3 vs Frequency

30
29

P1dB

28
27

P1dB (dBm)

26

OIP3 @ 13 dBm/tone

25

0.87 0.9 0.93 0.96

Frequency (GHz)

Pout, Gain, Ic vs Pin

35
30
25

Pout

20
15

Gain

10

Pout (dBm), Gain (dB)

5

-1 2 5 8 11 14

Pin (dBm)

45
44

OIP3 (dBm)

43
42
41
40

370
360

Ic (mA)

350
340

Ic

330
320

OIP3 vs Tone Level

43
42
41
40

OIP3 (dBm)

39
38

6 8 10 12 14 16

Pout / Tone (dBm)

qerF

)zHG(

088.02.924.142.816.71-4.61-8.2

519.02.923.149.718.52-1.51-9.2

549.00.929.047.712.52-3.41-9.2

Bd1P

5
4
3
2
1

Noise Figure (dB)

0

0.87 0.9 0.93 0.96

Frequency (GHz)

Noise Figure vs Frequency

)mBd(

3PIO

)mBd(

niaG

)Bd(

11S

)Bd(

22S

)Bd(

FN

)Bd(

6

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

1930-1990 MHz Application Circuit (VCE=3V, Icq=315mA, 25°C)

R4

R2

RFin RFout

C1

C2

R1

C3

L1

C4

R3

SGA-9289

L2

C5

Vs=+5V

C7 C8

C6

C9

SGA-9289, Vce=3V, 1930-1990 MHz Apps Circuit

STANFORD MICRODEVICES

SOT-89 Ev al Board

ECB-100608-B

.seDfeReulaVrebmuNtraP

1CFp5.1seires81HCMmhoR

7,2CFu1.0seires81HCMmhoR

9,6,3CFp21seires81HCMmhoR

5,4CFp2.2seires81HCMmhoR

8CFp0001seires81HCMmhoR

2,1LHn22seires-8061LLOKOT
1Rsmho01seires81HCMmhoR
2Rsmho65seires81HCMmhoR
3Rsmho051seires81HCMmhoR

5,4Rsmho21TTAW1gkp2152

C1

C3

Z1

C2 R1

.seD.feReulaV

1ZzHM0691@.ged7.7,smhO05
2ZzHM0691@.ged9.6,smhO05
3ZzHM0691@.ged2.7,smhO05
4ZzHM0691@.ged3.41,smhO05
5ZzHM0691@.ged8.34,smhO05

R4

R3

R2

C6

L1

Z2

C4

SGA-9289

Z4

Z3

R5

C7

L2

Z5

C5

+ 5 V

C8

C9

7

EAN-101535 Rev A

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

Typical Performance - 1930-1990 MHz Application Circuit (VCE=3V, ICQ=315mA, 25°C)

15
13
11

9

Gain (dB)

Gain

Isolation

7
5

1.8 1.9 2. 0 2. 1

Frequency (GHz)

S-Parameters vs Frequency

S-Parameters vs Frequency

0

-5

-10

IRL

-15

-20

ORL

-25

IRL, ORL (dB)

-30

-35

1.8 1.9 2.0 2.1

Frequency (GHz)

0

Isolation (dB)

-6

-12

-18

-24

-30

P1dB, OIP3 vs Frequency

26.5

25.5

P1dB

24.5

23.5

OIP3 @ 10 dBm/tone

P1dB (dBm)

22.5

21.5

1.93 1.95 1.97 1.99

Frequency (GHz)

Pout, Gain, Ic vs Pin

30
25

Pout

20

Ic

15
10

Pout (dBm), Gain (dB)

5

Gain

0 5 10 15 20

Pin (dBm)

42
41

OIP3 (dBm)

40
39
38
37

340
330

Ic (mA)

320
310
300
290

OIP3 vs Tone Level

41
40
39
38

OIP3 (dBm)

