Datasheet SFH 4209 Datasheet (OSRAM)

Leistungsstarke IR-Lumineszenzdiode
High Power Infrared Emitter

Lead (Pb) Free Product - RoHS Compliant

SFH 4209

Wesentliche Merkmale

• Leistungsstarke GaAs-LED (40mW)

• Hoher Wirkunsgrad bei kleinen Strömen

• Typische Peakwellenlänge 950nm

Anwendungen

• Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud

Tastatur, Joystick, Multimedia)

(IR

• Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung

• Batteriebetriebene Geräte (geringe
Stromaufnahme)

• Anwendungen mit hohen
Zuverlässigkeitsansprüchen bzw. erhöhten
Anforderungen

• Alarm- und Sicherungssysteme

• IR Freiraumübertragung

Typ
Type

Bestellnummer
Ordering Code

Features

• High Power GaAs-LED (40mW)

• High Efficiency at low currents

• Typical peak wavelength 950nm

Applications

• High data transmission rate up to 100 Mbaud
(IR

keyboard, Joystick, Multimedia)

• Analog and digital Hi-Fi audio an d vi deo s ignal
transmission

• Low power consumption (battery) equipment

• Suitable for professional and high-reliability
applications

• Alarm and safety equipment

• IR free air transmission

Strahlstärkegruppierung1) (IF = 100mA, tp = 20 ms)
Radiant Intensity Grouping

Ie (mW/sr)

1)

SFH 4209 Q65110A2501 24 (> 10)

1)

gemessen bei einem Raumwinkel Ω = 0.01 / measured at a solid angle of Ω = 0.01 sr

2005-03-31 1

Grenzwerte (TA = 25 ° C) Maximum Ratings

SFH 4209

Bezeichnung
Parameter

Betriebs- und Lagertemperatur
Operating and storage temperature range

Sperrspannung
Reverse voltage

Durchlaßstrom
Forward current

Stoßstrom, tp = 10 µs, D = 0
Surge current

Verlustleistung
Power dissipation

Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm

2

Thermal resistance junction - ambient mounted

2

on PC-board (FR4), padsize 16 mm

each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block

Symbol
Symbol

T

; T

op

stg

V

R

I

(DC) 100 mA

F

I

FSM

P

tot

R

thJA

R

thJS

Wert
Value

– 40 … + 100 ° C

3 V

2.2 A

180 mW

450

200

Einheit
Unit

K/W

K/W

2005-03-31 2

Kennwerte (TA = 25 ° C) Characteristics

SFH 4209

Bezeichnung
Parameter

Wellenlänge der Strahlung
Wavelength at peak emission

I

= 100 mA, tp = 20 ms

F

Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I

IF = 100 mA, t

= 20 ms

p

max

max

Abstrahlwinkel
Half angle

Aktive Chipfläche
Active chip area

Abmessungen der aktiven Chipfläche
Dimensions of the active chip area

Schaltzeiten, Ie von 10% auf 90% und von 90%

I

auf 10%, bei

= 100 mA, tp = 20 ms, RL = 50 Ω

F

Switching times, Ιe from 10% to 90% and from

I

90% to10%,

= 100 mA, tp = 20 ms, RL = 50 Ω

F

Durchlassspannung,
Forward voltage

I

= 100 mA, tp = 20 ms

F

I

= 1 A, tp = 100 µs

F

Sperrstrom
Reverse current

V

= 3 V

R

Gesamtstrahlungsfluss
Total radiant flux

I

= 100 mA, tp = 20 ms

F

Temperaturkoeffizient von Ie bzw. Φe,

I

= 100 mA

F

Temperature coefficient of Ie or Φe, IF = 100 mA

Symbol
Symbol

λ

peak

Wert
Value

Einheit
Unit

950 nm

∆λ 40 nm

ϕ ± 25 Grad

deg.

A

L × B

0.09 mm

0.3 × 0.3 mm

2

L × W
t

, t

r

V
V

I

R

Φ

e

TC

f

F
F

I

10 ns

1.5 (≤ 1.8)

3.2 (≤ 4.3)

V
V

0.01 (≤ 10) µA

40 mW

– 0.44 %/K

Temperaturkoeffizient von VF, IF = 100 mA

TC

Temperature coefficient of VF, IF = 100 mA
Temperaturkoeffizient von λ, IF = 100 mA

TC

Temperature coefficient of λ, IF = 100 mA

2005-03-31 3

V

λ

– 1.5 mV/K

+ 0.2 nm/K

SFH 4209

Strahlstärke Ie in Achsrichtung

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity Ie in Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Symbol Werte

Parameter

SFH 4209-R SFH 4209-S SFH 4209-T

Strahlstärke
Radiant intensity

I

= 100 mA, tp = 20 ms

F

Strahlstärke

I

e min

I

e max

I

e typ.

