Page 1
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäu se
GaAlAs Infrared Emitter in SMT Package
Lead (Pb) Free Product - RoHS Compliant
SFH 421
SFH 426
SFH 421 SFH 426
Wesentliche Merkmale
• GaAIAs-LED mit sehr hohem Wirkungsgrad
• Gute Linearität (Ie = f [IF]) bei hohen Strömen
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Oberflächenmontage geeignet
• Gegurtet lieferbar
•SFH 421 Gehäusegleich mit SFH 320
SFH 426 Gehäusegleich mit SFH 325
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
Features
• Very highly efficient GaAIAs-LED
• Good Linearity (Ie = f [IF]) at high currents
• DC (with modulation) or pulsed operations are
possible
• High reliability
• High pulse handling capability
• Suitable for surface mounting (SMT)
• Available on tape and reel
•SFH 421 same package as SFH 320
SFH 426 same package as SFH 325
Applications
• Miniature photointerrupters
• Industrial electronics
• For drive and control circuits
• Automotive technology
• Sensor technology
• Alarm and safety equipment
• IR free air transmission
Typ
Type
SFH 421 Q65110A1218
SFH 426 Q65110A2512 SIDELED
2005-02-21 1
Bestellnummer
Ordering Code
Gehäuse
Package
Kathodenkennzeichnung: abgesetzte Ecke
cathode marking: bevelled edge
TOPLED
®
®
Page 2
Grenzwerte (TA = 25 °C) Maximum Ratings
SFH 421, SFH 426
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Durchlassstrom
Forward current
Stoßstrom, τ = 10 µs, D = 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm
2
Thermal resistance junction - ambient mounted
2
on PC-board (FR4), padsize 16 mm
each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
Symbol
Symbol
T
; T
op
stg
V
R
I
F
I
FSM
P
tot
R
thJA
R
thJS
Wert
Value
Einheit
Unit
– 40 … + 100 °C
5 V
100 mA
2.5 A
180 mW
450
≈ 200
K/W
K/W
2005-02-21 2
Page 3
Kennwerte (TA = 25 °C) Characteristics
SFH 421, SFH 426
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
= 100 mA, tp = 20 ms
F
Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I
max
max
IF = 100 m A
Abstrahlwinkel
Half angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
Schaltzeiten, Ie von 10% auf 90% und von 90%
I
auf 10%, bei
Switching times, Ιe from 10% to 90% and from
90% to 10%,
Kapazität
Capacitance
V
= 0 V, f = 1 MHz
R
Durchlassspannung
Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom
Reverse current
V
= 5 V
R
Gesamtstrahlungsfluss
Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von Ie bzw. Φe,
I
= 100 mA
F
Temperature coefficient of Ie or Φe, IF = 100 mA
= 100 mA, RL = 50 Ω
F
I
= 100 mA, RL = 50 Ω
F
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
880 nm
∆λ 80 nm
ϕ ± 60 Grad
deg.
A
L × B
0.09 mm
0.3 × 0.3 mm
2
L × W
t
, t
r
C
V
V
I
R
Φ
TC
f
o
F
F
e
I
0.5 µs
15 pF
1.5 (≤ 1.8)
3.0 (≤ 3.8)
V
V
0.01 (≤ 1) µA
23 mW
– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
TC
Temperature coefficient of VF, IF = 100 mA
Temperaturkoeffizient von λ, IF = 100 mA
TC
Temperature coefficient of λ, IF = 100 mA
2005-02-21 3
V
λ
– 2 mV/K
+ 0.25 nm/K
Page 4
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
SFH 421, SFH 426
Bezeichnung
Parameter
Strahlstärke
Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
Radiant intensity
I
= 1 A, tp = 100 µs
F
Symbol Werte
Values
I
e min
I
e typ
I
e typ
4
7
48 mW/sr
Einheit
Unit
mW/sr
mW/sr
2005-02-21 4
Page 5
Relative Spectral Emissi on
I
= f (λ)
rel
100
%
Ι
rel
80
OHR00877
Ι
e
Radiant Intensity
Ι
e
100 mA
= f (I
F
Single pulse, tp = 20 µs
OHR00878
Ι
e
Ι
e
(100mA)
2
10
1
10
SFH 421, SFH 426
)
Max. Permissible Forward Current
I
= f (TA)
F
120
mA
Ι
F
100
OHR00883
60
40
20
0
800 850 900 950 nm 1000
750
λ
Forward Current
I
= f (VF) single pulse, tp = 20 µs
F
1
10
A
Ι
F
0
10
-1
10
-2
10
-3
10
0123456V8
OHR00881
V
F
Radiation Characteristics Sel = f (ϕ)
ϕ
0
10
-1
10
-2
10
-3
10
0
10 10110
2
Permissible Pulse Handling
Capability IF = f (tp), TA = 25 °C
duty cycle D = parameter
4
10
mA
Ι
F
0˚10˚20˚40˚ 30˚
1.0
D
0.005=
0.01
0.02
0.05
3
10
0.1
0.2
0.5
DC
2
10
t
p
t
p
=D
T
1
10
-5
10 s
10-410-310-210-110010110
T
10
Ι
F
OHL01660
3
Ι
F
OHR00886
t
p
80
R
= 450 K/W
thjA
60
40
20
0
0
104mA
2
20 40 60 80 100 120
˚C
T
A
50˚
60˚
70˚
80˚
90˚
0.8
0.6
0.4
0.2
0
100˚
1.0 0.8 0.6 0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
2005-02-21 5
Page 6
Maßzeichnung Package Outlines
SFH 421
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
0.1 (0.004) (typ.)
