Datasheet SFH4552, SFH495P Datasheet (Siemens)

GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter

SFH 495 P

SFH 4552

29
27

0.6

spacing

2.54 mm

1.8

1.2

Area not flat

0.6

0.4

spacing

2.54 mm

Cathode (Diode)
Collector (Transistor)

1.8

1.2

29.5

27.5

0.4

0.8

0.8

3.85

3.35

0.4

5.0

4.2

0.4

Chip positionArea not flat

6.9

6.1

5.7

5.5

4.0

3.4
Chip position

Anode

ø5.1

ø4.8

ø5.1

ø4.8

5.9

5.5

0.6

0.4

GEX06971

5.9

5.5

0.6

0.4

GEX06630

fex06971

feo06652

Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Wesentliche Merkmale

● Stimulierter Emitter mit sehr hohem

Wirkungsgrad

● Laserdiode in diffusem Gehäuse

● Besonders geeignet für Impulsbetrieb bei

hohen Strömen

● Hohe Zuverlässigkeit

● Gegurtet lieferbar

Anwendungen

● Datenübertragung

● Fernsteuerungen

● „Messen, Steuern, Regeln“

Features

● Stimulated emitter with high efficiency

● Laser diode in diffuse package

● Suitable esp. for pulse operation at high

current

● High reliability

● Available on tape and reel

Applications

● Data transfer

● Remote controls

● For drive and control circuits

Semiconductor Group 1 1998-09-18

SFH 495 P

SFH 4552

Typ
Type

Bestellnummer
Ordering Code

Gehäuse
Package

SFH 495 P Q62703-Q7891 5-mm-LED-Gehäuse (T 13/4), plan, schwarz eingefärbt,

2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß

5 mm LED package (T 13/4), flat, black colored,
spacing 2.54 mm, cathode marking: short lead.

SFH 4552 Q62702-P5054 5-mm-LED-Gehäuse (T 13/4), plan, weiß diffus eingefärbt,

2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß

5 mm LED package (T 13/4), flat, white diffuse colored,
spacing 2.54 mm, cathode marking: short lead.

Grenzwerte (TA = 25 °C)
Maximum Ratings

Bezeichnung
Description

Betriebs- und Lagertemperatur
Operating and storage temperature range

Sperrspannung

Symbol
Symbol

T

stg

T

op

V

R

Wert
Value

– 40 ... + 85

Einheit
Unit

°C

0 ... + 85
1V

Reverse voltage
Stoßstrom, tp = 200 µs, D = 0

Surge current
Verlustleistung

Power dissipation
Wärmewiderstand

Thermal resistance

Kennwerte (TA = 25 °C)
Characteristics

Bezeichnung
Description

Wellenlänge der Strahlung
Wavelength at peak emission

I

= 200 mA, tp = 20 ms

F

Spektrale Bandbreite bei 50 % von I
Spectral bandwidth at 50 % of I

I

= 200 mA

F

max

max

I

FSM

P

tot

R

thJA

Symbol
Symbol

λ

peak

1A

160 mW

450 K/W

Wert
Value

Einheit
Unit

940 nm

∆λ 4nm

Semiconductor Group 2 1998-09-18

Kennwerte (TA = 25 °C)
Characteristics

SFH 495 P

SFH 4552

Bezeichnung
Description

Abstrahlwinkel
Half angle
SFH 495 P
SFH 4552

Schaltzeiten, Ie von 10 % auf 90 % und von
90 % auf 10 %, bei IF = 200 mA, RL = 50 Ω
Switching times, Ie from 10 % to 90 % and
from 90 % to10 %, IF = 200 mA, RL = 50 Ω

Kapazität
Capacitance

V

= 0 V, f = 1 MHz

R

Durchlaßspannung
Forward voltage

I

= 1 A, tp = 100 µs V

F

Schwellenstrom
Threshold current

1)

1)

Gesamtstrahlungsfluß
Total radiant flux

I

= 1 A, tp = 10 µs

F

Strahlstärke
Radiant intensity

I

= 1 A, tp = 10 µs

F

SFH 495 P
SFH 4552

Symbol
Symbol

ϕ

t

, t

r

f

C

o

F

I

th

Φ

e

I

e

Wert
Value

Einheit
Unit

Grad
deg.

± 30
± 50

7ns

90 pF

2.1 V
< 150 mA

700 mW

mW/sr

400
200

1)

Remark: This IRED works efficiently at forward currents higher than Ith.

Warning:
This data sheet refers to high power infrared emitting semiconductors.

Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit
luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1.

When operating powerful emitters, care should be taken to comply with IEC 825.1 to mini­mize any possible eye hazard:

- Use lowest possible drive level

- Use diffusing optics where possible

- Avoid staring into powerful emitters or connected fibers

Semiconductor Group 3 1998-09-18

SFH 495 P

SFH 4552

Radiant intensity

I

= f (IF)

e

160

%

Ι

e

140

120

100

80

60

40

20

0

0 2.0A

0.4 0.8 1.2 1.6

OHF00328

Ι

F

Radiation characteristics SFH 495 P I

10203040

ϕ

50

Forward current

I

= f (VF)

F

2.0
A

Ι

F

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

= f (ϕ)

rel

0

1.0

0.8

OHF00329

0

1.4 2.4V

1.6 1.8 2.0 2.2

V

OHF00330

F

60

70

80

90

100

Radiation characteristics SFH 4552 I

10203040

ϕ

50

60

70

80

90

rel

0.6

0.4

0.2

0

02040 60 80 100 1200.40.60.81.0

= f (ϕ)

0

1.0

0.8

0.6

0.4

0.2

0

OHF00441

100

02040 60 80 100 1200.40.60.81.0

Semiconductor Group 4 1998-09-18