Datasheet SGA-6589 Datasheet (Stanford Microdevices)

Page 1
Product Description
Stanford Microdevices SGA-6589 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz.
This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-6589 requires only DC blocking and bypass capacitors for external components.
Small Signal Gain vs. Frequency
30
25
dB
20
Preliminary
SGA-6589
DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block
Product Features
DC-4000 MHz OperationSingle Voltage Supply
High Output Intercept: +32.5dBm typ. at 850 MHzHigh Output Power : 21.5 dBm typ. at 850 MHzHigh Gain : 25.6 dB typ. at 850 MHz
15
10
012345
Frequency GHz
Applications
Oscillator AmplifiersFinal PA for Low Power ApplicationsIF/ RF Buffer AmplifierDrivers for CATV Amplifiers
lobmyS
Z
0
P
Bd1
PI
3
S
12
htdiwdnaBSybdenimreteD(
S
11
S
22
S
21
FNZ,erugiFesioN
V
D
l-j,htR)dael-noitcnuj(ecnatsiseRlamrehT
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
I,smhO05=
D
niaGlangiSllamS
11S,22
RWSVtupnIzHM0004-CD=f-1:06.1
RWSVtuptuOzHM0004-CD=f-1:08.1
noitalosIesreveR
S
egatloVeciveD V8.4
:snoitidnoCtseT:sretemaraP
o
52=T,Am08=
C
noisserpmoCBd1tarewoPtuptuO
tnioPtpecretnIredrOdrihT
mBd0=enotreptuorewoP
)seulaVzHM0004
smhO05=zHM0591=fBd9.2
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
zHM058=f
zHM0591=f zHM0042=f
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
stinU .niM .pyT .xaM
mBd mBd mBd
mBd mBd mBd
Bd Bd Bd
Bd Bd Bd
o
W/C79
5.12
0.91
8.71
5.23
6.13
3.03
6.52
5.02
8.81
7.82
3.42
9.22
Page 2
Absolute Maximum Ratings
Operation of this device above any one of these parameters may cause permanent damage.
Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l
Key parameters, at typical operating frequencies:
Preliminary
Preliminary
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
retemaraPeulaVtinU
tnerruCylppuS061Am
erutarepmeTgnitarepO58+ot04-C
rewoPtupnImumixaM01+mBd
egnaRerutarepmeTegarotS051+ot04-C
erutarepmeTnoitcnuJgnitarepO051+C
retemaraP
52oC tinU
I(
D
detonesiwrehtosselnu,Am08=)
zHM005
lacipyT noitidnoCtseT
niaG
erugiFesioN
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
4.72
5.2
1.23
6.12
8.31
9.92
Bd Bd
Z
S
mBd
smhO05=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd Bd Bd
zHM058
niaG
erugiFesioN
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
6.52
5.2
5.23
5.12
7.51
7.82
Bd Bd
Z
S
mBd
smhO05=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd Bd Bd
zHM0591
niaG
erugiFesioN
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
5.02
9.2
6.13
0.91
0.41
3.42
Bd Bd
Z
S
mBd
smhO05=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd Bd Bd
zHM0042
niaG
erugiFesioN
3PItuptuO
Bd1PtuptuO
ssoLnruteRtupnI
noitalosI
8.81
3.3
3.03
8.71
5.21
9.22
Bd Bd
Z
S
mBd
smhO05=
mBd0=enotreptuoP,zHM1=gnicapsenoT
mBd Bd Bd
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
2
Page 3
#niPnoitcnuF
1 NIFR
2 DNG
.elbissop
3 ccV/TUOFRebdluohssaiB.nipsaibdnatuptuoFR
4 DNG.2niPsaemaS
Application Schematic for Operation at 850 MHz
seulaVrotsiseRsaiBdednemmoceR
ylppuS
V6V5.7V9V21
)sV(egatloV
saibR
51331519
For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended.
