Datasheet SFH 4730, SFH 4740 Datasheet (OSRAM)

Ostar Observation

Lead (Pb) Free Product - RoHS Compliant

SFH 4730, SFH 4740

SFH 4730

SFH 4730

• Schwarzer Rahmen zur Streulichtminimierung

•3 W optische Leistung

SFH 4740

• Weißer Rahmen für hohe Lichtleistung

•3.6 W optische Leistung

Wesentliche Merkmale

• Aktive Chipfläche 2.1 x 5.4 mm

2

• max. Gleichstrom 1 A

• niedriger Wärmewiderstand (2.8 K/W)

• Emissionswellenlänge 850 nm

• ESD-sicher bis 2 kV nach JESD22-A114-B

• Augensicherheitsrichtlinien der IEC-Normen
60825-1 und 62471 müssen beachtet werden.

SFH 4740

SFH 4730

• Black frame to minimize scattered light

•3 W optical power

SFH 4740

• White frame to achieve high optical power

•3.6 W optical power

Features

• Active chip area 2.1 x 5.4 mm2

• max. DC-current 1 A

• Low thermal resistance (2.8 K/W)

• Spectral emission at 850 nm

• ESD save up to 2 kV acc. to JESD22-A114-B

• Eye safety precautions given in IEC 60825-1
and IEC

62471 have to be followed.

Anwendungen

• Infrarotbeleuchtung für CMOS Kameras

• Überwachungssysteme

• IR-Datenübertragung

• Fahrer-Assistenz Systeme

Typ
Type

Bestellnummer
Ordering Code

Strahlstärke1) (IF = 1A, tp = 20 ms)
Radiant intensity

Applications

• Infrared Illumination for CMOS cameras

• Surveillance systems

• IR Data Transmission

• Driver assistance systems

1)

Ιe (mW/sr)

SFH 4730 Q65110A5452 typ.1000
SFH 4740 Q65110A6190 typ.1200

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr.

2007-08-13 1

Grenzwerte Maximum Ratings

SFH 4730, SFH 4740

Bezeichnung
Parameter

Betriebs- und Lagertemperatur
Operating and storage temperature range

Sperrschichttemperatur
Junction temperature

Sperrspannung
Reverse voltage

Vorwärtsgleichstrom, T

1)

≤ 85 °C

B

Forward current
Stoßstrom, tp < 1 ms, D = 0.2, TB ≤ 85 °C

Surge current
Leistungsaufnahme, TB ≤ 85 °C

Power consumption
Thermische Verlustleistung, TB ≤ 85 °C

Thermal power-dissipation
Wärmewiderstand Sperrschicht / Bodenplatte

Thermal resistance Junction / Base plate

Symbol
Symbol

T

, T

B, op

T

J

V

R

I

F

I

FSM

P

tot

P

th

R

thJB

B, stg

Wert
Value

Einheit
Unit

– 40 … + 125 °C

+ 145 °C

0.5 V

1 A

2 A

24 W

21 W

2.8 K/W

1)

T

= Temperatur auf der Rückseite der Metallkernplatine / Temperature at the backside of the base plate.

B

2007-08-13 2

Kennwerte (TB = 25 °C) Characteristics

SFH 4730, SFH 4740

Bezeichnung
Parameter

Wellenlänge der Strahlung

Symbol
Symbol

λ

peak

Wavelength at peak emission

I

= 1 A, tp = 10 ms

F

Schwerpunkts-Wellenlänge der Strahlung

λ

centroid

Centroid wavelength

I

= 1 A, tp = 10 ms

F

Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I

IF = 1 A, t

= 10 ms

p

max

Abstrahlwinkel

max

∆λ 40 nm

ϕ ± 60 Grad

Half angle
Abmessungen der aktiven Chipfläche1)

Dimension of the active chip area
Schaltzeiten, Ie von 10% auf 90% und von 90%

I

auf 10%,

= 1 A, RL = 50 Ω

F

L × B
L × W

t

, t

r

f

Switching times, Ιe from 10% to 90% and from

I

90% to 10%,
Durchlassspannung

= 1 A, RL = 50 Ω

F

V

F

Forward voltage

I

= 1 A, tp = 100 µs

F

Gesamtstrahlungsfluss
Total radiant flux

I

= 1 A, tp = 100 µs

F

SFH 4730
SFH 4740

Temperaturkoeffizient von Ie bzw. Φ
Temperature coefficient of Ie or Φ

I

= 1 A, tp = 10 ms

F

Temperaturkoeffizient von V
Temperature coefficient of V

I

= 1 A, tp = 10 ms

F

e

F

F

Temperaturkoeffizient von λ

e

Φ
Φ

TC

TC

TC

e

e

I

V

λ,centroid

Temperature coefficient of λ

I

= 1 A, tp = 10 ms

F

1)

Die aktive Chipfläche besteht aus 10 einzelnen Chips mit je 1 x 1 mm².
The active chip area consists of 10 single chips with 1 x 1 mm² each.

