Datasheet SGA-8343 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SGA-8343 is a high performance SiGe
HBT amplifier designed for operation from DC to 6 GHz. This RF
device uses the latest Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-8343 is optimized
for 3V operation but can be biased at 2V for low-voltage battery
operated systems. The device is easily matched as Γ
very close to 50 ohms. This device provides high gain, low NF,
and excellent linearity at a low cost.

Typical Gain Performance

40

35
30

25

F

MIN

20

15
10

Gain, Gmax (dB)

Gain

Gmax

5
0

012345678

Frequency (GHz)

OPT

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3
0

is

Preliminary

SGA-8343

Low Noise, High Gain SiGe HBT

Product Features

• 6 GHz Useful Bandwidth

• Low F

• High Gain (Gmax): 24 dB @ 0.9 GHz

F

MIN

• Easily Matched with

(dB)

• OIP3 = +28.5 dBm, P1dB = +13 dBm

• Low Cost High Performance SiGe HBT

Applications

• LNA for Wireless Infrastructure

• Fixed Wireless Infrastructure

• Wireless Data

• Driver Stage for Low Power Applications

• Oscillators

: 0.9 dB @ 0.9 GHz

MIN

1.1 dB @ 1.9 GHz

19 dB @ 1.9 GHz

|Γ|Γ

|Γ

| = 0.17 @ 1.9 GHz

|Γ|Γ

OPT

Preliminary

lobmyS

G

XAM

S

12

F

nim

Bd1P

PIO

3

h

EF

VB

OEC

I,V3=

V

EC

QC

ZSZ=SZ,*LZ=L*

ZSZ=L05= Ω

ZS=Γ

TPOZ,LZ=TPOL

Z

SZ=TPOSZ,LZ=TPOL

ZSZ=

TPOSZ,LZ=TPOL

niaGelbaliavAmumixaM

niaGnoitresnI

erugiFesioNmuminiM

niaGtnerruCCD 021081003

Cº52=T,scitsiretcarahCeciveD

)detonesiwrehtosselnu(Am01=

stinU .niM .pyT .xaM

zHG9.0=f
zHG9.1=f

Bd

zHG4.2=f

zHG9.0=f
zHG9.1=f

Bd

zHG4.2=f

zHG9.0=f
zHG9.1=f

Bd

zHG4.2=f

V

I,V2=

tniopnoisserpmocBd1tuptuO

tnioPtpecretnIredrOdrihTtuptuO

EC

V

EC

V

EC

V

EC

Am02=

QC

I,V3=

Am02=

QC

I,V2=

Am02=

QC

I,V3=

Am02=

QC

mBd

mBd

egatloVnwodkaerBrettimE-rotcelloCV7.50.6

9.32

3.91

7.71

8.12

3.61

3.41

9.0

1.1

2.1

0.01

3.31

0.42

5.82

htR)daelotnoitcnuj(ecnatsiseRlamrehT W/Cº002

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

1

http://www.stanfordmicro.com

EDS-101845 Rev. A

Typical Performance - Deembedded S-Parameters

Preliminary

SGA-8343 Low Noise SiGe HBT

Gain vs Frequency (3V,10mA)

40

35
30

25
20

15
10

Gain, Gmax (dB)

5
0

012345678

Isolation

Gmax

Gain

0

-5

Isolation (dB)

-10

-15

-20

-25

-30

-35

-40

40

35
30

25
20

15
10

Gain, Gmax (dB)

Gain vs Frequency (2V,10mA)

Isolation

Gmax

5
0

012345678

Gain

0

-5

Isolation (dB)

-10

-15

-20

-25

-30

-35

-40

Frequency (GHz) Frequency (GHz)

S11,S22 vs Frequency (3V,10mA)

0.5

0.2

0.0 0.2 0.5 1.0 2.0 5.0

0.2

4 GHz

3 GHz

2 GHz

0.5

1.0

2.0

8 GHz

6 GHz

5.0

inf

S22

5.0

1 GHz

S11

2.0

1.0

Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The data represents typical performace of the device. De­embedded s-parameters can be downloaded from our website (www.stanfordmicro.com).

