Datasheet SGA-6289 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices SGA-6289 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 75mA , the SGA-6289 typically provides +34.4 dBm output
IP3, 13.7 dB of gain, and +18.1 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.

Gain & Return Loss vs. Freq. @TL=+25°C

15

13

11

IRL

9

Gain (dB)

7

5

012345

GAIN

ORL

Frequency (GHz)

0

-6

-12

-18

-24

-30

-36

SGA-6289

DC-4500 MHz, Cascadable
SiGe HBT MMIC Amplifier

Product Features

 High Gain : 12.6 dB at 1950 MHz
 Cascadable 50 Ohm
 Patented SiGe Technology
 Operates From Single Supply
 Low Thermal Resistance Package

Applications

Return Loss (dB)

 Cellular, PCS, CDPD
 Wireless Data, SONET

 Satellite

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6.21

2.21

1.81

6.71

4.43

7.13

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Test Conditions:

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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VS = 8 V ID = 75 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R

= 51 Ohms TL = 25ºC ZS = ZL = 50 Ohms

BIAS

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

1

EDS-100619 Rev C

1.51

Preliminary

SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier

Typical RF Performance at Key Operating Frequencies

Frequency (MHz)

Frequency (MHz)

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VS = 8 V ID = 75 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Test Conditions:

Test Conditions:

VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm

R

= 51 Ohms TL = 25ºC ZS = ZL = 50 Ohms

R

= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms

BIAS

BIAS

Frequency (MHz)

Noise Figure vs. Frequency

VD= 4.0 V, ID= 75 mA

7.0

6.0

5.0

4.0

TL=+25ºC

Noise Figure (dB)

3.0

2.0
012345

Frequency (GHz)

OIP3 vs. Frequency

VD= 4.0 V, ID= 75 mA

40

36

32

(dBm)

3

28

OIP

24

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)

+25°C

T

-40°C

L

+85°C

Absolute Maximum Ratings

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Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R

20

18

16

(dBm)

1dB

14

P

12

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

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1dB

VD= 4.0 V, ID= 75 mA

Frequency (G Hz )

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+25°C

-40°C
+85°C

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

2

EDS-100619 Rev C

Preliminary

SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier

S21 vs. Frequency

20

16

12

(dB)

21

S

8

4

012345

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

+25°C

-40°C

T

L

+85°C

S12 vs. Frequency

-13

-15

-17

(dB)

12

-19

S

-21

-23
012345

VD= 4.0 V, ID= 75 mA

T

Frequency (GHz)

+25°C

-40°C

L

+85°C

S11 vs. Frequency

-5

-10

-15

(dB)

11

-20

S

-25

-30
012345

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

+25°C

T

-40°C

L

+85°C

S22 vs. Frequency

-5

-10

-15

-20

(dB)

22

S

-25

-30

-35
012345

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

+25°C

T

-40°C

L

+85°C

VD vs. ID over Temperature for fixed

90.0

VS= 8V , R

= 51 Ohms *

BIAS

85.0

+85°C

+25°C

(mA)

D

I

80.0

75.0

70.0

65.0

60.0

3.60 3.80 4.00 4.20 4.40

VD(Volts)

* Note: In the applications circuit on page 4, R

VD vs. Temperature for Constant ID = 75 mA

4.50

4.35

4.20

4.05

(Volts)

-40°C

compensates for voltage and current variation over temperature.

BIAS

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

D

V

3.90

3.75

3.60

-40 -15 10 35 60 85

3

Temperature (°C)

EDS-100619 Rev C

SGA-6289 Basic Application Circuit

Preliminary

SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier

V

S

RF in

R

BIAS

1000

1 uF

pF

C

D

L

C

Application Circuit Element Values

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C

B

C

D

L

C

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1

C

B

C

B

SGA-6289

2

A62

3

C

V

S

R

BIAS

L

C

B

1 uF

1000 pF

C

D

C

B

RF out

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Mounting Instructions

1. Solder the copper pad on the backside of the

device package to the ground plane.

2. Use a large ground pad area with many plated

through-holes as shown.

3. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

Part Identification Marking

The part will be marked with an A62 designator on
the top surface of the package.

4

A62

2

1

123

For package dimensions, refer to outline drawing at

www.stanfordmicro.com

Caution: ESD sensitive

Appropriate precautions in handling, packaging
and testing devices must be observed.

3

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

4

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Part Number Ordering Information

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EDS-100619 Rev C