Datasheet SFM11-MH, SFM12-MH, SFM13-MH, SFM14-MH, SFM15-MH Datasheet (Formosa MS)

Features

Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.

For surface mounted applications.

Exceeds environmental standards of MIL-S-19500 /
228

Low leakage current.

Mechanical data

Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0393 gram

(V) (V) (V) (V) (nS)

(oC)

SFM11-MH S1 50 35 50

SFM12-MH S2 100 70 100

SFM13-MH S3 150 105 150

SFM14-MH S4 200 140 200

SFM15-MH S5 300 210 300

SFM16-MH S6 400 280 400

-55 to +150

Operating

temperature

V

RRM

*1

V

RMS

*2

V

R

*3

V

F

*4

T

RR

*5

SYMBOLS

MARKING

CODE

35

0.95

1.25

MAXIMUM RATINGS (AT T

A

=25oC unless otherwise noted)

PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT

Forward rectified current Ambient temperature = 50oC I

O

1.0 A

Forward surge current

8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)

I

FSM

25 A

VR = V

RRM TA

= 25oC 5.0 uA

VR = V

RRM TA

= 100oC 100 uA

Thermal resistance Junction to ambient Rq

JA

42

o

C / w

Diode junction capacitance f=1MHz and applied 4vDC reverse voltage C

J

10 pF

Storage temperature T

STG

-55 +150

o

C

Reverse current I

R

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage

*5 Reverse recovery time

查询SFM11-MH供应商

Chip Silicon Rectifier

SFM11-MH THRU SFM16-MH

Super fast recovery type

Formosa MS

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.055(1.4)

0.035(0.9)

0.028(0.7)

0.031(0.8) Typ.

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

RATING AND CHARACTERISTIC CURVES (SFM11-MH THRU SFM16-MH)

FIG.1-TYPICAL FORWARD

CHARACTERISTICS

10

1.0

H

-M

4

1

~SFM

H

-M

1

FM

FM1

S

S

15

-MH~SF

M16

H

-M

.1

Tj=25 C

Pulse Width 300us
1% Duty Cycle

.01

INSTANTANEOUS FORWARD CURRENT,(A)

.001

.4 .6 .8 1.0 1.2 1.4

1.6 1.8

FORWARD VOLTAGE,(V)

FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE

RECOVERY TIME CHARACTERISTICS

50

W

NONINDUCTIVE

(+)

25Vdc
(approx.)

( )

D.U.T.

1

W

NON­INDUCTIVE

W

10
NONINDUCTIVE

OSCILLISCOPE
(NOTE 1)

PULSE
GENERATOR
(NOTE 2)

FIG.2-TYPICAL FORWARD CURRENT

DERATING CURVE

1.2

1.0

0.8

0.6

0.4

Single Phase

Half Wave 60Hz

Resistive Or Inductive Load

0.2

AVERAGE FORWARD CURRENT,(A)

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE ( C)

FIG.4-MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

25

20

15

Tj=25 C

10

5

( )

PEAK FORWARD SURGE CURRENT,(A)

0

1 10 5

(+)

NUMBER OF CYCLES AT 60Hz

8.3ms Single Half

Sine Wave

JEDEC method

50

100

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

trr

+0.5A

0

-0.25A

-1.0A

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1cm

SET TIME BASE FOR

50 / 10ns / cm

FIG.5-TYPICAL JUNCTION CAPACITANCE

70

60

50

40

30

20

JUNCTION CAPACITANCE,(pF)

10

0

.01 .05 .1 .5 1 5 10 50 100

REVERSE VOLTAGE,(V)