Datasheet SFH 4250 Datasheet (OSRAM)

Infrarot-LED mit hoher Ausgangsleistung
High Power Infrared LED

Lead (Pb) Free Product - RoHS Compliant

SFH 4250

preliminary data / vorläufige Daten

Wesentliche Merkmale

• Infrarot LED mit sehr hoher Ausgangsleistung

• Emissionswellenlänge typ. 850nm

• Hohe Bestromung bei hohen Temperaturen
möglich

Anwendungen

• Infrarotbeleuchtung für CMOS Kameras

• IR-Datenübertragung

• Sensorik

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Norm 60825-1 behandelt
werden.

Features

• High Power Infrared LED

• Peak wavelength typ. 850nm

• High forward current allowed at high
temperature

Applications

• Infrared Illumination for CMOS cameras

• IR Data Transmission

• optical sensors

Safety Advices

Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 “Safety of laser products”.

Typ
Type

SFH 4250 Q65110A2465 ≥ 10 (typ. 15)

1)

gemessen bei einem Raumwi nkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr

ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device

2005-02-21 1

Bestellnummer
Ordering Code

Strahlstärkegruppierung1) (IF = 100mA, tp = 20 ms)
Radiant Intensity Grouping

Ie (mW/sr)

1)

Vorläufige Daten / Preliminary Data SFH 4250

Grenzwerte Maximum Ratings

Bezeichnung
Parameter

Betriebstemperatur
Operating temperature range

Lagertemperatur
Storage temperature range

Sperrspannung
Reverse voltage

Vorwärtsgleichstrom, TA ≤ 65 °C
Forward current

Stoßstrom, tp = 10 µs, D = 0, TA = 25 °C
Surge current

Verlustleistung TA = 25 °C
Power dissipation

Wärmewiderstand
Thermal resistance
Sperrschicht/Umgebung
Junction/ambient
Sperrschicht/Lötpad
Junction/soldering point
Montage auf PC-Board FR 4

2

(Padgröße

≥ 16 mm

)

mounted on PC board FR 4 (pad size ≥ 16 mm 2)

Symbol
Symbol

T

op

T

stg

V

R

I

F

I

FSM

P

tot

R

thJA

R

thJS

Wert
Value

Einheit
Unit

– 40 … + 100 °C

– 40 … + 100 °C

3 V

100 mA

1.5 A

180 mW

300

140

K/W

K/W

Kennwerte (TA = 25 °C) Characteristics

Bezeichnung
Parameter

Wellenlänge der Strahlung
Wavelength at peak emission

I

= 100 mA

F

Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I

max

max

Symbol
Symbol

λ

∆λ 35 nm

IF = 100 mA

Abstrahlwinkel
Half angle

Aktive Chipfläche
Active chip area

2005-02-21 2

ϕ ± 60 Grad

A

peak

Wert
Value

Einheit
Unit

850 nm

deg.

0.09 mm

2

Vorläufige Daten / Preliminary Data SFH 4250

Kennwerte (TA = 25 °C)
Characteristics (cont’d)

Bezeichnung
Parameter

Abmessungen der aktiven Chipfläche
Dimension of the active chip area

Schaltzeiten, Ie von 10% auf 90% und von 90%

I

auf 10%, bei

= 100 mA, RL = 50 Ω

F

Switching times, Ιe from 10% to 90% and from

I

90% to 10%,

= 100 mA, RL = 50 Ω

F

Durchlassspannung
Forward voltage

I

= 100 mA, tp = 20 ms

F

I

= 1 A, tp = 100 µs

F

Sperrstrom
Reverse current

V

= 3 V

R

Gesamtstrahlungsfluss
Total radiant flux

I

= 100 mA, tp = 20 ms

F

Temperaturkoeffizient von Ie bzw. Φe,

I

= 100 mA

F

Temperature coefficient of Ie or Φe, IF = 100 mA

Symbol
Symbol

L × B
L × W

t

, t

r

f

V

F

V

F

I

R

Φ

e

TC

I

Wert
Value

Einheit
Unit

0.3 × 0.3 mm

12 ns

1.5 (< 1.8)

2.4 (< 3.0)

V
V

0.01 (≤ 10) µA

40 mW

– 0.5 %/K

Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA

Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA

TC

TC

V

λ

– 0.7 mV/K

+ 0.2 nm/K

2005-02-21 3

Vorläufige Daten / Preliminary Data SFH 4250

Strahlstärke Ie in Achsrichtung

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity Ie in Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung
Parameter

Strahlstärke
Radiant intensity

I

= 100 mA, tp = 20 ms

F

Strahlstärke
Radiant intensity

I

= 1 A, tp = 100 µs

F

1)

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner2:1)

1)

Only one group in one packing unit, (variation lower 2:1)

Radiation Characteristics I

= f (ϕ)

rel

0˚10˚20˚40˚ 30˚

ϕ

1.0

Symbol Werte

Values

SFH 4250-R SFH 4250-S

I

e min

I

e max

I

e typ

OHL01660

10
20

16
32

100 140 mW/sr

Einheit
Unit

mW/sr
mW/sr

50˚

60˚

70˚

80˚

90˚

100˚

1.0 0.8 0.6 0.4

0.8

0.6

0.4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

2005-02-21 4

Vorläufige Daten / Preliminary Data SFH 4250

I

e

= f (I

OHL01715

)

