Datasheet SGA-5586 Datasheet (Stanford Microdevices)

Preliminary

Product Description

Stanford Microdevices SGA-5586 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.9V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with F

This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5586 requires only DC blocking
and bypass capacitors for external components.

Small Signal Gain vs. Frequency

30

25

T up to 50 GHz.

SGA-5586

DC-4000 MHz Silicon Germanium HBT
Cascadeable Gain Block

Product Features

 DC-4000 MHz Operation
 Single Voltage Supply

 High Output Intercept: +32 dBm typ. at 850 MHz
 Low Current Draw: 60mA at 3.9V typ.

20

dB

 Low Noise Figure: 2.5dB typ. at 850 MHz

15

10

012345

Frequency GHz

Applications

 Oscillator Amplifiers
 PA for Low Power Applications
 IF/ RF Buffer Amplifier
 Drivers for CATV Amplifiers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.

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Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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2.22

EDS-101267 Rev B

Absolute Maximum Ratings

Operation of this device above any one of these parameters
may cause permanent damage.

Bias Conditions should also satisfy the following expression:
IDVD (max) < (TJ - TOP)/Rth, j-l

Key parameters, at typical operating frequencies:

Preliminary

Preliminary

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

2

EDS-101267 Rev B

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Application Schematic for Operation at 850 MHz

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For 7.5V operation or higher, a resistor with a
power handling capability of 1/2W or greater is
recommended.

50 ohm

microstrip

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100pF

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SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

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Preliminary

Preliminary

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50 ohm

microstrip

Application Schematic for Operation at 1950 MHz

50 ohm

microstrip

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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Rbias

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50 ohm

microstrip

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EDS-101267 Rev B

Preliminary

0

0

345

0

3

4

Preliminary

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

S21, ID =60mA, T=+25C S12, ID =60mA, T=+25C

3

-10

25

dB

20

15

10

12

Frequency GHz

S11, I

=60mA, T=+25C S22, ID =60mA, T=+25C

D

0

-10

dB

-20

-30

012345

Frequency GHz

S11, ID=60mA, Ta=25C

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

dB

dB

-15

-20

-25

-30

12

Frequency GHz

0

-10

-20

-30

012345

Frequency GHz

S22, I

=60mA, Ta=25C

D

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

5

5 GHz

5 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

4

EDS-101267 Rev B

30

0

3

4

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

S21, ID =60mA, T=-40C S12, ID =60mA, T=-40C

-10

Preliminary

Preliminary

25

dB

20

15

10

12

Frequency GHz

S11, ID =60mA, T=-40C S22, ID =60mA, T=-40C

0

-10

dB

-20

-30

012345

Frequency GHz

S11, ID=60mA, Ta= -40C

dB

5

dB

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

-15

-20

-25

-30

012345

Frequency GHz

0

-10

-20

-30

-40

012345

Frequency GHz

=60mA, Ta= -40C

S22, I

D

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

5 GHz

5 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

5

EDS-101267 Rev B

30

5

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

S21, ID =60mA, T=85C S12, ID =60mA, T=85C

-10

Preliminary

Preliminary

dB

dB

25

20

15

10

012345

Frequency GHz

S11, ID =60mA, T=85C S22, ID =60mA, T=85C

0

-10

-20

-30

012345

S11, ID=60mA, Ta=85C

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

dB

dB

-15

-20

-25

-30

012345

Frequency GHz

0

-10

-20

-30

01234

Frequency GHzFrequency GHz

S22, I

=60mA, Ta=85C

D

Freq. Min = 0.1 GHz

Freq. Max = 5.0 GHz

5 GHz

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

6

5 GHz

EDS-101267 Rev B

Preliminary

Preliminary

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

Part Number Ordering Information

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Caution ESD Sensitive:

Appropriate precautions in handling, packaging
and testing devices must be observed.

Evaluation Board Layout

The part will be symbolized with an A55 designator

Part Symbolization

on the top surface of the package.

PCB Pad Layout

Package Dimensions

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

7

EDS-101267 Rev B

For 86 Outline

SGA-5586 DC-4000 MHz 3.9V SiGe Amplifier

Component Tape and Reel Packaging

Tape Dimensions

Preliminary

Preliminary

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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EDS-101267 Rev B

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01.0±01.6

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