)smhO(
50 ohm
microstrip
100pF
1uF
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
noitpircseDcitamehcSeciveD
nafoesuehtseriuqernipsihT.niptupniFR
.noitarepofoycneuqerf
.ecnatcudnidaelecuderotecnamrofrep
sasdaeldnuorgotesolcsasaivecalP
68pF
33nH
2
1
3
4
100pF
Preliminary
Preliminary
ehtrofnesohcroticapacgnikcolbCDlanretxe
tsebrofselohaivesU.dnuorgotnoitcennoC
seireslanretxenahguorhtnipsihtotdeilppus CDesuaceB.rotcudniekohcFRdnarotsiser gnikcolbCDa,nipsihtnotneserpsignisaib
snoitacilppatsomnidesuebdluohsroticapac
edisylppusehT.)citamehcsnoitacilppaees(
.dessapybllewebdluohskrowtensaibehtfo
Rbias
VS
50 ohm
microstrip
Application Schematic for Operation at 1950 MHz
50 ohm
microstrip
68pF
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
1uF
22pF
2
1
3
4
3
Rbias
22nH
68pF
50 ohm
microstrip
VS
Page 4
Preliminary
Preliminary
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
S21, ID =80mA, T=25C
30
25
dB
20
15
10
012345
Frequency GHz
S11, ID =80mA, T=25C S22, ID =80mA, T=25C
0
-5
dB
-10
-15
-20
012345
dB
dB
S12, ID =80mA, T=25C
-15
-20
-25
-30
-35
012345
Frequency GHz
0
-5
-10
-15
-20
012345
Frequency GHzFrequency GHz
S11, ID=80mA, Ta=25C
5 GHz
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
S22, I
=80mA, Ta=25C
D
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
5 GHz
4
Page 5
Preliminary
3
4
15
Preliminary
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
dB
dB
30
S21, ID =80mA, T=-40C S12, ID =80mA, T=-40C
25
20
15
10
012
0
-5
-10
-15
-20
012345
Frequency GHz Frequency GHz
S11, ID =80mA, T=-40C S22, ID =80mA, T=-40C
Frequency GHz Frequency GHz
-
-20
dB
-25
-30
-35
5
012345
0
-5
dB
-10
-15
012345
S22, I
S11, ID=80mA, Ta=-40C
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
5 GHz
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
5
=80mA, Ta=-40C
D
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
5 GHz
Page 6
30
01234
0
5
0
345
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
S21, ID =80mA, T=85C S12, ID =80mA, T=85C
-1
Preliminary
Preliminary
dB
dB
25
20
15
10
Frequency GHz
S11, ID =80mA, T=85C
-5
-10
-15
-20
012345
Frequency GHz
S11, ID=80mA, Ta=85C
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
-20
dB
-25
-30
-35
5
12
Frequency GHz
S22, ID =80mA, T=85C
0
-5
-10
dB
-15
-20
-25
012345
Frequency GHz
S22, I
=80mA, Ta=85C
D
Freq. Min = 0.1 GHz
Freq. Max = 5.0 GHz
5 GHz
5 GHz
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
6
Page 7
Preliminary
Preliminary
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
Appropriate precautions in handling, packaging and testing devices must be observed.
Package Dimensions
Outline Drawing
1
A65
2
3
4
Part Number Ordering InformationCaution: ESD Sensitive
rebmuNtraPeziSleeRleeR/seciveD
9856-AGS"310003
Part Symbolization
The part will be symbolized with an A65 designator
on the top surface of the package.
PCB Pad Layout
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
7
Page 8
For 89 Outline
SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier
Component Tape and Reel Packaging
Tape Dimensions
Preliminary
Preliminary
ytivaChtgneL
noitarofrePretemaiD
epaTrevoChtdiW
epaTreirraChtdiW
ecnatsiDnoitarofrePotytivaC
noitpircseDlobmyS
htdiW
htpeD
hctiP
retemaiDeloHmottoB
hctiP
noitisoP
ssenkcihTepaT
ssenkcihT
)noitceriDhtdiW(
noitarofrePotytivaC
)noitceriDhtgneL(
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
8
P D
D P
W
P
eziS
)mm( leel
A B K
1
1
0
0
E
C
t
10.0-/+19.4
10.0-/+25.4
10.0-/+09.1
10.0-/+00.8
01.0-/+06.1
50.0-/+55.1
10.0-/+00.4
10.0-/+57.1
52.0-/+01.9
10.0-/+50.0
30.0-/+0.21
T
F
2
50.0-/+03.0
01.0-/+05.5
01.0-/+00.2
Loading...