SFH 421, SFH 426
2.1 (0.083)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
SFH 426
3.0 (0.118)
3.4 (0.134)
Cathode marking
2.8 (0.110)
2.4 (0.094)
Cathode
(2.4) (0.095)
(2.4 (0.094))
2.54 (0.100)
spacing
4˚±1
3.3 (0.130)
3.7 (0.146)
1.1 (0.043)
0.18 (0.007)
0.12 (0.005)
4.2 (0.165)
3.8 (0.150)
1.1 (0.043)
0.9 (0.035)
Anode
0.5 (0.020)
0.7 (0.028)
A
C
0.6 (0.024)
0.4 (0.016)
GPLY6724
(2.85 (0.112))
Cathode marking
(1.4 (0.055))
(R1)
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
AC
(2.9 (0.114))
4.2 (0.165)
3.8 (0.150)
Maße werden wie folgt ange geben: mm (inch) / Dimensions are s pecified as follows: mm (inch).
2005-02-21 6
GPLY6880
Page 7
Empfohlenes Lötpaddesign IR-Reflow Löten Recommended Solder Pad IR Reflow Soldering
SFH 421
2.6 (0.102)
2.6 (0.102)
SFH 421, SFH 426
SFH 426
1.5 (0.059)
Padgeometrie für
verbesserte Wärmeableitung
Paddesign for
improved heat dissipation
4.5 (0.177)
Lötstopplack
Solder resist
3.7 (0.146)
3.0 (0.118)
1.2 (0.047)
4.5 (0.177)
1.5 (0.059)
Cu-Fläche > 16 mm
Cu-area > 16 mm
2
2
OHLPY970
Padgeometrie
für verbesserte
Wärmeableitung
Paddesign
for improved
heat dissipation
Cu-Fläche > 16 mm
Cu-area > 16 mm
2
2
Lötstopplack
Solder resist
2005-02-21 7
OHLPY965
Page 8
SFH 421, SFH 426
Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
255 ˚C
240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
10 s min
30 s max
150
120 s max
100 s max
Ramp Down
6 K/s (max)
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
t
Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)
OHLA0687
260 ˚C
245 ˚C
235 ˚C
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
s
300
C
250
T
235 C
200
150
100
50
0
0
C... 260
1. Welle
1. wave
ca 200 K/s
CC... 130100
50 100 150 200 250
10 s
Zwangskühlung
2 K/s
forced cooling
5 K/s
2005-02-21 8
2. Welle
2. wave
OHLY0598
Normalkurve
standard curve
Grenzkurven
limit curves
2 K/s
s
t
Page 9
SFH 421, SFH 426
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and sha ll not be c ons idered as assured characte ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances . For in fo rmation on the types in question ple as e c ont ac t our Sales Organization.
Packing
Please use the recycling operators k nown to you . We can als o help you – get in touch wit h your near est sales offic e.
By agreement we will take p acking material back, if it is sorted. You m ust bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-su pport devices or systems must be expressly authorized fo r such purpose! Critical
components
1
A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in
and sustain human life. If th ey fail , it is rea so nable to assume that the health of the us er m ay be endangered.
2005-02-21 9
Loading...