Datasheet SGA-5389 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SGA-5389 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.6V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.

This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5389 requires only DC
blocking and bypass capacitors for external components.

Small Signal Gain vs. Frequency

20

15

dB

10

Preliminary

SGA-5389

DC-3200 MHz Silicon Germanium HBT
Cascadeable Gain Block

Product Features

• DC-3200 MHz Operation

• Single Voltage Supply

• High Output Intercept: +31.5 dBm typ. at 850 MHz

• Low Current Draw: 60mA at 3.6V typ.

• Low Noise Figure: 3.3 dB typ. at 850 MHz

5

0

012345

Frequency GHz

Applications

• Oscillator Amplifiers

• P A for Low Power Applications

• IF/ RF Buffer Amplifier

• Drivers for CATV Amplifiers

lobmyS

Z

0

P

Bd1

PI

3

S

12

htdiwdnaBhtdiwdnaBBd3 zHM0023

S

11

S

22

S

21

FNZ,erugiFesioN

V

D

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www .stanfordmicro.com

l-j,htR)dael-noitcnuj(ecnatsiseRlamrehT

I,smhO05=

D

niaGlangiSllamS

RWSVtupnIzHM0005-CD=f-1:52.1

RWSVtuptuOzHM0005-CD=f-1:04.1

noitalosIesreveR

S

egatloVeciveDV1.35.31.4

:snoitidnoCtseT:sretemaraP

o

52=T,Am06=

C

noisserpmoCBd1tarewoPtuptuO

tnioPtpecretnIredrOdrihT

mBd0=enotreptuorewoP

smhO05=zHM0591=fBd8.2

1

zHM058=f

zHM0591=f
zHM0042=f

zHM058=f

zHM0591=f
zHM0042=f

zHM058=f

zHM0591=f
zHM0042=f

zHM058=f

zHM0591=f
zHM0042=f

stinU .niM .pyT .xaM

mBd
mBd
mBd

mBd
mBd
mBd

Bd
Bd
Bd

Bd
Bd
Bd

o

W/C79

Doc # EDS-100617 Rev.B

3.61

0.51

1.41

5.13

1.82

6.62

9.61

8.51

4.51

3.12

7.12

8.12

Absolute Maximum Ratings

Operation of this device above any one of these parameters
may cause permanent damage.

Bias Conditions should also satisfy the following expression:
IDVD (max) < (TJ - TOP)/Rth, j-l

Key parameters, at typical operating frequencies:

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

retemaraPeulaVtinU

tnerruCylppuS021Am

erutarepmeTgnitarepO58+ot04-C

rewoPtupnImumixaM01+mBd

egnaRerutarepmeTegarotS051+ot04-C

erutarepmeTnoitcnuJgnitarepO051+C

retemaraP

52oC tinU I(

D

)detonesiwrehtosselnu,Am06=

zHM005

lacipyT noitidnoCtseT

niaG

erugiFesioN

3PItuptuO

Bd1PtuptuO

ssoLnruteRtupnI

noitalosI

1.71

4.3

8.13

7.61

3.32

0.12

Bd
Bd

Z

S

mBd

smhO05=

mBd0=enotreptuoP,zHM1=gnicapsenoT

mBd
Bd
Bd

zHM058

niaG

erugiFesioN

3PItuptuO

Bd1PtuptuO

ssoLnruteRtupnI

noitalosI

9.61

3.3

5.13

3.61

8.02

3.12

Bd
Bd

Z

S

mBd

smhO05=

mBd0=enotreptuoP,zHM1=gnicapsenoT

mBd
Bd
Bd

zHM0591

niaG

erugiFesioN

3PItuptuO

Bd1PtuptuO

ssoLnruteRtupnI

noitalosI

8.51

8.2

1.82

0.51

7.81

7.12

Bd
Bd

Z

S

mBd

smhO05=

mBd0=enotreptuoP,zHM1=gnicapsenoT

mBd
Bd
Bd

zHM0042

niaG

erugiFesioN

3PItuptuO

Bd1PtuptuO

ssoLnruteRtupnI

noitalosI

4.51

1.4

6.62

1.41

4.91

8.12

Bd
Bd

Z

S

mBd

smhO05=

mBd0=enotreptuoP,zHM1=gnicapsenoT

mBd
Bd
Bd

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

2

Doc # EDS-100617 Rev. B

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

#niPnoitcnuF

1 NIFR

2 DNG

3 ccV/TUOFRebdluohssaiB.nipsaibdnatuptuoFR

4 DNG.2niPsaemaS

Application Schematic for Operation at 850 MHz

seulaVrotsiseRsaiBdednemmoceR

ylppuS

V5V5.7V9V21

)sV(egatloV

saibR

428619051

)smhO(

For 7.5V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.

