Datasheet SFH 4258, SFH 4259 Datasheet (OSRAM)

Page 1
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4258 SFH 4259

Wesentliche Merkmale

Infrarot LED mit hoher Ausgangsleistung
Emissionswellenlänge typ. 850 nm
Hohe Bestromung bei hohen Temperaturen möglich

Anwendungen

Infrarotbeleuchtung für CMOS Kameras
IR-Datenübertragung
Sensorik

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Normen 60825-1 und 62471 behandelt werden.

Features

High Power Infrared LED
Peak wavelength typ. 850 nm
Half angle SFH 4258: ± 15°
Half angle SFH 4259: ± 25°
High forward current allowed at high temperature

Applications

Infrared Illumination for CMOS cameras
IR Data Transmission
Optical sensors

Safety Advices

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Typ Type
SFH 4258 Q65110A2975 40 (typ. 90)
SFH 4259 Q65110A2464 25 (typ. 55)
1)
gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
2007-04-25 1
Bestellnummer Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping
Ie (mW/sr)
1)
Page 2

Grenzwerte (TA = 25 °C) Maximum Ratings

SFH 4258, SFH 4259
Bezeichnung Parameter
Betriebs- und Lagertemperatur Operating and storage temperature range
Sperrspannung Reverse voltage
Vorwärtsgleichstrom Forward current
Stoßstrom, tp = 100 µs, D = 0 Surge current
Verlustleistung Power dissipation
Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm
2
Thermal resistance junction - ambient mounted
2
on PC-board (FR4), padsize 16 mm
each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block
Symbol Symbol
Top , T
V
I
I
P
R
stg
R
F
FSM
tot
thJA
R
thJS
Wert Value
Einheit Unit
– 40 + 100 °C
5 V
100 mA
1.5 A
180 mW
300
140
K/W
K/W

Kennwerte (TA = 25 °C) Characteristics

Bezeichnung Parameter
Wellenlänge der Strahlung Wavelength at peak emission
I
= 100 mA
F
Spektrale Bandbreite bei 50% von I Spectral bandwidth at 50% of I
max
IF = 100 mA
Abstrahlwinkel Half angle SFH 4258 SFH 4259
Aktive Chipfläche Active chip area
max
Symbol Symbol
λ
peak
Wert Value
Einheit Unit
850 nm
∆λ 35 nm
ϕ ϕ
A
± 15 ± 25
Grad deg.
0.09 mm
2
2007-04-25 2
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Kennwerte (TA = 25 °C) Characteristics (cont’d)
SFH 4258, SFH 4259
Bezeichnung Parameter
Abmessungen der aktiven Chipfläche Dimension of the active chip area
Schaltzeiten, Ie von 10% auf 90% und von 90%
I
auf 10%, bei
= 100 mA, RL = 50
F
Switching times, Ιe from 10% to 90% and from
I
90% to 10%,
= 100 mA, RL = 50
F
Durchlassspannung Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom Reverse current
V
= 5 V
R
Gesamtstrahlungsfluss Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von Ie bzw. Φe,
I
= 100 mA
F
Temperature coefficient of Ie or Φe, IF = 100 mA
Symbol Symbol
L × B L × W
t
, t
r
f
V
F
V
F
I
R
Φ
e typ
TC
I
Wert Value
Einheit Unit
0.3 × 0.3 mm²
12 ns
1.5 (< 1.8)
2.4 (< 3.0)
not designed for
V V
µA reverse operation
45 mW
– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA
Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA
TC
TC
V
λ
– 0.7 mV/K
+ 0.2 nm/K
2007-04-25 3
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SFH 4258, SFH 4259
Strahlstärke Ie in Achsrichtung
1)
gemessen bei einem Raumwinkel = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Symbol Werte
Parameter
SFH 4258-USFH 4258-VSFH 4258
Strahlstärke Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
I
e min
I
e max
I
e typ.
40 80
400 600 800 mW/sr
Radiant intensity
I
= 1A, tp = 100 µs
F
SFH 4259-TSFH 4259
Strahlstärke Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
I
e min
I
e max
I
e typ.
25 50
250 350 mW/sr
Radiant intensity
I
= 1A, tp = 100 µs
F
1)
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1)
Values
63 125
40 80
-U
100 200
Einheit Unit
-AW
mW/sr mW/sr
mW/sr mW/sr
2007-04-25 4
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Abstrahlcharakteristik Radiation Characteristics I
= f (ϕ)
rel
SFH 4258, SFH 4259
SFH 4258
50˚
60˚
70˚
80˚
90˚
100˚
1.0 0.8 0.6 0.4
Abstrahlcharakteristik Radiation Characteristics I
SFH 4259
50˚
= f (ϕ)
rel
10˚20˚40˚ 30˚
ϕ
1.0
0.8
0.6
0.4
0.2
0
0 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
10˚20˚30˚40˚
ϕ
1.0
0.8
OHL00021
OHL00999
60˚
70˚
80˚
90˚
100˚
0.6
0.4
0.2
0
20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
2007-04-25 5
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Relative Spectral Emission
I
= f (λ)
rel
100
%
I
rel
80
60
40
20
OHL01714
I
e
Radiant Intensity
I
e
100 mA
= f (I
F
Single pulse, tp = 20 µs
OHL01715
I
I
e (100 mA)
1
10
e
0
10
5
-1
10
5
-2
10
5
SFH 4258, SFH 4259
)
Max. Permissible Forward Current
I
= f (TA), R
F
120
mA
100
I
F
80
60
40
20
= 300 K/W
thJA
OHL01716
0
700
Forward Current IF = f (VF) Single pulse, tp = 20 µs
0
10
A
I
F
-1
10
5
-2
10
5
-3
10
5
-4
10
0.5 1 1.5 2 2.5 V3
0
nm
950750 800 850
λ
OHL01713
V
F
-3
10
0
10
1
10
2
10
Permissible Pulse Handling Capability
I
= f (τ), TA 65 °C,
F
duty cycle D = parameter
1010 1010 10
t
T
P
=
OHF02505
t
P
T
10 10s10
t
1.6 A
I
F
1.4
1.2
1.0
0.8
0.6
0.4
D
=
D
0.005
0.01
0.02
0.033
0.05
0.1
0.2
0.5 1
0.2
0
I
mA
p
0
20
3
1055
F
I
F
210-1-2-3-4-5
0
40 60 80 120
˚C
T
A
2007-04-25 6
Page 7

