Page 1
Semiconductor Group 1 02.97
Laser Diode in TO-220 Package SPL 2Yxx
1.0 W cw (Class 4 Laser Product) (SFH 4874x1)
Features
•
Efficient radiation source for pulsed and cw-operation
•
Reliable InGa(Al)As strained layer quantum-well material
•
Small TO-220 package with efficient thermal coupling
•
Includes thermistor to control temperature/wavelength
•
Single emitting area 200 µm × 1 µm
•
Cylindrical correction for a near circular farfield pattern
Applications
•
Pumping solid state lasers (Nd: YAG, Yb: YAG, …)
•
Medical applications
•
Laser soldering
•
Energy transmission
•
Testing and measuring applications
Type
Old Type
(as of Oct. 1996)
Wavelength
*)
Ordering Code
SPL 2Y81
SPL 2Y85
SPL 2Y94
SPL 2Y98
SFH 487401
SFH 487421
SFH 487441
–
808 nm
850 nm
940 nm
980 nm
Q62702-P367
Q62702-P1677
Q62702-P1630
on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(
T
A
= 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Output power (continuous wave)
1)
P
opt
– – 1.1 W
Output power (quasi-continuous wave)
1)
(
t
p
≤ 150 µs, duty cycle ≤ 1%)
P
qcw
– – 1.5 W
Reverse voltage
V
R
––3V
Operating temperature
T
op
– 10 … + 60 °C
Storage temperature
T
stg
– 40 … + 85 °C
Maximum soldering temperature, max. 5 s
T
s
– – 250 °C
1) Optical power measurements refer to a detector with NA = 0.6
Page 2
SPL 2Yxx
(SFH 4874x1)
Semiconductor Group 2
Diode Characteristics
(TA = 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Emission wavelength
1)
λ
peak
803
840
935
808
850
940
813
860
945
nm
Spectral width (FWHM)
1)
∆λ 2nm
Output power
2)
P
opt
1.0 W
Differential efficiency 2) 808 nm
850 nm
940 nm
η 0.75
0.75
0.70
0.95
0.85
0.80
1.1
1.0
0.9
W/A
Threshold current 808 nm
850 nm
940 nm
I
th
0.40
0.30
0.30
0.45
0.40
0.35
0.55
0.50
0.40
A
Operating current 1) 808 nm
850 nm
940 nm
I
op
1.3
1.3
1.4
1.5
1.5
1.6
1.8
1.8
1.8
A
Operating voltage
1)
V
op
2.0 V
Differential series resistance r
s
– 0.2 0.4 Ω
Characteristic temperature (threshold)
3)
T
0
150 K
Temperature coefficient of operating
current
∂
I
op
/ ∂
T 0.5 %/K
Temperature coefficient of wavelength
4)
∂λ / ∂
T 0.25 0.27 0.30 nm/K
Thermal resistance (junction → heat sink) R
th JA
10 K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(
T
2
) =
I
th
(
T
1
) × exp(
T
2
–
T
1
)/
T
0
4) Depending on emission wavelength
NTC Thermistor
Parameter
Symbol Typ. Values Unit
Resistance at room temperature (25 °C) R
NTC
10 kΩ
Page 3
SPL 2Yxx
(SFH 4874x1)
Semiconductor Group 3
Optical Characteristics (TA = 25 °C)
Radiant Power P
opt
vs I
F
Mode Spectrum I
rel
vs λ (P
opt
= 1.0 W)
Farfield Distribution
Parallel to Junction I
rel
vs θ
||
Farfield Distribution
Perpendicular to Junction I
rel
vs θ
⊥
Page 4
SPL 2Yxx
(SFH 4874x1)
Semiconductor Group 4
Notes for Operation
1. Eye Protection
This laser is a Class 4 Laser product.
Refer to the relevant safety regulations for protection during handling and operation.
2. Overload Protection
The specified values are valid as long as the diode has not been not overloaded. Voltage
spikes from the power supply unit, even when applied for nanoseconds only, may cause irreversible damage to the laser diode. Such spikes may occur when the power supply is turned
on or off, or they may reach the laser diode from the line via the coupling capacitance of
electronically controlled devices.
The power supply should therefore be provided with appropriate protection circuits.
Handling Notes
1. Package
To avoid electrostatic damage it is recommended to observe the same rules as for handling
MOS-devices.
2. Mechanical Attachment
2.1 Mounting hole (suitable for M 2.5)
Because of the good thermal conductivity of the TO 220 base plate (copper) the heat
loss is properly dissipated even if the component is attached on one side only. Some
mounting techniques are shown below (Fig. 1 – 3).
2.2 For exact positioning of the TO component and other parts, e.g. lenses, the TO 220
package can be attached with appropriate clamping devices or screws (max. M 2.5).
3. Soldering
When soldering the TO base to a heat sink, do not exceed the following limits:
• max. soldering temperature: 125 °C
• max. soldering time: 1 min.
Page 5
SPL 2Yxx
(SFH 4874x1)
Semiconductor Group 5
Mounting Techniques
Figure 1
Figure 2
Figure 3
Page 6
SPL 2Yxx
(SFH 4874x1)
Semiconductor Group 6
Package Outlines
(Dimensions in mm, unless specified).
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