Datasheet SGA-5489 Datasheet (Stanford Microdevices)

Preliminary

Product Description

Stanford Microdevices’ SGA-5489 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.3V . This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.

This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5489 requires only DC
blocking and bypass capacitors for external components.

Small Signal Gain vs. Frequency

25

20

SGA-5489

DC-4000 MHz Silicon Germanium HBT
Cascadeable Gain Block

Product Features

• DC-4000 MHz Operation

• Single Voltage Supply

• High Output Intercept: +30.8dBm typ. at 850 MHz

• Low Current Draw: 60mA at 3.3V typ.

15

dB

• Low Noise Figure: 2.8dB typ. at 850 MHz

10

5

012345

Frequency GHz

Applications

• Oscillator Amplifiers

• PA for Low Power Applications

• IF/ RF Buffer Amplifier

• Drivers for CATV Amplifiers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www .stanfordmicro.com

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5.32

1.32

EDS-100618 Rev B

Absolute Maximum Ratings

Operation of this device above any one of these parameters
may cause permanent damage.

Bias Conditions should also satisfy the following expression:
IDVD (max) < (TJ - TOP)/Rth, j-l

Key parameters, at typical operating frequencies:

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6.41

2.51

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1.32

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Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

2

EDS-100618 Rev B

Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

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For 7.5V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.

50 ohm

microstrip

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Application Schematic for Operation at 1950 MHz

50 ohm

microstrip

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

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25 ohms

50 ohm

microstrip

VS

EDS-100618 Rev B

Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

S21, ID =60mA, T=+25C

25

20

dB

15

10

5

012345

Frequency GHz

S11, ID =60mA, T=+25C

0

-10

dB

-20

-30

-40
012345

Frequency GHz

dB

dB

S12, ID =60mA, T=+25C

0

-10

-20

-30

-40
012345

Frequency GHz

S22, ID =60mA, T=+25C

0

-10

-20

-30

-40
012345

Frequency GHz

S22, I

S11, ID=60mA, T a=25C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

=60mA, T a=25C

D

6 GHz

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

EDS-100618 Rev B

Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

dB

dB

S21, ID =60mA, T=-40C

25

20

15

10

5

012345

Frequency GHz

S11, ID =60mA, T=-40C

0

-10

-20

-30

-40
012345

Frequency GHz

dB

dB

S12, ID =60mA, T=-40C

0

-10

-20

-30

-40
012345

Frequency GHz

S22, ID =60mA, T=-40C

0

-10

-20

-30

-40

-50
012345

Frequency GHz

S22, I

S1 1, ID=60mA, T a= -40C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5

=60mA, T a= -40C

D

6 GHz

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

EDS-100618 Rev B

Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

dB

dB

S21, ID =60mA, T=85C

25

20

15

10

5

012345

Frequency GHz

S11, ID =60mA, T=85C

0

-10

-20

-30

-40
012345

dB

dB

S12, ID =60mA, T=85C

0

-10

-20

-30

-40
012345

Frequency GHz

S22, ID =60mA, T=85C

0

-10

-20

-30

-40
012345

Frequency GHzFrequency GHz

S11, ID=60mA, T a=85C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

6

S22, ID=60mA, T a=85C

6 GHz

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

EDS-100618 Rev B

Preliminary

Preliminary

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

Caution ESD Sensitive:

Appropriate precautions in handling, packaging
and testing devices must be observed.

Outline Drawing

1

A54

2

3

4

Part Number Ordering Information

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9845-AGS"310003

Package Dimensions

Part Symbolization

The part will be symbolized with a “A54” designator on

the top surface of the package.

PCB Pad Layout

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

7

EDS-100618 Rev B

For 89 Outline

SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier

Component T ape and Reel Packaging

T ape Dimensions

Preliminary

Preliminary

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10.0-/+19.4

10.0-/+25.4

10.0-/+09.1

10.0-/+00.8

01.0-/+06.1

50.0-/+55.1

10.0-/+00.4

10.0-/+57.1

52.0-/+01.9

10.0-/+50.0

30.0-/+0.21

50.0-/+03.0

01.0-/+05.5

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

8

EDS-100618 Rev B