Page 1
Advanced Power MOSFET
SFH9250L
FEATURES
❑ Logic-Level Gate Drive
❑ Avalanche Rugged Technology
❑ Rugged Gate Oxide Technology
❑ Lower Input Capacitances
❑ Improved Gate Charge
❑ Extended Safe Operating Area
❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V
❑ Lower R
: 0.175 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25 °C)
C
=100 °C)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy $
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 °C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8& from case for 5-seconds
T
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
, T
J
T
D
STG
L
#
#
#
%
BV
DSS
R
DS(on)
ID= -19.5 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
-200
-19.5
-12.3
-78
!20
990
-19.5
20.4
-5.0
204
1.63
- 55 to +150
300
= -200 V
= 0.23 Ω
V
A
A
V
mJ
A
mJ
V/ns
W
W/ °C
°C
Thermal Resistance
R
"JC
R
"CS
R
"JA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.24
--
0.61
--
40
°C/W
Rev. A
Page 2
SFH9250L
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
BV/,T
,
V
R
GS(th)
I
GSS
I
DSS
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(Miller) Charge
gd
(TC=25°C unless otherwise specified)
Max. UnitsTyp.Min.
V
-200
--
-1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.17
--
--
--
--
--
.175
13
2500
400
210
20
150
100
65
90
12
54
--
--
-2.0
100
-100
10
100
0.23
--
3250
520
270
50
310
210
140
120
--
--
V
V/ °C
V
nA
)A
Ω
S
pF
ns
nC
=0V,ID=-250)A
GS
I
=-250)A See Fig 7
D
V
=-5V,ID=-250)A
DS
V
=-20V
GS
VGS=20V
V
=-200V
DS
V
=-160V,TC=125 °C
DS
V
=-5V,ID=-9.8A
GS
VDS=-40V,ID=-9.8A
=0V,VDS=-25V,f =1MHz
V
GS
VDD=-100V,ID=-19.5A,
R
=6.2Ω
G
VDS=-160V,VGS=-5V,
ID=-19.5A
See Fig 6 & Fig 12
Test Condition
See Fig 5
See Fig 13
*
*
*+
*+
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
260
2.8
-19.5
-78
-1.5
--
--
I
I
SM
V
t
Q
Notes ;
# Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
$ L=3.9mH, I
% I
* Pulse Test : Pulse Width ( 300)s, Duty Cycle ( 2%
+ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current #
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-19.5A, VDD=-50V, RG=27Ω, Starting TJ =25'
AS
(-19.5A, di/dt(500A/)s, VDD(BV
SD
--
--
*
--
--
--
, Starting TJ =25'
DSS
Integral reverse pn-diode
A
in the MOSFET
V
T
ns
T
)C
di
=25 °C,IS=-19.5A,VGS=0V
J
=25 °C,IF=-19.5A,VDD=-160V
J
/dt=100A/)s
F
*
Page 3
P-CHANNEL
POWER MOSFET
SFH9250L
-
Note :
1. 250.s Pulse Te st
'
= 25
2. T
C
0
10
1
10
10
, Drain Current [A]
D
-I
10
V
Top : -10.0 V
-8.0 V
-6.0 V
-5.0 V
-4.5 V
-4.0 V
1
-3.5 V
Bottom : -3.0 V
0
-1
10
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
GS
-VDS, Drain-Source Voltage [V]
0.8
0.6
VGS = - 10V
VGS = - 5V
-
Note : T
J
= 25
'
]
Ω
, [
0.4
DS(on)
R
0.2
Drain-Source On-Resistance
0.0
0 20406080100
-ID , Drain Current [A]
1
10
'
150
0
10
'
25
, Drain Current [A]
D
-I
-1
10
246810
'
-55
-
Note
= -40V
1. V
DS
2. 250.s Pulse Test
-VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
, Reverse Drain Current [A]
DR
-I
-1
10
'
150
'
25
-
Note :
= 0V
1. V
GS
2. 250.s Pulse Test
0.6 1.2 1.8 2.4 3.0 3.6
-VSD , Source -Drain V o lta g e [V]
Capacitances [pF]
12000
10500
9000
7500
6000
4500
3000
1500
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
6
VDS = -40V
VDS = -100V
4
-
10
1
Note ;
1. V
= 0 V
GS
2. f = 1 MHz
C
iss
C
oss
C
rss
0
-1
10
0
10
2
, Gate-Source Voltage [V]
GS
-V
0
020406080100
-VDS, Drain-Source Voltage [V]
VDS = -160V
QG, Total Gate Cha rge [nC]
-
Note : I
= -19.5 A
D
Page 4
SFH9250L
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
, (Normalized)
DSS
-BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Operation in This Area
2
10
is Limited by R
-
Note :
1. VGS = 0 V
2. ID = -250 .A
2.5
2.0
1.5
, (Norma lized)
1.0
DS(ON)
R
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
DS(on)
100 µs
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
20
15
1 ms
= 25 oC
C
= 150 oC
J
10 ms
DC
2
10
10
, Drain Current [A]
D
-I
5
0
25 50 75 100 125 150
TC, Case Temperature [']
1
10
, Drain Current [A]
D
0
10
-I
-1
10
0
10
-
Notes :
1. T
2. T
3. Single Pulse
1
10
-VDS, Drain-Source Voltage [V]
-
1. V
2. I
Note :
= -5 V
GS
= -9.8 A
D
0
10
Fig 11. Thermal Response
D=0.5
-
0.2
-1
10
0.1
0.05
(t), T hermal Response
Z
0.02
JC
0.01
/
-2
10
-5
10
single pulse
-4
10
t
1
-3
10
-2
10
, S q u a re W av e P u lse D u ra tio n [s e c]
N o te s :
(t) = 0.61 '/W M a x.
1. Z
/
JC
2. D u ty F a cto r , D = t
3. TJM - TC = PDM * Z
P
DM
t
1
t
2
-1
10
10
1/t2
(t)
/
JC
0
1
10
Page 5
P-CHANNEL
POWER MOSFET
12V
200nF
-3mA
50K0
Fig 12. Gate Charge Test Circuit & Waveform
V
Same Type
GS
as DUT
300nF
V
GS
-5V
V
DS
Q
gs
DUT
Fig 13. Resistive Switching Test Circuit & Waveforms
SFH9250L
Q
g
Q
gd
Charge
-5V
-5V
R
V
DS
R
G
L
( 0.5 rated V
V
DD
DS
)
V
in
10%
DUT
V
DS
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
V
L
DS
V
DD
I
D
R
G
E
=LL I
AS
V
DD
DUT
I
AS
BV
DSS
t
d(on)tr
90%
1
---2
t
on
2
AS
t
p
I
(t)
D
t
d(off)
BV
DSS
-------------------BV
DSS
-- V
DD
Time
t
off
t
f
V
(t)
DS
Page 6
SFH9250L
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
( Driver )
DUT
+
V
DS
_
I
S
L
Driver
R
G
V
GS
D =
Compliment of DUT
(N-Channel)
• dv/dt controlled by R
•IScontrolled by pulse period
Gate Pulse Width
-------------------------Gate Pulse Period
V
DD
G
5V
I
S
( DUT )
V
DS
( DUT )
IFM, Body Diode Forward Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
di/dt
V
DD
Page 7
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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