F

Max. Permissible Forward Current

I

= f (TA), R

F

120

mA

100

I

F

80

60

40

20

= 300 K/W

thJA

OHL01716

Relative Spectral Emissi on

I

= f (λ)

rel

100

%

I

rel

80

60

40

20

OHL01714

Radiant Intensity

I

100 mA

e

Single pulse, tp = 20 µs

1

10

I

e

I

e (100 mA)

0

10

5

-1

10

5

-2

10

5

0

700

Forward Current IF = f (VF)
Single pulse, tp = 20 µs

0

10

A

I

F

-1

10

5

-2

10

5

-3

10

5

-4

10

0.5 1 1.5 2 2.5 V3

0

nm

950750 800 850

λ

OHL01713

V

F

-3

10

0

10

1

10

2

10

Permissible Pulse Handling

I

Capability

= f (τ), TA = 25 °C,

F

duty cycle D = parameter

t

P

T

=

OHF02505

t

P

T

10 10s10

t

1.6
A

I

F

1.4

1.2

1.0

0.8

0.6

0.4

D

=

D

0.005

0.01

0.02

0.033

0.05

0.1

0.2

0.5
1

0.2

0

1010 1010 10

I

mA

p

3

1055

F

I

F

210-1-2-3-4-5

0

0

40 60 80 120

20

˚C

2005-02-21 5

Vorläufige Daten / Preliminary Data SFH 4250

Maßzeichnung Package Outlines

3.0 (0.118)

2.6 (0.102)

2.3 (0.091)

0.8 (0.031)

0.6 (0.024)

3.4 (0.134)

Maße werden wie folgt ange geben: mm (inch) / Dimensions are s pecified as follows: mm (inch).

2.1 (0.083)

AA

3.0 (0.118)

CA

Package marking

0.1 (0.004) (typ.)

(2.4) (0.095)

3.7 (0.146)

0.18 (0.007)

0.12 (0.005)

3.3 (0.130)

2.1 (0.083)

1.7 (0.067)

4˚±1

0.5 (0.020)

1.1 (0.043)

0.9 (0.035)

0.7 (0.028)

0.6 (0.024)

0.4 (0.016)

A A

AC

GPLY6084

Gehäuse / Package weiß, klarer Verguss / white, clear resin
Anschlussbelegung

pin configuration

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Kathode: abgeschrägte Ecke
Cathode: beveled edge

Vorläufige Daten / Preliminary Data SFH 4250

Empfohlenes Lötpaddesign IR Flow Löten Recommended Solder Pad IR Reflow Soldering

Fläche darf elektrisch nicht beschaltet werden.

Padgeometrie für
verbesserte Wärmeableitung

Paddesign for
improved heat dissipation

2.3 (0.091)

0.8 (0.031)

1.1 (0.043)

3.7 (0.146)

0.7 (0.028)

1.5 (0.059)

3.3 (0.130)

Anode

Do not use this area for electrical contact.

3.3 (0.130)

11.1 (0.437)

Kathode/
Cathode

2

_

Fläche darf elektrisch nicht beschaltet werden.

Do not use this area for electrical contact.

Lötstoplack

Solder resist

Cu Fläche / 16 mm per pad
Cu-area

<

Empfohlenes Lötpaddesign Wellenlöten (TTW) Recommended Solder Pad TTW Soldering

Fläche darf elektrisch nicht beschaltet werden.

Do not use this area for electrical contact.

2 (0.079)

0.5 (0.020)

Kathode/
Cathode

Cu Fläche / > 16 mm per pad

Cu-area

6.1 (0.240)

2.8 (0.110)

2 (0.079)

6 (0.236)

2 (0.079)

3 (0.118)

Padgeometrie für
verbesserte Wärmeableitung

Paddesign for
improved heat dissipation

Anode

1 (0.039)

2.8 (0.110)

Fläche darf elektrisch nicht beschaltet werden.

Do not use this area for electrical contact.

OHLPY440

Bewegungsrichtung

der Platine

Lötstoplack

Solder resist

PCB-direction

2

OHAY1583

2005-02-21 7

Vorläufige Daten / Preliminary Data SFH 4250

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)

300

˚C

250

T

255 ˚C
240 ˚C

Maximum Solder Profile

Recommended Solder Profile

Minimum Solder Profile

217 ˚C

200

10 s min

30 s max

150

120 s max

100 s max

Ramp Down
6 K/s (max)

100

Ramp Up

50

3 K/s (max)

25 ˚C

0

0

50 100 150 200 250 300

t

Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)

OHLA0687

260 ˚C
245 ˚C
235 ˚C

+0 ˚C

-5 ˚C
±5 ˚C
+5 ˚C

-0 ˚C

s

300

C

250

T

235 C

200

150

100

50

0

0

C... 260

1. Welle

1. wave

ca 200 K/s

CC... 130100

50 100 150 200 250

10 s

Zwangskühlung

2 K/s

forced cooling

5 K/s

2005-02-21 8

2. Welle

2. wave

OHLY0598

Normalkurve
standard curve

Grenzkurven
limit curves

2 K/s

s

t

Vorläufige Daten / Preliminary Data SFH 4250

Published by
OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and sha ll not be c ons idered as assured characte ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances . For in fo rmation on the types in question ple as e c ont ac t our Sales Organization.

Packing

Please use the recycling operators k nown to you . We can als o help you – get in touch wit h your near est sales offic e.
By agreement we will take p acking material back, if it is sorted. You m ust bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.

Components used in life-su pport devices or systems must be expressly authorized fo r such purpose! Critical
components

1

A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

1

, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2

Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in

and sustain human life. If th ey fail , it is rea so nable to assume that the health of the us er m ay be endangered.

2005-02-21 9