Datasheet SFS9540 Datasheet (Fairchild Semiconductor)

Advanced Power MOSFET

SFS9540

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge

o

n 175

C Operating Temperature

n Extended Safe Operating Area n Lower Leakage Current : 10 µA(Max.) @ V n Low R

: 0.161 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds

1/8”

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

= -100V

DS

O O

O O O

BV R

DS(on)

DSS

= -100 V

= 0.2

Ω

ID= -10.7 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

-100

-10.7

-8.1

1

-43

±30

2

1 1

3

534

-10.7

5.3

-6.5 53

0.35

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

Symbol Typ.

R

θJC

R

θJA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

2.83

62.5

o

C/W

Rev. C

SFS9540

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(＂Miller＂) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-100

--

-2.0

--

-0.11

--

8.5

1180

240

83 14 22 45 26 43

7.4

17.8

--

-4.0

-100 100

-10

-100

0.2

--

1535

360 125

40 55

100

60 54

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-100V V

=-80V,TC=150oC

DS

=-10V,ID=-5.4A

V

GS

=-40V,ID=-5.4A

V

DS

VGS=0V,VDS=-25V,f =1MHz

VDD=-50V,ID=-17A, R

=12

G

V

=-80V,VGS=-10V,

DS

I

=-17A

D

See Fig 6 & Fig 12

See Fig 5

Ω

See Fig 13

O

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature

1

O

2

L=7.0mH, I

O

3

I

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-10.7A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-17A, di/dt 450A/µs, VDDBV

SD

_

<

_

<

DSS

--

1

--

O

4

--

O

--

, Starting TJ =25oC

_

<

--

135

0.7

-10.7

-43

-4.0

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-10.7A,VGS=0V

J

T

=25oC,IF=-17A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

1

- 5.5 V

10

- 5.0 V Bott om : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFS9540

1

10

175 oC

25 oC

0

10

, Drain Current [A ]

D

-I

-1

1

10

246810

- 55 oC

-VGS , Gate-Source Vo ltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= -40 V

DS

s Pulse Test

µ

0.6

0.5

]

Ω

0.4

, [

DS(on)

R

0.3

VGS = -10 V

0.2

Drain-Source On-Resistance

0.1

0.0 0 8 16 24 32 40 48 56 64

VGS = -20 V

-ID , Drain Current [A ]

2000

C

1500

1000

Capacitance [pF]

500

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Note : TJ = 25 oC

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

175 oC

, Reverse Drain C urrent [A]

DR

-I

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

µ

-VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Vo ltage [V]

GS

-V

0

0 1020304050

VDS = -20 V

VDS = -50 V

VDS = -80 V

@ Notes : ID =-17 A

QG , Total Gate Char ge [nC]

SFS9540

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

2.5

POWER MOSFET

P-CHANNEL

1.1

1.0

, (Normalized)

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

Operation in This Area is Limited by R

2

10

DS(on)

0.1 ms

, Drain Current [A]

D

-I

1

10

@ No t e s :

@ No t e s : @ No t e s :@ No t e s :

1. TC = 25 oC

0

10

-1

10

0

10

= 175 oC

2. T

J

3. Single Pulse

1

10

1 ms

10 ms

DC

-VDS , Drain-Source Voltag e [V]

= 0 V

GS

= -250 µA

D

10

2.0

1.5

1.0

, (Normalized)

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

= -10 V

GS

= -8.5 A

D

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

12

9

6

, Drain Current [A ]

D

3

-I

2

0

25 50 75 100 125 150 175

Tc , Case Temperature [oC]

Fig 11. Thermal Response

D=0.5

0

10

0.2

0.1

0.05

-1

0.02

10

0.01

(t) , Thermal Response

JC

θ

Z

-5

10

single pulse

-4

10

-3

10

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

-2

(t)=2.83 oC/W Max.

JC

θ

P

DM

.

t

-1

10

2

(t)

JC

θ

1.

t

2.

0

10

1

10

t1 , Square Wave Pulse Durati on [sec]

P-CHANNEL

POWER MOSFET

SFS9540

Fig 12. Gate Charge Test Circuit & Waveform

12V

-10V

“ Current Regulator

200nF

-3mA

V

R

G

”

50KΩ

300nF

V

GS

R

1

Current Sampling (IG)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

V

out

in

DUT

Same Type

as DUT

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

GS

Q

-10V

V

DS

Q

gs

g

Q

gd

Charge

t

on

t

d(on)tr

)

DS

V

in

10%

90%

V

out

t

off

t

f

t

d(off)

Vary tpto obtain required peak I

-10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

V

DS

D

R

G

L

I

D

V

DD

C

V

DD

E

=LL I

AS

----

1 2

2

AS

t

p

I

(t)

D

DSS

-------------------BV

DSS

-- V

DD

Time

V

(t)

DS

DUT

I

AS

t

p

BV

DSS

SFS9540

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

V

DS

DUT

--

I

S

L

P-CHANNEL

POWER MOSFET

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

V

GS

V

GS

Driver

R

G

D =

IFM, Body Diode Forward Current

Comp limen t of DUT

Gate Pulse Width

-------------------------Gate Pulse Period

Body Diode

Forward Voltage Drop

(N-Channel)

• dv/dt controlled by “RG”

•I

controlled by Duty Factor “D”

S

Body Diode Reverse Current

I

RM

V

f

di/dt

V

DD

10V

V

DD

Body Diode Recovery dv/dt

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I1

Datasheet SFS9540 Datasheet (Fairchild Semiconductor)

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