Datasheet SFI9530, SFW9530 Datasheet (Fairchild Semiconductor)

Advanced Power MOSFET

SFW/I9530

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area

o

n 175

C Operating Temperature

n Lower Leakage Current : 10 µA(Max.) @ V n Low R

: 0.225 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T Total Power Dissipation (T

=25oC)

A

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

= -100V

DS

*

O

O O O O

BV R

DS(on)

DSS

= -100 V

= 0.3

Ω

ID= -10.5 A

D2-PAK

1

3

1. Gate 2. Drain 3. Source

-100

-10.5

-7.5

1

2

1 1

3

-42 ±30 368

-10.5

6.6

-6.5

3.8

66

0.44

- 55 to +175

300

2

1

I2-PAK

2

3

V A A

V

mJ

A

mJ

V/ns

W W

W/

o

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

When mounted on the mi nimum pad size recommended (PCB Mount).

*

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

2.27 40

62.5

o

C/W

Rev. C

SFW/I9530

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-100

--

-2.0

--

-0.1

--

5.5 800 160

60 13 22 45 25 30

5.4

12.2

--

-4.0

-100 100

-10

-100

0.3

--

1035

240

90 35 55

100

60 38

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-100V V

=-80V,TC=150oC

DS

=-10V,ID=-5.3A

V

GS

VDS=-40V,ID=-5.3A VGS=0V,VDS=-25V,f =1MHz

=-50V,ID=-10.5A,

V

DD

R

=12

G

See Fig 13

V

=-80V,VGS=-10V,

DS

I

=-10.5A

D

See Fig 6 & Fig 12

See Fig 5

Ω

O

4

O

4

O

4

5

O

4

O5O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Wi dt h Limi t ed by Maximum Junction Temperature

O

2

L=5.0mH, I

O

3

I

O

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-10.5A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-10.5A, di/dt 400A/µs, V

_

<

_

<

DD BVDSS

--

1

--

O

4

--

O

120

--

0.53

--

, Starting TJ =25oC

_

<

-10.5

--

-42

-4.0

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-10.5A,VGS=0V

J

T

=25oC,IF=-10.5A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

- 10 V

- 8.0 V

1

- 7.0 V

10

- 6.0 V

- 5.5 V

- 5.0 V Bott om : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFW/I9530

1

10

175 oC

0

10

25 oC

, Drain Current [A ]

D

-I

-1

1

10

246810

- 55 oC

-VGS , Gate-Source Vo ltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= -40 V

DS

s Pulse Test

µ

1.0

0.8

]

Ω

, [

0.6

DS(on)

R

0.4

Drain-Source On-Resistance

0.2

0.0 0 7 14 21 28 35 42

VGS = -10 V

VGS = -20 V

@ Note : TJ = 25 oC

-ID , Drain Current [A ]

1500

C

1000

500

Capacitance [pF]

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

175 oC

@ Notes :

1. V

, Reverse Dr ain Current [A]

DR

-I

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

2. 250

= 0 V

GS

s Pulse Test

µ

-VSD , Source-Dra in Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Voltage [V]

GS

-V

0

0 5 10 15 20 25 30 35

VDS = -20 V

VDS = -50 V

VDS = -80 V

@ Notes : ID =-10.5 A

QG , Total Gate Charge [nC]

SFW/I9530

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

2.5

POWER MOSFET

P-CHANNEL

1.1

1.0

, (Normalized)

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

0

10

Operation in This Area is Limited by R

@ Notes :

1. T

= 25 oC

C

= 175 oC

2. T

J

3. Single P ulse

DS(on)

0.1 ms

1 ms

10 ms

DC

1

10

2

10

1

10

, Drain Current [A]

D

-I

0

10

-1

10

-VDS , Drain-Source Voltage [V]

= 0 V

GS

= -250 µA

D

10

2.0

1.5

1.0

, (Normalized)

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

= -10 V

GS

= -5.3 A

D

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

12

10

8

6

4

, Drain Current [A ]

D

-I

2

0

25 50 75 100 125 150 175

Tc , Case Temperature [oC]

Fig 11. Thermal Response

D=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

0.01

(t) , Thermal Response

JC

θ

Z

-5

10

single pulse

-4

10

-3

10

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

-2

JC

θ

P

DM

.

-1

10

(t)=2.27 oC/W Max.

2

(t)

JC

θ

t

1.

t

2.

0

10

1

10

t1 , Square Wave Pulse Durati on [sec]

P-CHANNEL

POWER MOSFET

SFW/I9530

Fig 12. Gate Charge Test Circuit & Waveform

12V

-10V

“ Current Regulator

200nF

-3mA

V

R

G

”

50K

Ω

300nF

V

GS

R

1

Current Sampling (IG)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

V

out

in

DUT

Same Type

as DUT

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

GS

Q

-10V

V

DS

Q

gs

g

Q

gd

Charge

t

on

t

d(on)tr

)

DS

V

in

10%

90%

V

out

t

d(off)

t

off

t

f

Vary tpto obtain required peak I

-10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

V

DS

D

R

G

L

I

D

V

DD

C

V

DD

E

=LL I

AS

----

1 2

AS

t

p

I

(t)

D

2

-------------------BV

DSS

-- V

DD

Time

V

(t)

DS

DUT

I

AS

t

p

BV

DSS

SFW/I9530

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

P-CHANNEL

POWER MOSFET

+

V

DS

--

I

S

L

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

V

GS

V

GS

Driver

R

G

D =

IFM, Body Diode Forward Current

Comp liment of DU T

Gate Pulse Width

-------------------------Gate Pulse Period

Body Diode

Forward Voltage Drop

(N-Channel)

• dv/dt controlled by “RG”

•I

controlled by Duty Factor “D”

S

Body Diode Reverse Current

I

RM

V

f

di/dt

V

DD

10V

V

DD

Body Diode Recovery dv/dt

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I1

Datasheet SFI9530, SFW9530 Datasheet (Fairchild Semiconductor)

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