Datasheet SGA-5589 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SGA-5589 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.9V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.

This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5589 requires only DC blocking
and bypass capacitors for external components.

Small Signal Gain vs. Frequency

dB

30

25

20

Preliminary

SGA-5589

DC-4000 MHz Silicon Germanium HBT
Cascadeable Gain Block

Product Features

• DC-4000 MHz Operation

• Single Voltage Supply

• High Output Intercept: +33 dBm typ. at 850 MHz

• Low Current Draw: 60mA at 3.9V typ.

• Low Noise Figure: 3dB typ. at 850 MHz

15

Applications

• Oscillator Amplifiers

10

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Frequency GHz

• PA for Low Power Applications

• IF/ RF Buffer Amplifier

• Drivers for CATV Amplifiers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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EDS-101443 Rev A

Absolute Maximum Ratings

Operation of this device above any one of these parameters
may cause permanent damage.

Bias Conditions should also satisfy the following expression:
IDVD (max) < (TJ - TOP)/Rth, j-l

Key parameters, at typical operating frequencies:

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Preliminary

Preliminary

SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

2

EDS-101443 Rev A

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Application Schematic for Operation at 850 MHz

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For 7.5V operation or higher, a resistor with a
power handling capability of 1/2W or greater is
recommended.

50 ohm

microstrip

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SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

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Preliminary

Preliminary

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Rbias

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50 ohm

microstrip

Application Schematic for Operation at 1950 MHz

50 ohm

microstrip

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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50 ohm

microstrip

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EDS-101443 Rev A

30

SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

S21, ID = 60 mA, T = +25C S12, ID = 60 mA, T = +25C

-10

Preliminary

Preliminary

dB

dB

25

20

15

10

0123456

Frequency GHz

S11, ID = 60 mA, T = +25C S22, ID = 60 mA, T = +25C

0

-10

-20

-30

0123456

Frequency GHz

S11, ID=60mA, Ta=25C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

dB

dB

-15

-20

-25

-30

0123456

Frequency GHz

0

-10

-20

-30

0123456

Frequency GHz

S22, I

=60mA, Ta=25C

D

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

6 GHz

6 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

4

EDS-101443 Rev A

30

SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

= 60 mA, T = -40C S12, ID = 60 mA, T = -40C

S21, I

D

-10

Preliminary

Preliminary

25

dB

20

15

10

0123456

Frequency GHz

S11, ID = 60 mA, T = -40C S22, ID = 60 mA, T = -40C

0

-10

dB

-20

-30

0123456

Frequency GHz

= 60 mA, T = -40C

S11, I

D

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

dB

dB

-15

-20

-25

-30

0123456

Frequency GHz

0

-10

-20

-30

-40

0123456

Frequency GHz

S22, ID = 60 mA, T = -40C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

6 GHz

6 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

5

EDS-101443 Rev A

30

SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

= 60 mA, T = +85C S12, ID = 60 mA, T = +85C

S21, I

D

-10

Preliminary

Preliminary

25

dB

20

15

10

0123456

Frequency GHz

S11, ID = 60 mA, T = +85C S22, ID = 60 mA, T = +85C

0

-10

dB

-20

-30

0123456

Frequency GHz

= 60 mA, T = +85C

S11, I

D

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

dB

dB

-15

-20

-25

-30

0123456

Frequency GHz

0

-10

-20

-30

0123456

Frequency GHz

S22, ID = 60 mA, T = +85C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

6 GHz

6 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

6

EDS-101443 Rev A

Preliminary

Preliminary

SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

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Package Dimensions

4

A55

3

2

Part Number Ordering Information

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Part Symbolization

The part will be symbolized with “A55” designator
on the top surface of the package.

PCB Pad Layout

DIMENSIONS ARE IN INCHES [MM]

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

7

EDS-101443 Rev A