Page 1
Millimeter
Millimeter
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation. Typical applications are
FEATURES
Low R
extends battery life
Low thermal impedance copper leadframe
provides higher efficiency and
DS(on)
DFN2X2-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SFN423P
-6.6 A , -20 V , R
P-Ch Enhancement Mode Power MOSFET
REF.
Min. Max.
A 2.0 BSC F 0.8 1.0
B 2.0 BSC G 1.5 1.7
C 0.6 0.9 H 0.5 BSC
D 0.2 REF. I 0.25 0.35
E 0.2 0.3 J 0.075 0.175
42 mΩ
DS(ON)
DFN2x2-8PP
REF.
ΩΩΩ
Min. Max.
DFN2X2-8PP
3K 7 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM -20 A
Continuous Source Current (Diode Conduction) 1 IS 4 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.)
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
TA = 25°C
TA = 70°C -5.3 A
TA = 25°C
TA = 70°C 1.92 W
ID
PD
-55 ~ 150 °C
STG
-6.6 A
3 W
Thermal Resistance Ratings
t ≦ 5 sec
1
Steady State
R
θJA
40 °C / W
90 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 1 of 4
Page 2
SFN423P
-6.6 A , -20 V , R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
42 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 20 - S VDS= -15V, ID= -4.4A
Diode Forward Voltage VSD - 0.83 - V IS= -2A, VGS=0
-0.4 - - V VDS=VGS, ID= -250µA
GS(th)
- - ±100 nA VDS=0, VGS= -8V
GSS
DSS
-10 - - A VDS= -5V, VGS= -4.5V
D(on)
DS(ON)
- - 1
- - 25 VDS= -16V, VGS=0, TJ=55°C
- - 42
- - 57 VGS= -2.5V, ID= -3.6A
- - 86 VGS= -1.8ID= -1A
VDS= -16V, VGS=0
µA
VGS= -4.5V, ID= -4.4A
mΩ
Dynamic 2
Total Gate Charge Qg - 6.8 Gate-Source Charge Qgs - 1.8 Gate-Drain Charge Qgd - 2.3 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance Rg - 3.7 - Ω f =1MHz
Turn-On Delay Time T
Rise Time Tr - 6 Turn-Off Delay Time T
Fall Time Tf - 15 -
Notes:
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 837 -
iss
- 98 -
oss
- 75 -
rss
- 6 -
d(on)
- 23 -
d(off)
nC
pF
nS
VDS= -10V,
VGS= -4.5V,
ID= -4.4A
VGS=0
VDS= -15V
f =1MHz
VDD= -10V
ID= -4.4A
V
= -4.5V
GEN
RL=2.3Ω
R
=6Ω
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SFN423P
-6.6 A , -20 V , R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
42 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SFN423P
-6.6 A , -20 V , R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
42 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 4 of 4
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