Datasheet SGA-6286 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices SGA-6286 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 75mA , the SGA-6286 typically provides +35 dBm output
IP3, 13.8 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.

Gain & Return Loss vs. Freq. @TL=+25°C

20
16

12

8

Gain (dB)

4
0

0.00 1.00 2.00 3.00 4.00 5.00 6.00

GAIN

Frequency (GHz)

ORL

IRL

0

-8

-16

-24

-32

-40

lobmyS retemaraP stinU ycneuqerF .niM .pyT .xaM

GniaGlangiSllamS

P

Bd1

PIO

3

htdiwdnaB

)mBd0=enotreptuorewoP(

noisserpmoCBd1tarewoPtuptuO

tnioPtpecretnIredrOdrihTtuptuO

LRIssoLnruteRtupnIBdzHM05916.41

SGA-6286

DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier

Product Features

 High Gain : 12.4 dB at 1950 MHz
 Cascadable 50 Ohm
 Patented SiGe Technology
 Operates From Single Supply
 Low Thermal Resistance Package

Applications

Return Loss (dB)

 Cellular, PCS, CDPD
 Wireless Data, SONET

 Satellite

Bd
Bd
Bd

mBd
mBd

mBd
mBd

)Bd01-<(ssoLnruteRybdenimreteDzHM0055

zHM058

zHM0591
zHM0042

zHM058

zHM0591

zHM058

zHM0591

5.218.31

2.51

4.21

2.11

0.91

5.81

0.53

0.33

LROssoLnruteRtuptuOBdzHM05912.02

FNerugiFesioNBdzHM05913.4

V

D

R

hT

Test Conditions:

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

egatloVeciveDV6.30.44.4

ecnatsiseRlamrehTW/C°79

VS = 8 V ID = 75 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R

= 51 Ohms TL = 25ºC ZS = ZL = 50 Ohms

BIAS

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

1

EDS-100613 Rev B

Preliminary

SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier

Typical RF Performance at Key Operating Frequencies

Frequency (MHz)

Frequency (MHz)

Frequency (MHz)

lobmyS retemaraP tinU 001 005 058 0591 0042 0053

GniaGlangiSllamSBd0.419.318.314.212.116.9

PIO

3

P

Bd1

tnioPtpecretnIredrOdrihTtuptuOmBd0.730.630.530.334.131.82

noisserpmoCBd1tarewoPtuptuOmBd7.810.910.917.718.612.51

LRIssoLnruteRtupnIBd8.814.718.516.415.516.02

LROssoLnruteRtuptuOBd7.533.638.329.314.314.61

S

21

noitalosIesreveRBd4.816.818.818.815.810.71

FNerugiFesioNBd0.49.39.33.45.48.4

VS = 8 V ID = 75 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Test Conditions:

VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm

R

= 51 Ohms TL = 25ºC ZS = ZL = 50 Ohms

R

= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms

BIAS

BIAS

Frequency (MHz)

Noise Figure vs. Frequency

VD= 4.0 V, ID= 75 mA

6.0

5.0

4.0

3.0

2.0

Noise Figure (dB)

1.0

TL=+25ºC

0.0
012345

Frequency (GHz)

OIP3 vs. Frequency

VD= 4.0 V, ID= 75 mA

40

36

32

(dBm)

3

28

OIP

24

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)

+25°C

T

-40°C

L

+85°C

Absolute Maximum Ratings

retemaraP timiLetulosbA

.xaM

.xaM

.xaM

.xaM

.xaM

Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R

20

18

16

(dBm)

1dB

14

P

12

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

tnerruCeciveD

I(D)

eciveD

V(egatloV

)V6

D

rewoPtupnIFR

pmeTnoitcnuJ

T(.J)

T(egnaR.

pmeTgnitarepO

)

L

pmeTegarotS

.

P

vs. Frequency

1dB

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

105Am

.egamadtnenamrepesuac

th

T

L

mBd61+

C°051+

C°051+

C°58+otC°04-

yamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO

+25°C

-40°C
+85°C

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

2

EDS-100613 Rev B

Preliminary

SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier

S21 vs. Frequency

20

16
12

(dB)

21

8

S

4

0

0123456

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

T

L

S12 vs. Frequency

-5

-10

-15

(dB)

12

-20

S

-25

-30
0123456

VD= 4.0 V, ID= 75 mA

Frequency (G Hz)

T

L

+25°C

-40°C
+85°C

+25°C

-40°C
+85°C

S11 vs. Frequency

-5

-10

-15

(dB)

-20

11

S

-25

-30

-35
0123456

VD= 4.0 V, ID= 75 mA

T

L

Frequency (GHz)

+25°C

-40°C
+85°C

S22 vs. Frequency

-5

-10

-15

(dB)

-20

22

S

-25

-30

-35
0123456

VD= 4.0 V, ID= 75 mA

Frequency (GHz)

T

L

+25°C

-40°C
+85°C

VD vs. ID over Temperature for fixed

90

VS= 8 V, R

= 51 ohms *

BIAS

85
80
75

(mA)

D

I

70

+85°C

+25°C

-40°C

65
60

3.6 3.8 4.0 4.2 4.4
V

(Volts)

D

* Note: In the applications circuit on page 4, R

VD vs. Temperature for Constant ID = 75 mA

4.60

4.40

4.20

(Volts)

D

4.00

V

3.80

3.60

-40 -15 10 35 60 85

compensates for voltage and current variation over temperature.

BIAS

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

3

Temperature (°C)

EDS-100613 Rev B

SGA-6286 Basic Application Circuit

Preliminary

SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier

V

S

RF in

R

BIAS

1 uF

1000

pF

C

D

L

C

Application Circuit Element Values

ecnerefeR

rotangiseD

005 058 0591 0042 0053

C

B

C

D

L

C

Fp022Fp001Fp86Fp65Fp93

Fp001Fp86Fp22Fp22Fp51

Hn86Hn33Hn22Hn81Hn51

)zhM(ycneuqerF

4

1

C

B

C

B

SGA-6286

2

A62

3

C

V

S

R

BIAS

L

C

B

1 uF

1000 pF

C

D

C

B

RF out

IrofseulaVrotsiseRsaiBdednemmoceR

Am57=

D

V(egatloVylppuS

)V6V8V01V21

S

R

SAIB

R:etoN

SAIB

721528011

.erutarepmetrevoytilibatssaibCDsedivorp

Mounting Instructions

1. Use a large ground pad area under device pins 2

and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

Part Identification Marking

The part will be marked with an A62 designator on
the top surface of the package.

3

4

A62

2

1

For package dimensions, refer to outline drawing at

www.stanfordmicro.com

Caution: ESD sensitive

Appropriate precautions in handling, packaging
and testing devices must be observed.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085

4

#niP noitcnuF noitpircseD

1 NIFResuehtseriuqernipsihT.niptupniFR

2 DNGrofselohaivesU.dnuorgotnoitcennoC

.elbissop

3 /TUOFR

SAIB

.noitareporeporp

4 DNG2niPsasemaS

Part Number Ordering Information

rebmuNtraP eziSleeR leeR/seciveD

6826-AGS"310003

roticapacgnikcolbCDlanretxenafo

.noitarepofoycneuqerfehtrofnesohc

daelecuderotecnamrofreptseb

sasdaeldnuorgotesolcsaecnatcudni

siegatlovCD.nipsaibdnatuptuoFR

CDaerofereht,nipsihtnotneserp

rofyrassecensiroticapacgnikcolb

EDS-100613 Rev B