10
20

100 140 180 mW/sr

Radiant intensity

I

= 1A, tp = 100 µs

F

1)

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1)

1)

Only one group in one packing unit, (variation lower 2:1)

16
32

Values

25
50

Einheit
Unit

mW/sr
mW/sr

2005-03-31 4

Relative Spectral Emissi on

0˚10˚20˚30˚40˚

I

= f (λ)

rel

100

Ι

erel

80

OHF00777

I

e

Radiant Intensity

I

e

100 mA

= f (I

F

Single pulse, tp = 20 µs

OHF00809

Ι

e

Ι

e (100 mA)

2

10

SFH 4209

)

Max. Permissible Forward Current

I

= f (TA), R

F

120
mA

Ι

F

100

thJA

1)

OHF00359

60

40

20

0

850 900 950 1000 1100

Forward Current IF = f (VF)
single pulse, tp = 20 µs

4

10

mA

Ι

F

3

10

2

10

1

10

0

10

-1

10

OHF00784

0

10

R

thJA

= 375 K/W

60

80

-1

10

40

-2

10

20

-3

10

nm800

10 10110

23

10

λ

mA

Ι

40

10

F

0

0

20 40 60 80 100 120

˚C

T

A

Permissible Pulse Handling

I

Capability

= f (τ ), TA = 25 ° C,

F

duty cycle D = parameter

1

10

A

I

F

5

0

10

5

t

P

=

D

T

t

P

T

D

=

0.005

0.01

0.02

0.05

0.1

0.2

0.5
1

OHF00040

I

F

-2

10

-3

10

0

0.5 1 1.5 2 2.5 3 3.5 4.5

Radiation C har act e ris t ic s I

V

F

V

= f (ϕ)

rel

ϕ

1.0

-1

10

-5

10

10-410-310-210-110010

50˚

0.8

60˚

70˚

80˚

90˚

100˚

0.6

0.4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0

2005-03-31 5

1 2

t

p

OHL00732

10s

1)

Thermal resistance junction ­ambient mounted on PC-board
(FR4), pad size 16 mm

2

(each).

Maßzeichnung Package Outlines

SFH 4209

3.5 (0.138) max.

3.0 (0.118)

2.6 (0.102)

2.3 (0.091)

2.1 (0.083)

2.1 (0.083)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

1

3.4 (0.134)

3.0 (0.118)

2

Package
marking

Maße werden wie folgt ange geben: mm (inch) / Dimensions are s pe cified as follows: mm (inch).

3.7 (0.146)

3.3 (0.130)

1.1 (0.043)

0.5 (0.020)

0.1 (0.004) (typ.)

0.18 (0.007)

0.13 (0.005)

ø2.60 (0.102)

0.6 (0.024)

0.4 (0.016)

GEOY6956

ø2.55 (0.100)

Gehäuse / Package TOPLED® mit Linse (P-LCC-2) / TOPLED® with lens (P-LCC-2)
Anschlussbelegung

pin configuration
Farbe

Color

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1 = Anode / anode
2 = Kathode / cathode

weiß
white

Empfohlenes Lötpaddesign IR-Reflow Löten Recommended Solder Pad IR Reflow Soldering

2.6 (0.102)

2.6 (0.102)

SFH 4209

1.5 (0.059)

4.5 (0.177)

Padgeometrie für
verbesserte Wärmeableitung

Paddesign for
improved heat dissipation

Lötstopplack

Solder resist

4.5 (0.177)

1.5 (0.059)

Cu-Fläche > 16 mm

Cu-area > 16 mm

2

2

OHLPY970

2005-03-31 7

SFH 4209

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)

300

˚C

250

T

255 ˚C
240 ˚C

Maximum Solder Profile

Recommended Solder Profile

Minimum Solder Profile

217 ˚C

200

10 s min

30 s max

150

120 s max

100 s max

Ramp Down
6 K/s (max)

100

Ramp Up

50

3 K/s (max)

25 ˚C

0

0

50 100 150 200 250 300

t

Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)

OHLA0687

260 ˚C
245 ˚C
235 ˚C

+0 ˚C

-5 ˚C
±5 ˚C
+5 ˚C

-0 ˚C

s

300

C

250

T

235 C

200

150

100

50

0

0

C... 260

1. Welle

1. wave

ca 200 K/s

CC... 130100

50 100 150 200 250

10 s

Zwangskühlung

2 K/s

forced cooling

5 K/s

2005-03-31 8

2. Welle

2. wave

OHLY0598

Normalkurve
standard curve

Grenzkurven
limit curves

2 K/s

s

t

SFH 4209

Published by
OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and sha ll not be c ons idered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances . For in fo rmation on the types in question ple as e c ont ac t our Sales Organization.

Packing

Please use the recycling operators k nown to you . We can als o help you – get in touch wit h your near est sales offic e.
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incurred.

Components used in life-su pport devices or systems must be expressly authorized fo r such purpose! Critical
components

1

A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

1

, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2

Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in

and sustain human life. If they fail, it is re as onable to assume that the health of the us er may be endangered.

2005-03-31 9