Page 1
Product Description
Stanford Microdevices SGA-4263 is a high performance
SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation
products. At 850 Mhz and 45mA , the SGA-4263 typically
provides +29.3 dBm output IP3, 13.7 dB of gain, and +14.2
dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias
resistor and an optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
16
GAIN
12
ORL
8
Gain (dB)
4
0
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
IRL
Frequency (GHz)
0
-10
-20
-30
-40
SGA-4263
DC-3500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 12.7 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Return Loss (dB)
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Preliminary
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Bd
Bd
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tnioPtpecretnIredrOdrihTtuptuO
)mBd5-=enotreptuorewoP(
mBd
mBd
mBd
mBd
)Bd01-<(ssoLnruteRybdenimreteDzHM0053
zHM058
zHM0591
zHM0042
zHM058
zHM0591
zHM058
zHM0591
3.217.31
7.21
4.21
2.41
5.21
3.92
7.52
LRIssoLnruteRtupnIBdzHM05913.13
LROssoLnruteRtuptuOBdzHM05918.31
FNerugiFesioNBdzHM05917.3
V
D
R
hT
Test Conditions:
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent right s or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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VS = 8 V ID = 45 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
R
= 110 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
1
EDS-100640 Re v. B
1.51
Page 2
Preliminary
Preliminary
SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
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noisserpmoCBd1tarewoPtuptuOmBd1.412.415.213.11
LRIssoLnruteRtupnIBd5.728.134.923.131.333.81
LROssoLnruteRtuptuOBd4.320.227.128.312.217.11
S
21
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FNerugiFesioNBd6.34.37.33.4
VS = 8 V ID = 45 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm
Test Conditions:
VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
= 110 Ohms TL = 25ºC ZS = ZL = 50 Ohms
R
= 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
BIAS
BIAS
Frequency (MHz)
Noise Figure vs. Frequency
5
4
3
2
Noise Figure (dB)
1
0
00.511.522.53
VD= 3.2 V, ID= 45 mA (Typ.)
TL=+25ºC
TL=+25ºC
Frequency (GHz )
OIP3 vs. Frequency
35
30
25
(dBm)
3
OIP
20
15
0 0.5 1 1.5 2 2.5 3
VD=3.2 V, ID= 45 mA (Typ.)
T
L
TL=+25ºC
Frequency ( GH z)
Absolute Maximum Ratings
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Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/R
18
15
12
(dBm)
1dB
P
9
6
00.511.522.53
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D
T(egnaR.
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L
vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
Frequency (GHz)
Am
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Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
2
EDS-100640 Rev. B
Page 3
Preliminary
Preliminary
SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier
|S21| vs. Frequency
20
15
10
(dB)
21
S
5
0
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
+25°C
-40°C
T
L
+85°C
Frequency (GHz)
|S12| vs. Frequency
-10
-15
(dB)
-20
12
S
-25
-30
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
|S11| vs. Frequency
0
-10
(dB)
-20
11
S
-30
-40
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
|S22| vs. Frequency
0
-10
-20
(dB)
22
S
-30
-40
0123456
VD= 3.2 V, ID= 45 mA (Typ.)
T
L
Frequency (GHz)
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
NOTE: Full S-parameter data available at www.stanfordmicro.com
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
3
EDS-100640 Rev. B
Page 4
Basic Application Circuit
Preliminary
Preliminary
SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier
R
V
S
BIAS
1 uF
1000
pF
C
D
L
C
1,2
SGA-4263
4,5
6
C
B
V
S
R
BIAS
L
A
4
2
C
C
RF in
3
C
B
C
B
Part Identification Marking
The part will be marked with an A42 designator on
the top surface of the package.
6 5 4
A42
1 2 3
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
RF out
1 uF
1000 pF
C
D
B
Application Circuit Element Values
ecnerefeR
rotangiseD
005 058 0591 0042 0053
C
B
C
D
L
C
R:etoN
Fp022Fp001Fp86Fp65Fp93
Fp001Fp86Fp22Fp22Fp51
Hn86Hn33Hn22Hn81Hn51
V(egatloVylppuS
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S
R
SAIB
SAIB
26011051002
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
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Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Phone: (800) SMI-MMIC http://www.stanfordmicro.com726 Palomar Ave., Sunnyvale, CA 94085
Part Number Ordering Information
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3624-AGS"70003
4
EDS-100640 Rev. B
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