37
36

6 8 10 12 14 16

Pout / Tone (dBm)

qerF

)zHG(

39.19.523.931.119.61-7.51-8.2

69.10.623.930.115.02-5.51-9.2

99.10.624.839.014.72-9.51-9.2

Bd1P

)mBd(

Noise Figure vs Frequency

5
4
3
2
1

Noise Figure (dB)

0

1.93 1.95 1.97 1.99

Frequency (GHz)

3PIO

)mBd(

niaG

)Bd(

11S

)Bd(

22S

)Bd(

FN

)Bd(

8

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

1930-1990 MHz Application Circuit (VCE=5V, Icq=340mA, 25°C)

C5

C7

Vs=+8V

C8

C9

R5

R3

R2

RFin RFout

C1

C3

R1

L1

C2

SGA-9289

C4

R4

L2

C6

SGA-9289, Vce=5V, 1930-1990 MHz Apps Circuit

STANFORD MICRODEVICES

SOT-89 Ev al Board

ECB-100608-B

.seDfeReulaVrebmuNtraP

9,5,3,1CFp21seires81HCMmhoR

7,2CFu1.0seires81HCMmhoR
4CFp7.2seires81HCMmhoR
6CFp8.1seires81HCMmhoR
8CFp0001seires81HCMmhoR

2,1LHn22seires8061LLOKOT
1Rsmho01seires81HCMmhoR
2Rsmho15seires81HCMmhoR
3Rsmho61seires81HCMmhoR
4Rsmho042seires81HCMmhoR
5Rsmho61TTAW1gkp2152
6Rsmho81TTAW1gkp2152

C1

C3

Z1

C2 R1

.seD.feReulaV

1ZzHM0691@.ged1.74,smhO05
2ZzHM0691@.ged7,smhO05
3ZzHM0691@.ged2.7,smhO05
4ZzHM0691@.ged3.41,smhO05
5ZzHM0691@.ged8.4,smhO05
6ZzHM0691@.ged2.24,smhO05

R3

L1

Z2

C4

R5

R4

R2

C5

SGA-9289

Z4

Z3

R6

C7

L2

Z5

Z6

C6

+ 8 V

C8

C9

9

EAN-101535 Rev A

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

Typical Performance - 1930-1990 MHz Application Circuit (VCE=5V, ICQ=340mA, 25°C)

15
13
11

9

Gain (dB)

Gain

Isolation

7
5

1.8 1.85 1.9 1.95 2 2.05 2.1

Frequency (GHz)

S-Parameters vs Frequency

S-Parameters vs Frequency

0

-5

-10

IRL

-15

-20

IRL, ORL (dB)

-25

-30

1.8 1.85 1.9 1.95 2 2.05 2.1

Frequency (GHz)

ORL

0

Isolation (dB)

-6

-12

-18

-24

-30

P1dB, OIP3 vs Frequency

30
29

P1dB

28
27

P1dB (dBm)

26

OIP3 @ 13 dBm/tone

25

1.93 1.95 1.97 1.99

Frequency (GHz)

Pout, Gain, Ic vs Pin

35
29

Pout

23
17

Ic

11

Pout (dBm), Gain (dB)

5

Gain

8 10121416182022

Pin (dBm)

44
43

OIP3 (dBm)

42
41
40
39

370
360

Ic (mA)

350
340
330
320

OIP3 vs Tone Level

45
43
41
39

OIP3 (dBm)

37
35

8 101214161820

Pout / Tone (dBm)

qerF

)zHG(

39.15.823.141.111.41-8.91-0.4

69.15.824.149.011.51-5.91-1.4

99.17.824.147.019.41-1.91-3.4

Bd1P

)mBd(

Noise Figure vs Frequency

6
5
4
3
2

Noise Figure (dB)

1

1.93 1.95 1.97 1.99

Frequency (GHz)

3PIO

)mBd(

niaG

)Bd(

11S

)Bd(

22S

)Bd(

FN

)Bd(

10

http://www.stanfordmicro.comPhone: (800) SMI-MMIC522 Almanor Ave., Sunnyvale, CA 94085

EAN-101535 Rev A