Page 1
SFW/I9614
BV
DSS
= -250 V
R
DS(on)
= 4.0 Ω
ID= -1.6 A
-250
-1.6
-1.0
-6.5
112
-1.6
2.0
-4.8
3.1
20
0.16
- 55 to +150
300
6.25
40
62.5
--
--
--
30
+
_
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA(Max.) @ V
DS
= -250V
ν Low R
DS(ON)
: 3.5 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θJC
R
θJA
R
θJA
o
C/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25oC)
Continuous Drain Current (T
C
=100oC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25oC)
Total Power Dissipation (T
C
=25oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
V
DSS
V
*
O
1
O
2
O
3
O
1
O
1
2001 Fairchild Semiconductor Corporation
Rev. B1
Page 2
SFW/I9614
-250
--
-2.0
--
--
--
--
--
-0.21
--
--
--
--
--
35
13
10
18
24
11
9
2.0
4.6
--
--
-4.0
-100
100
-10
-100
4.0
--
295
55
20
30
45
60
30
11
--
--
1.0
225
--
--
--
130
0.61
-1.6
-6.5
-4.0
--
--
Notes ;
Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
L=70mH, I
AS
=-1.6A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
I
SD
-1.6A, di/dt 250A/µs, VDDBV
DSS
, Starting TJ =25oC
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
P-CHANNEL
POWER MOSFET
Electrical Characteristics
(TC=25oC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
CharacteristicSymbol
Max. UnitsTyp.Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
∆BV/∆T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,ID=-250µA
I
D
=-250µA See Fig 7
V
DS
=-5V,ID=-250µA
V
GS
=-30V
V
GS
=30V
VDS=-250V
V
DS
=-200V,TC=125oC
V
GS
=-10V,ID=0.8A
V
DS
=-40V,ID=-0.8A
VDD=-125V,ID=-1.6A,
R
G
=24Ω
See Fig 13
V
DS
=-200V,VGS=-10V,
I
D
=-1.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
J
=25oC,IS=-1.6A,VGS=0V
T
J
=25oC,IF=-1.6A
di
F
/dt=100A/µs
O
4
O
4
O
5
O
4
O
4
O
5
O
1
O
4
O
4
Page 3
SFW/I9614
0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0
10
-2
10
-1
10
0
150 oC
25 oC
@ Notes :
1. V
GS
= 0 V
2. 250
µ
s Pulse Test
-I
DR
, Reverse Drain Cu rrent [A]
-VSD , Source-Drain Vol tage [ V]
0246810
0
2
4
6
8
10
12
VDS = -200 V
VDS = -125 V
VDS = -50 V
@ Notes : ID = -1.6 A
-V
GS
, Gate-Source Volt age [V]
QG , Total Gate Charg e [nC]
0123456
0
2
4
6
8
10
12
@ Note : TJ = 25 oC
VGS = -20 V
VGS = -10 V
R
DS(on)
, [
Ω
]
Drain-Source On -Resi sta nce
-ID , Drain Current [A]
246810
10
-2
10
-1
10
0
25 oC
150 oC
- 55 oC
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
µ
s Pulse Test
-I
D
, Drain Current [A]
-VGS , Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
V
GS
Top : -1 5 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Botto m : -4.5 V
-I
D
, Drain Current [A]
-VDS , Drain-Source Volt age [ V]
10
0
10
1
0
100
200
300
400
C
iss
= Cgs+ Cgd ( Cds= shorted )
C
oss
= Cds+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
-VDS , Drain-Source Voltage [V]
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
Page 4
SFW/I9614
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25 oC
2. T
J
= 150 oC
3. Single Pul se
Operation in This Area
is Limited by R
DS(on)
-I
D
, Drain Current [A ]
-VDS , Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
-I
D
, Drain Current [A ]
Tc , Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=6.25 oC/W Max.
2. Duty Factor, D=t1/t
2
3. TJM-TC=PDM*Z
θ
JC
(t)
Z
θ
JC
(t) , Thermal Response
t1 , Square Wave Pulse Durati on [sec]
-75 -50 -25 0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -0.8 A
R
DS(on)
, (Normalized)
Drain-Source O n-Res istanc e
TJ , Junction Temperatur e [oC]
-75 -50 -25 0 25 50 75 100 125 150 175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250 µA
-BV
DSS
, (Normalized)
Drain-Source Br eakdown Voltage
TJ , Junction Temperat ure [oC]
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
Page 5
SFW/I9614
P-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=LL I
AS
2
---2
1
-------------------BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)tr
t
on
t
off
t
d(off)
t
f
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
Vary tpto obtain
required peak I
D
-10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
-10V
V
out
V
in
R
L
DUT
R
G
-3mA
V
GS
Current Sampling (IG)
Resistor
Current Sampling (ID)
Resistor
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
“ Current Regulator
”
R
1
R
2
Page 6
SFW/I9614
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
--
L
I
S
Driver
V
GS
R
G
Comp liment of DU T
(N-Channel)
V
GS
• dv/dt controlled by “RG”
•I
S
controlled by Duty Factor “D”
V
DD
10V
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
f
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
Page 7
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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PACMAN™
POP™
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QFET™
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SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
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CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
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TM
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TM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
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STAR*POWER is used under license
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