Stanford Microdevices SGA-4463 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 45mA , the SGA-4463 typically provides +27 dBm output
IP3, 19.2 dB of gain, and +14 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Frequency
24
GAIN
18
12
Gain (dB)
6
0
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
ORL
IRL
Frequency (GHz)
0
-10
-20
-30
-40
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LRIssoLnruteRtupnIBdzHM05914.42
SGA-4463
DC-3500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 17 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Return Loss (dB)
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Bd
Bd
Bd
mBd
mBd
mBd
mBd
)Bd01-<(ssoLnruteRybdenimreteDzHM0053
zHM058
zHM0591
zhM0042
zHM058
zHM0591
zHM058
zHM0591
3.712.91
1.12
0.71
0.61
0.41
3.21
0.72
8.42
LROssoLnruteRtuptuOBdzHM05918.21
FNerugiFesioNBdzHM05918.2
V
D
R
hT
Test Conditions:
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
egatloVeciveDV9.22.35.3
ecnatsiseRlamrehTW/C°552
VS = 8 VID = 45 mA Typ.OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
R
= 110 OhmsTL = 25ºCZS = ZL = 50 Ohms
BIAS
Phone: (800) SMI-MMIChttp://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
1
EDS-100644 Rev.B
Page 2
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
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3
P
Bd1
tnioPtpecretnIredrOdrihTtuptuOmBd8.720.728.42
noisserpmoCBd1tarewoPtuptuOmBd0.410.413.21
LRIssoLnruteRtupnIBd5.225.919.914.421.125.61
LROssoLnruteRtuptuOBd8.227.124.818.219.115.01
S
21
noitalosIesreveRBd4.328.220.322.227.128.91
FNerugiFesioNBd6.25.28.2
VS = 8 VID = 45 mA Typ.OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Test Conditions:
VS = 8 VID=80 mATyp.OIP3Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 110 OhmsTL = 25ºCZS = ZL = 50 Ohms
R
= 39 OhmsTL=25ºCZS = ZL = 50 Ohms
BIAS
BIAS
Frequency (MHz)
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
5
4
3
TL=+25ºC
2
Noise Figure (dB)
1
TL=+25ºC
0
00.511.522.53
Frequency (GHz)
OIP3 vs. Frequency
35
30
25
(dBm)
3
OIP
20
15
00.511.522.53
VD=3.2 V, ID= 45 mA (Typ.)
T
L
TL=+25ºC
Frequency (G Hz )
Absolute Maximum Ratings
retemaraPtimiLetulosbA
.xaM
.xaM
.xaM
.xaM
.xaM
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R
18
15
12
(dBm)
1dB
P
9
6
00.511.522.53
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.
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D
T(egnaR.
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L
vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
Frequency (GHz)
Am
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.egamadtnenamrepesuac
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Phone: (800) SMI-MMIChttp://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-100644 Rev. B
Page 3
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
|S21| vs. Frequency
24
18
12
(dB)
21
S
6
0
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
|S12| vs. Frequency
-10
-15
-20
(dB)
12
S
-25
-30
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
|S11| vs. Frequency
0
-10
-20
(dB)
11
S
-30
-40
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
|S22| vs. Frequency
0
-10
-20
(dB)
22
S
-30
-40
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
NOTE: Full S-parameter data available at www.stanfordmicro.com
Phone: (800) SMI-MMIChttp://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
3
EDS-100644 Rev. B
Page 4
Basic Application Circuit
Preliminary
SGA-4463 DC-3500 MHz Cascadable MMIC Amplifier
R
V
S
BIAS
1 uF
1000
pF
C
D
L
C
1,2
3
RF in
C
C
SGA-4463
B
B
Part Identification Marking
The part will be marked with an A44 designator on
the top surface of the package.
4,5
A
4
4
6
C
B
V
S
R
BIAS
L
C
C
6 5 4
A44
1 2 3
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
RF out
1 uF
1000 pF
C
D
B
Application Circuit Element Values
ecnerefeR
rotangiseD
005058059100420053
C
B
C
D
L
C
R:etoN
Fp022Fp001Fp86Fp65Fp93
Fp001Fp86Fp22Fp22Fp51
Hn86Hn33Hn22Hn81Hn51
I
Am54=
D
V(egatloVylppuS
)V6V8V01V21
S
R
SAIB
SAIB
26011051002
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
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SAIB
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Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Phone: (800) SMI-MMIChttp://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
Part Number Ordering Information
rebmuNtraPeziSleeRleeR/seciveD
3644-AGS"70003
4
EDS-100644 Rev. B
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