Wert
Value

Einheit
Unit

850 nm

845 nm

deg.

2.1 × 5.4 mm²

10 ns

18 (≤ 24) V

3

3.6

W
W

– 0.5 %/K

– 2 mV/K

+ 0.2 nm/K

2007-08-13 3

Strahlstärke1) Ι

e

Radiant Intensity1) Ι

Bezeichnung
Parameter

SFH 4730, SFH 4740

e

Symbol Werte

Values

Einheit
Unit

SFH

4730-EA

Strahlstärke
Radiant Intensity

I

= 1 A, tp = 20 ms

F

1)

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1)
Only one group in one packing unit (variation lower 1.6:1)

Ι

e min

Ι

e max

630
1000

4730-EB

800
1250

Abstrahlcharakteristik
Radiation Characteristics I

50˚

60˚

= f (ϕ)

rel

0˚10˚20˚40˚ 30˚

ϕ

1.0

0.8

0.6

SFH

SFH

4740-EB

800
1250

OHL01660

SFH

4740-FA

1000
1600

mW/sr
mW/sr

0.4

70˚

80˚

90˚

100˚

1.0 0.8 0.6 0.4

2007-08-13 4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

SFH 4730, SFH 4740

Relative spektrale Emission
Relative Spectral Emission

I

= f (λ), TB = 25 °C

rel

100

%

I

rel

80

60

40

20

0

700

OHL01714

nm

λ

950750 800 850

Max. zulässiger Durchlassstrom
Max. Permissible Forward Current

I

= f (TB), R

F

= 2.8 K/W

thJB

Durchlassstrom
Forward Current

I

Single pulse, tp = 100 µs

Zulässige Impulsbelastbarkeit
Permissible Pulse Handling
Capability

Duty cycle D = parameter

1200

mA

I

F

800

600

400

200

0

0˚C

20 40 60 80 100 130

OHF02973

T

B

= f (VF), TB = 25 °C,

F

1

10

A

I

F

0

10

-1

10

-2

10

10 12

2.3
A

I

F

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

14 16 18 20 22V

I

= f (tp), T

F

10 10 10 10

D

=

≤ 85 °C,

B

t

t

P

T

-2-3-4-5-6

1010

P

T

10

OHF02930

V

F

OHF02974

=

D

0.005

0.01

0.02

0.05

0.1

0.2

0.35

0.5
1

s

t

p

Relativer Gesamtstrahlungsfluss
Relative Total Radiant Flux

Φe/Φe(1000mA) = f (IF), TB = 25 °C,
Single pulse, tp = 100 µs

10

3

OHF02931

mA

I

F

4

1055

Φ

e

Φ

e (1000 mA)

1

10

0

10

5

-1

10

5

-2

10

5

-3

10

12

10 10

I

F

10

20-1

2007-08-13 5

SMD NTC Thermistor mit Nickel Barrier Termination, Typ 0603
SMD NTC Thermistor with Nickel Barrier Termination, Type 0603

SFH 4730, SFH 4740

No. of R/T

R

25

B

25/50

B

25/85

characteristics

[Ω]

[K]

[K]

EPCOS 8502 / A01 10k ± 5% 3940 3980 4000

Typische Thermistor Kennlinie
Typical Thermistor Graph

10

6

OHL02893

Ω

R

5

10

5

4

10

5

B

25/100

[K]

3

10

5

2

10

-60 ˚C

2007-08-13 6

-20 20 60 100 160

T

NTC

(www.epcos.com)

Maßzeichnung und Ersatzschaltbild
Package Outlines and equivalent circuit diagram

Frame color: black for SFH4730

SFH 4730, SFH 4740

white for SFH4740

Maße in mm (inch) / Dimensions in mm (inch).

Verwendeter Stecker / Used male connector on board:

ERNI male connector SMD 214012, 4-pins (www.erni.com)

Empfohlene Gegenstecker / Recommended female connector for power supply:

ERNI female connector SMD 214025, 4-pins (www.erni.com)

Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components

1

A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2

Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

1

, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

2007-08-13 7