Datasheet SGA-5289 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SGA-5289 is a high performance
cascadeable 50-ohm amplifier designed for operation at
voltages as low as 3.4V. This RFIC uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process featuring 1 micron emitters with FT up to 50 GHz.

This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5289 requires only DC
blocking and bypass capacitors for external components.

Small Signal Gain vs. Frequency

20

15

dB

10

Preliminary

SGA-5289

DC-5000 MHz Silicon Germanium
HBT Cascadeable Gain Block

Product Features

• DC-5000 MHz Operation

• Single Voltage Supply

• High Output Intercept: +32 dBm typ. at 850 MHz

• Low Current Draw: 60mA typ. at 3.4V

• Low Input/Output VSWR

5

0

0123456

Frequency GHz

Applications

• Oscillator Amplifiers

• Broadband Gain Blocks

• IF/ RF Buffer Amplifier

• Drivers for CATV Amplifiers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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EDS-100616 Rev B

8.51

4.41

6.31

8.13

1.82

3.62

2.31

6.21

4.21

4.81

2.91

5.91

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

Absolute Maximum Ratings

Operation of this device above any one of these parameters
may cause permanent damage.

Bias Conditions should also satisfy the following expres­sion: IDVD (max) < (TJ - TOP)/Rth, j-l

Key parameters, at typical operating frequencies:

Preliminary

Preliminary

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

2

EDS-100616 Rev. B

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Application Schematic for Operation at 850 MHz

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For 7.5V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recom­mended.

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SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

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Preliminary

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Application Schematic for Operation at 1950 MHz

50 ohm

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

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50 ohm

microstrip

VS

EDS-100616 Rev. B

Preliminary

Preliminary

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

S21, ID =60mA, T=+25C

20

15

dB

10

5

0

0123456

S11, ID =60mA, T=+25C

0

-10

dB

-20

-30

-40
0123456

Frequency GHz

S12, ID =60mA, T=+25C

0

-10

dB

-20

-30

-40
0123456

Frequency GHzFrequency GHz

S22, ID =60mA, T=+25C

0

-10

-20

dB

-30

-40
0123456

Frequency GHz

S22, I

S11, ID=60mA, Ta= +25C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

=60mA, Ta= +25C

D

6 GHz

EDS-100616 Rev. B

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

20

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

S21, ID =60mA, T=-40C S12, ID =60mA, T=-40C

0

Preliminary

Preliminary

15

dB dB

10

5

0

0123456

Frequency GHz Frequency GHz

S11, ID =60mA, T=-40C S22, ID =60mA, T=-40C

0

-10

-20

dB

-30

-40

-50

-60
0123456

Frequency GHz Frequency GHz

S11, ID=60mA, Ta= -40C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

-10

-20

-30

-40
0123456

0

-10

dB

-20

-30

-40
0123456

S22, I

=60mA, Ta= -40C

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Freq. Min = 0.1 GHz

Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5

6 GHz

EDS-100616 Rev. B

Preliminary

Preliminary

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

S12, ID =60mA, T=85CS21, ID =60mA, T=85C

20

0

15

dB

10

5

0

0123456

Frequency GHz

S11, ID =60mA, T=85C

0

-10

dB

-20

-30

-40
0123456

Frequency GHz

S11, ID=60mA, Ta= 85C

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

-10

dB

-20

-30

-40
0123456

Frequency GHz

S22, ID =60mA, T=85C

0

-10

dB

-20

-30

-40
0123456

Frequency GHz

S22, I

=60mA, Ta= 85C

D

Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz

6 GHz

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

6

6 GHz

EDS-100616 Rev. B

Preliminary

Preliminary

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

Caution: ESD sensitive

Appropriate precautions in handling, packaging
and testing devices must be observed.

Package Dimensions

Outline Drawing

1

A52

2

3

4

Part Number Ordering Information

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Part Symbolization

The part will be symbolized with a “A52” designator on

the top surface of the package.

PCB Pad Layout

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

7

EDS-100616 Rev. B

For 89 Outline

SGA-5289 DC-5000 MHz 3.4V SiGe Amplifier

Component Tape and Reel Packaging

Tape Dimensions

Preliminary

Preliminary

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10.0-/+19.4

10.0-/+25.4

10.0-/+09.1

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01.0-/+06.1

50.0-/+55.1

10.0-/+00.4

10.0-/+57.1

52.0-/+01.9

10.0-/+50.0

30.0-/+0.21

50.0-/+03.0

01.0-/+05.5

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

8

EDS-100616 Rev. B