Datasheet SFU9210, SFR9210 Datasheet (Fairchild Semiconductor)

Advanced Power MOSFET

SFR/U9210

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower R

: 2.084 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T Total Power Dissipation (T

=25oC)

A

=25oC)

C

*

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds

1/8”

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O O

O O O

BV R I

1

1. Gate 2. Drain 3. Source

-200

-1.6

-1.08

1

2

1 1

3

-6.4

+

_

119

-1.6

1.9

-5.0

2.5 19

0.15

30

= -200 V

DSS

= 3.0

DS(on)

= -1.6 A

D

D-PAK

2

3

I-PAK

1

2

3

Ω

V A A

V

mJ

A

mJ

V/ns

W W

W/

o

C

- 55 to +150

o

C

300

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

*

When mounted on the minimum pad size recommended (PCB Mount).

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

6.58 50

110

o

C/W

Rev. B

SFR/U9210

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol

BV ∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(£¢Miller£¢) Charge

gd

=25oC unless otherwise specified)

C

Max. UnitsTyp.Min. Test Condition

V

-200

--

-2.0

--

-0.2

--

1.0

220

45 16 10 20 27 12

9

1.8

4.8

-4.0

-100 100

-100

--

-10

3.0

--

285

65 25 30 50 65 35 11

--

V

GS

o

I

V/

nA

µA

nC

=-250µA See Fig 7

C

D

V

DS

V

GS

V

GS

V

DS

V

DS

V

Ω

GS

V

Ω

DS

V

GS

pF

ns

See Fig 5

V

DD

=18

R

G

V

DS

I

=-1.75A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA =-30V =30V =-200V =-160V,TC=125oC

=-10V,ID=-0.8A =-40V,ID=-0.8A

O O

4

=0V,VDS=-25V,f =1MHz

=-100V,ID=-1.75A,

Ω

See Fig 13

=-160V,VGS=-10V,

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=70mH, I

O

3

I

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-1.6A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-1.75A, di/dt 250A/µs, VDDBV

SD

_

<

_

<

DSS

--

1

--

O

4

--

O

--

, Starting TJ =25oC

_

<

--

110

0.42

-1.6

-6.4

-4.0

--

Integral reverse pn-diode

A

in the MOSFET

V

T

=25oC,IS=-1.6A,VGS=0V

J

ns

T

=25oC,IF=-1.75A

J

µC

/dt=100A/µs

di

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

0

10

Bottom : - 4.5 V

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

10

8

]

Ω

, [

6

DS(on)

R

4

Drain-Source On-Resistance

2

0

0 1 2 3 4 5 6 7

-ID , Drain Current [A]

V

GS

10

= -10 V

@ Notes :

1. 250

2. T

0

VGS = -20 V

s Pulse Test

µ

= 25 oC

C

@ Note : TJ = 25 oC

SFR/U9210

0

10

o

150

C

o

25

, Drain Current [A]

D

-I

C

- 55

-1

1

10

2 4 6 8 10

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

0

10

150 oC

, Reverse Drain Current [A]

DR

-I

-1

10

0.5 1.0 1.5 2.0 2.5 3.0

o

25

C

-VSD , Source-Drain Voltage [V]

@ Notes :

= 0 V

1. V

GS

2. V

= -40 V

DS

3. 250

s Pulse Test

@ Notes :

1. V

2. 250

µ

= 0 V

GS

s Pulse Test

µ

o

C

400

C

iss

300

C

oss

200

C

Capacitance [pF]

100

rss

0

10

-VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= -40 V

V

10

DS

V

DS

V

DS

= -100 V = -160 V

5

, Gate-Source Voltage [V]

GS

-V

0

0 2 4 6 8 10

@ Notes : ID =-1.75 A

QG , Total Gate Charge [nC]

SFR/U9210

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

3.0

2.5

2.0

POWER MOSFET

P-CHANNEL

1.0

, (Normalized)

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

Operation in This Area

0

10

is Limited by R

@ Notes :

1. T

2. T

3. Single Pulse

1

10

0

10

, Drain Current [A]

D

-I

-1

10

= 25 oC

C

= 150 oC

J

DS(on)

10

1 ms

10 ms

DC

1

10

-VDS , Drain-Source Voltage [V]

= 0 V

GS

= -250 µA

D

0.1 ms

2

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

2.0

1.6

1.2

0.8

, Drain Current [A]

D

-I

0.4

0.0 25 50 75 100 125 150

Tc , Case Temperature [oC]

= -10 V

GS

= -0.9 A

D

1

10

0

10

(t) , Thermal Response

-1

JC

10

θ

Z

10

D=0.5

0.2

0.1

0.05

0.02

0.01

-5

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t

3. TJM-TC=PDM*Z

single pulse

-4

10

-3

10

-2

10

t1 , Square Wave Pulse Duration [sec]

JC

θ

P

DM.

-1

10

(t)=6.58 oC/W Max.

t

1.

t

2.

10

1/t2

(t)

JC

θ

0

1

10

P-CHANNEL

POWER MOSFET

SFR/U9210

Fig 12. Gate Charge Test Circuit & Waveform

-10V

“ Current Regulator

200nF12V

-3mA

V

R

G

”

50KΩ

300nF

V

GS

R

1

Current Sampling (IG)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

V

out

in

DUT

Same Type

as DUT

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

GS

Q

-10V

V

DS

Q

gs

g

Q

gd

Charge

t

on

t

d(on)tr

)

DS

V

in

10%

90%

V

out

t

off

t

f

t

d(off)

V

Vary tp to obtain required peak I

D

R

G

-10V

t

p

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

L

DS

I

D

V

DD

C

V

DD

E

= LL I

AS

----

1 2

I

D

DUT

I

AS

BV

DSS

2

--------------------

AS

BV

t

p

(t)

BV

DSS

-- V

DD

Time

V

(t)

DS

SFR/U9210

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

P-CHANNEL

POWER MOSFET

+

V

DS

--

I

S

L

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

V

GS

V

GS

Driver

R

G

D =

IFM , Body Diode Forward Current

Compliment of DUT

Gate Pulse Width

-------------------------Gate Pulse Period

Body Diode

Forward Voltage Drop

(N-Channel)

• dv/dt controlled by “RG”

• I

controlled by Duty Factor “D”

S

Body Diode Reverse Current

I

RM

V

f

di/dt

V

DD

10V

V

DD

Body Diode Recovery dv/dt

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™ E2CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™

UHC™ VCX™

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Datasheet SFU9210, SFR9210 Datasheet (Fairchild Semiconductor)

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