Maßzeichnung Package Outlines

SFH 4258, SFH 4259
SFH 4258
SFH 4259
0.8 (0.031)
0.6 (0.024)
3.4 (0.134)
3.0 (0.118)
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
34
12
Package marking
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
34
(2.4) (0.095)
3.7 (0.146)
4˚±1
0.1 (0.004) typ
3.3 (0.130)
1.1 (0.043)
0.5 (0.020)
3.8 (0.150) max.
2.1 (0.083)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
0.6 (0.024)
0.18 (0.007)
0.13 (0.005)
0.4 (0.016)
3.5 (0.138) max.
2.1 (0.083)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
ø2.55 (0.100)
ø2.60 (0.102)
GPLY6127
4˚±1
0.1 (0.004) typ
3.4 (0.134)
3.0 (0.118)
12
Package marking
(2.4) (0.095)
3.7 (0.146)
3.3 (0.130)
1.1 (0.043)
0.18 (0.007)
0.5 (0.020)
0.13 (0.005)
0.6 (0.024)
0.4 (0.016)
GPLY6128
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package Topled mit Linse, klarer Verguss / Topled with lens, clear resin
Anschlussbelegung pin configuration
1 = Kathode / cathode 2/3/4 = Anode / anode
2007-04-25 7
ø2.55 (0.100)
ø2.60 (0.102)
Page 8

Empfohlenes Lötpaddesign Reflow Löten Recommended Solder Pad Design Reflow Soldering

Padgeometrie für verbesserte Wärmeableitung
Paddesign for improved heat dissipation
2.3 (0.091)
0.8 (0.031)
1.1 (0.043)
3.7 (0.146)
0.7 (0.028)
1.5 (0.059)
3.3 (0.130)
3.3 (0.130)
SFH 4258, SFH 4259
11.1 (0.437)
Cu Fläche / 16 mm per pad Cu-area
Lötstoplack Solder resist

Empfohlenes Lötpaddesign Wellenlöten TTW Recommended Solder Pad Design TTW Soldering

6.1 (0.240)
2.8 (0.110)
2 (0.079)
1 (0.039)
6 (0.236)
2 (0.079)
3 (0.118)
Padgeometrie für verbesserte Wärmeableitung
Paddesign for improved heat dissipation
2.8 (0.110)
Lötstoplack Solder resist
0.5 (0.020)
2
_
<
OHFP3021
2 (0.079)
PCB-direction
Bewegungsrichtung
der Platine
Cu Fläche / > 16 mm per pad
2
Cu-area
OHPY3040
2007-04-25 8
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SFH 4258, SFH 4259

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)

300
˚C
250
T
255 ˚C 240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
10 s min
30 s max
150
120 s max
100 s max
Ramp Down 6 K/s (max)
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
t

Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)

OHLA0687
260 ˚C 245 ˚C 235 ˚C
+0 ˚C
-5 ˚C ±5 ˚C
+5 ˚C
-0 ˚C
s
300
C
250
T
235 C
200
150
100
50
0
0
C... 260
1. Welle
1. wave
ca 200 K/s
CC... 130100
50 100 150 200 250
10 s
Zwangskühlung
2 K/s
forced cooling
5 K/s
2007-04-25 9
2. Welle
2. wave
OHLY0598
Normalkurve standard curve
Grenzkurven limit curves
2 K/s
s
t
Page 10
SFH 4258, SFH 4259
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-25 10
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