50 ohm

microstrip

.elbissop

100pF

1uF

noitpircseDcitamehcSeciveD

nafoesuehtseriuqernipsihT.niptupniFR

.noitarepofoycneuqerf

.ecnatcudnidaelecuderotecnamrofrep

sasdaeldnuorgotesolcsasaivecalP

68pF

33nH

2

1

3

4

100pF

ehtrofnesohcroticapacgnikcolbCDlanretxe

tsebrofselohaivesU.dnuorgotnoitcennoC

seireslanretxenahguorhtnipsihtotdeilppus
CDesuaceB.rotcudniekohcFRdnarotsiser
gnikcolbCDa,nipsihtnotneserpsignisaib

snoitacilppatsomnidesuebdluohsroticapac

edisylppusehT.)citamehcsnoitacilppaees(

.dessapybllewebdluohskrowtensaibehtfo

Rbias

VS

50 ohm

microstrip

Application Schematic for Operation at 1950 MHz

50 ohm

microstrip

1uF

22pF

2

1

3

68pF

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

3

22nH

68pF

Rbias

50 ohm

microstrip

VS

Doc # EDS-100617 Rev. B

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

S21, ID =60mA, T=+25C

20
15
10

dB dB

5
0

012345

Frequency GHz

S11, ID =60mA, T=+25C

0

-20

dB

-40

-60
012345

dB

Frequency GHz

S12, ID =60mA, T=+25C

-10

-15

-20

-25

-30
012345

Frequency GHz

S22, ID =60mA, T=+25C

0

-10

-20

-30
012345

Frequency GHz

S22, I

S1 1, ID=60mA, T a= +25C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

=60mA, T a= +25C

D

6 GHz

Doc # EDS-100617 Rev. B

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

S21, ID =60mA, T=-40C

20

15

10

dB

5

0

012345

Frequency GHz

S11, ID =60mA, T=-40C

0

-10

-20

dB

-30

-40
012345

Frequency GHz

S12, ID =60mA, T=-40C

-10

-15

-20

dB

-25

-30
012345

Frequency GHz

S22, ID =60mA, T=-40C

0

-10

-20

dB

-30

-40
012345

Frequency GHz

S1 1, ID=60mA, T a= -40C S22, ID=60mA, T a= -40C

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5

Doc # EDS-100617 Rev. B

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

S21, ID =60mA, T=85C

20

15

10

dB

5

0

012345

Frequency GHz

S11, ID =60mA, T=85C

0

-10

-20

dB

-30

-40
012345

Frequency GHz

S12, ID =60mA, T=85C

-10

-15

-20

dB

-25

-30
012345

Frequency GHz

S22, ID =60mA, T=85C

0

-10

-20

dB

-30

-40
012345

Frequency GHz

S22, I

S1 1, ID=60mA, T a= 85C

6 GHz

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

=60mA, T a= 85C

D

Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

6

Doc # EDS-100617 Rev. B

Preliminary

Preliminary

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

Caution ESD Sensitive:

Appropriate precautions in handling, packaging
and testing devices must be observed.

Outline Drawing

1

A53

2

3

4

Part Number Ordering Information

rebmuNtraPeziSleeRleeR/seciveD

9835-AGS"310003

Package Dimensions

Part Symbolization

The part will be symbolized with a “A53” designator on

the top surface of the package.

PCB Pad Layout

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

7

Doc # EDS-100617 Rev. B

For 89 Outline

SGA-5389 DC-3200 MHz 3.5V SiGe Amplifier

Component T ape and Reel Packaging

T ape Dimensions

Preliminary

Preliminary

eziS

)mm( leel

10.0-/+19.4

10.0-/+25.4

10.0-/+09.1

10.0-/+00.8

01.0-/+06.1

50.0-/+55.1

10.0-/+00.4

10.0-/+57.1

52.0-/+01.9

10.0-/+50.0

30.0-/+0.21

50.0-/+03.0

01.0-/+05.5

ytivaChtgneL

noitarofrePretemaiD

epaTrevoChtdiW

epaTreirraChtdiW

ecnatsiDnoitarofrePotytivaC

noitpircseDlobmyS

htdiW
htpeD

hctiP

retemaiDeloHmottoB

hctiP

noitisoP

ssenkcihTepaT

ssenkcihT

P
D

D
P

W

A
B
K

1

1

0
0

E
C

t

T
F

)noitceriDhtdiW(

noitarofrePotytivaC

P

2

01.0-/+00.2

)noitceriDhtgneL(

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

8

Doc # EDS-100617 Rev. B