S11,S22 vs Frequency (2V,10mA)

0.5

0.2

0.0 0.2 0.5 1.0 2.0 5.0

0.2

4 GHz

3 GHz

2 GHz

0.5

1.0

2.0

8 GHz

6 GHz

S22

1 GHz

S11

2.0

1.0

5.0

inf

5.0

Typical Performance - P1dB, OIP3, Gain

qerF

)zHM(

009

0091

0042

V

EC

)V(

2

3

2

3

2

3

I

QC

)Am(

010.010.220.5205.0 ∠∠∠∠∠ 3.341

022.010.420.4242.0 ∠∠∠∠∠ 6.61

010.315.424.4263.0 ∠∠∠∠∠ 2.61

023.310.824.4263.0 ∠∠∠∠∠ 2.61

010.010.327.6134.0 ∠∠∠∠∠ 2.19

022.010.624.6123.0 ∠∠∠∠∠ 1.42

010.310.620.8145.0 ∠∠∠∠∠ 2.51

023.315.820.8183.0 ∠∠∠∠∠ 0.41

010.010.320.5113.0 ∠∠∠∠∠ 0.54

022.010.420.5192.0 ∠∠∠∠∠ 3.33

010.315.723.5144.0 ∠∠∠∠∠ 2.9

023.310.923.5163.0 ∠∠∠∠∠ 3.31

Bd1P

)mBd(

3PIO

)mBd(

niaG

)Bd(

Z

gaM ∠∠∠∠∠ gnA

TPOL

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

2

http://www.stanfordmicro.com

EDS-101845 Rev. A

Typical Performance - Noise Parameters

Preliminary

SGA-8343 Low Noise SiGe HBT

Noise Figure (3V, 10mA)

2.4

2

1.6

(dB)

1.2

MIN

F

0.8

0.4

0

01234567

F

MIN

G

AS

Frequency (GHz)

Noise Parameters - VCE=3V, IC=10mA

qerF

)zHM(

9.049.001.0 ∠ 5511.08.3288.32

9.11.171.0 ∠ 52101.05.7133.91

4.281.132.0 ∠ 75190.04.5166.71

372.132.0 ∠ 97190.02.3110.51

45.192.0 ∠ 051-21.00.1149.11

537.124.0 ∠ 221-81.05.948.9

620.255.0 ∠ 011-42.04.826.8

F

NIM

)Bd(

gaM ∠∠∠∠∠ gnA

30

25

20

15

10

5

0

G

AS

(dB)

tpOammaG

Gamma Opt (3V, 10mA)

0.5

0.2

0.0 0.2 0.5 1.0 2.0 5.0

0.2

r

n

2.4 GHz

3 GHz

4 GHz

5 GHz

0.5

G

1.9 GHz

6 GHz

SA

1.0

2.0

0.9 GHz

2.0

1.0

)Bd(

5.0

inf

5.0

xamG

)Bd(

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

3

http://www.stanfordmicro.com

EDS-101845 Rev. A

Absolute Maximum Ratings

retemaraPlobmySeulaVtinU

rotcelloCtnerruCI

tnerruCesaBI

egatloVrettimE-rotcelloCV

esaB-rotcelloCegatloVV

egatloVesaB-rettimEV

erutarepmeTgnitarepOT

egnaRerutarepmeTegarotST

noitapissiDrewoPP

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

C

B

ECO

OBC

OBE

PO

rots

SSID

erutarepmeTnoitcnuJgnitarepOT

J

27Am

1Am

5V

21V

5.4V

58+ot04-C

051+ot04-C

523Wm

051+C

Preliminary

SGA-8343 Low Noise SiGe HBT

Part Number Ordering Information

rebmuNtraPeziSleeRleeR/seciveD

3438-AGS"70003

Part Symbolization

The part will be symbolized with an “A83” and a
Pin 1 indicator on the top surface of the package.

Pin Description

#niPnoitcnuFnoitpircseD

1esaBtupnIFR

2rettimEdaelecuderotselohaivesU.dnuorgotnoitcennoC

3rotcelloCtuptuOFR

4rettimE2niPsaemaS

.elbissopsasdaelrettimeotesolcsasaivecalP.ecnatcudni

.079

Package Dimensions

.051±.002

.021

.025

.049

C

L

C

L

.014

.005 TYP(4X)

.012

TYP(3X)

A fully dimensioned package outline is available on our website.

.024

.035

.024

.091

.015 TYP(4X)

NOTE:

1. ALL DIMENSIONS ARE IN INCHES

2. DIMENSIONS ARE INCLUSIVE OF PLATING

3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH &

.038

METAL BURR

4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70 FOR
TRIM/FORM. ie: REVERSE TRIM/FORM

6. PACKAGE SURFACE TO BE MIRROR FINISH

4

1

3

2

Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

4

http://www.stanfordmicro.com

EDS-101845 Rev. A