Page 1
Advanced Power MOSFET
SFW/I2955
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175oC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = -60V
Low R
: 0.22 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
=25oC)
A
=25oC)
C
*
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
O
O
O
O
O
BV
R
I
1
-60
-9.4
-6.6
1
2
1
1
3
-38
+
_
151
-9.4
4.9
-5.5
3.8
49
0.33
20
= -60 V
DSS
2
1
I2-PAK
2
3
Ω
= 0.3
DS(on)
= -9.4 A
D
D2-PAK
3
1. Gate 2. Drain 3. Source
V
A
A
V
mJ
A
mJ
V/ns
W
W
o
W/
C
- 55 to +175
o
C
300
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJC
R
θJA
R
θJA
*
When mounted on the minimum pad size recommended (PCB Mount).
©1999 Fairchi ld Semiconduc tor Corpor ation
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
*
--
--
--
3.06
40
62.5
o
C/W
Rev. B
Page 2
SFW/I2955
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(“Miller”) Charge
gd
=25oC unless otherwise specified)
C
Max. UnitsTyp.Min. Test Condition
V
-60
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.04
--
--
--
--
--
--
4.0
465
140
40
11
21
29
20
15
2.9
6.0
-4.0
-100
100
-100
600
215
--
--
-10
0.3
--
60
30
50
65
50
19
--
--
V
GS
o
I
V/
nA
µA
nC
=-250µA See Fig 7
C
D
V
V
DS
V
GS
V
GS
V
DS
V
DS
V
Ω
GS
V
Ω
DS
V
GS
pF
ns
See Fig 5
V
DD
=18
R
G
V
DS
I
=-9.4A
D
See Fig 6 & Fig 12
=0V,ID=-250µA
=-5V,ID=-250µA
=-20V
=20V
=-60V
=-48V,TC=150oC
=-10V,ID=-4.7A
=-30V,ID=-4.7A
O
O
4
4
=0V,VDS=-25V,f =1MHz
=-30V,ID=-9.4A,
Ω
4
See Fig 13
O
O
5
=-48V,VGS=-10V,
4
O5O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
2
L=2.0mH, I
O
3
I
SD
O
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
4
O
Essentially Independent of Operating Temperature
5
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-9.4A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
AS
-9.4A, di/dt 250A/µs, V
_
<
_
<
_
<
DD BVDSS
--
1
--
O
4
--
O
--
--
, Starting TJ =25oC
_
<
--
--
--
80
0.22
-9.4
-38
-3.8
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-9.4A,VGS=0V
J
T
=25oC,IF=-9.4A
J
/dt=100A/µs
di
F
O
4
Page 3
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : - 15 V
- 10 V
- 8.0 V
1
10
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-1
10
-VDS , Drain-Source Voltage [V]
0
10
@ Notes :
1. 250
2. T
s Pulse Test
µ
= 25 oC
C
SFW/I2955
1
10
o
C
175
0
10
25 oC
, Drain Current [A]
D
-I
-1
1
10
10
2 4 6 8 10
- 55
o
-VGS , Gate-Source Voltage [V]
@ Notes :
= 0 V
1. V
GS
2. V
= -30 V
DS
3. 250
C
s Pulse Test
µ
0.4
]
0.3
Ω
, [
0.2
DS(on)
R
0.1
Drain-Source On-Resistance
0.0
0 10 20 30 40 50 60 70
V
GS
= -10 V
VGS = -20 V
-ID , Drain Current [A]
800
C
iss
600
C
oss
400
Capacitance [pF]
C
200
rss
0
0
10
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
1
10
-VDS , Drain-Source Voltage [V]
@ Note : TJ = 25 oC
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
175 oC
, Reverse Drain Current [A]
-I
DR
-1
10
o
C
25
0.5 1.0 1.5 2.0 2.5 3.0 3.5
@ Notes :
1. V
= 0 V
GS
2. 250 µs Pulse Test
-VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
10
5
, Gate-Source Voltage [V]
GS
-V
0
0 2 4 6 8 10 12 14 16
VDS = -12 V
= -30 V
V
DS
VDS = -48 V
@ Notes : ID =-9.4 A
QG , Total Gate Charge [nC]
Page 4
SFW/I2955
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
, (Normalized)
DSS
-BV
0.9
Drain-Source Breakdown Voltage
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC]
2
10
1
10
, Drain Current [A]
D
-I
0
10
Operation in This Area
is Limited by R
@ Notes :
= 25 oC
1. T
C
2. T
= 175 oC
J
3. Single Pulse
DS(on)
@ Notes :
1. V
2. I
1 ms
10 ms
DC
= 0 V
GS
= -250 µA
D
0.1 ms
2.5
2.0
1.5
, (Normalized)
1.0
DS(on)
R
0.5
Drain-Source On-Resistance
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
@ Notes :
1. V
2. I
TJ , Junction Temperature [oC]
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
10
8
6
4
, Drain Current [A]
D
-I
2
= -10 V
GS
= -4.7 A
D
-1
10
0
10
1
10
2
10
-VDS , Drain-Source Voltage [V]
0
25 50 75 100 125 150 175
Tc , Case Temperature [oC]
Fig 11. Thermal Response
D=0.5
0
10
0.2
0.1
0.05
0.02
-1
10
0.01
(t) , Thermal Response
JC
θ
Z
-5
10
single pulse
-4
10
t1 , Square Wave Pulse Duration [sec]
-3
10
-2
10
@ Notes :
1. Z
2. Duty Factor, D=t
3. TJM-TC=PDM*Z
JC
θ
P
DM.
-1
10
(t)=3.06 oC/W Max.
JC
θ
t
1.
t
2.
0
10
(t)
1/t2
1
10
Page 5
P-CHANNEL
POWER MOSFET
SFW/I2955
Fig 12. Gate Charge Test Circuit & Waveform
-10V
“ Current Regulator
200nF12V
-3mA
V
R
G
”
Ω
50K
300nF
V
GS
R
1
Current Sampling (IG)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
V
out
in
DUT
Same Type
as DUT
DUT
R
2
Current Sampling (ID)
Resistor
R
L
V
DD
( 0.5 rated V
V
GS
Q
-10V
V
DS
Q
gs
g
Q
gd
Charge
t
on
t
d(on)tr
)
DS
V
in
10%
90%
V
out
t
off
t
f
t
d(off)
Vary tp to obtain
required peak I
-10V
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
L
V
DS
D
R
G
L
I
D
V
DD
C
V
DD
E
= LL I
AS
----
1
2
2
AS
t
p
(t)
I
D
DSS
-------------------BV
-- V
DSS
DD
Time
V
(t)
DS
DUT
I
AS
t
p
BV
DSS
Page 6
SFW/I2955
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
P-CHANNEL
POWER MOSFET
+
V
DS
--
I
S
L
V
GS
( Driver )
I
S
( DUT )
V
DS
( DUT )
V
GS
V
GS
Driver
R
G
D =
IFM , Body Diode Forward Current
Compliment of DUT
Gate Pulse Width
-------------------------Gate Pulse Period
Body Diode
Forward Voltage Drop
(N-Channel)
• dv/dt controlled by “RG”
• I
controlled by Duty Factor “D”
S
Body Diode Reverse Current
I
RM
V
f
di/dt
V
DD
10V
V
DD
Body Diode Recovery dv/dt
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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TM
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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