Datasheet SFH331 Datasheet (Siemens)

SMT Multi TOPLED

3.0

2.6

2.3

2.1

0.8

0.6

3.0

3.4

Package marking
Emission color : super-red

32

CA

EC

41



(2.4)

3.7

3.3

0.1

typ

1.1

0.5

2.1

1.7

0.18

0.12

SFH 331

0.9

0.7

0.6

0.4

GPL06924

Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Typ
Type

Bestellnummer
Ordering Code

SFH 331 Q62702-P1634

Wesentliche Merkmale

● Geeignet für Vapor-Phase Löten und

IR-Reflow Löten

Features

● Suitable for vapor-phase and IR-reflow

soldering

Semiconductor Group 1 1997-11-01

Grenzwerte
Maximum Ratings

SFH 331

Bezeichnung
Description

Betriebstemperatur
Operating temperature range

Lagertemperatur
Storage temperature range

Sperrschichttemperatur
Junction temperature

Durchlaßstrom (LED)
Forward current (LED)

Kollektorstrom (Transistor)
Collector current (Transistor)

Stoßstrom
Surge current

t ≤ 10 µs, D = 0.005

Sperrspannung (LED)
Reverse voltage (LED)

Symbol
Symbol

T

op

T

stg

T

j

I

F

I

C

I

FM

V

R

Wert

Value

Einheit
Unit

LED Transistor

– 55 ... + 100 – 55 ... + 100

°

C

– 55 ... + 100 – 55 ... + 100 ˚C

+ 100 + 100 ˚C

30 – mA

–15mA

500 75 mA

5–V

Kollektor-Emitter Spannung (Transistor)

V

CE

–35V

Collector-emitter voltage (Transistor)
Verlustleistung

P

tot

100 165 mW

Total power dissipation
Wärmewiderstand Sperrschicht/Umgebung

Thermal resistance junction/ambient
Montage auf PC-Board*
(Padgröße ≥ 16 mm

2

)

R

th JA

450

450

K/W

mounting on pcb* (pad size ≥ 16 mm 2)
Sperrschicht / Lötstelle

R

th JS

350

–

K/W

junction / soldering joint

* PC-board: G30/FR4

Notes

Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom
Betriebszustand des anderen.

The stated max. ratings refer to the specified chip regardless of the operating status of the other
one.

Semiconductor Group 2 1997-11-01

Kennwerte LED (TA = 25 ˚C)
Characteristics LED

SFH 331

Bezeichnung
Description

Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)

I

= 10 mA

F

Dominantwellenlänge (typ.)
Dominant wavelength (typ.)

I

= 10 mA

F

Spektrale Bandbreite bei 50 %
Spectral bandwidth at 50 % I

I

= 10 mA

F

Abstrahlwinkel bei 50 %
Viewing angle at 50 % I

I

V

I

rel max

rel max

(Vollwinkel)

V

(typ.)
(typ.)

Durchlaßspannung (typ.)
Forward voltage (max.)

I

= 10 mA

F

Sperrstrom (typ.)
Reverse current (max.)

V

= 5 V

R

Kapazität (typ.)
Capacitance

V

= 0 V, f = 1 MHz

R

Schaltzeiten:
Switching times:

I

from 10 % to 90 % (typ.)

V

I

from 90 % to 10 % (typ.)

V

I

= 100 mA, tp = 10 µs, RL = 50 Ω

F

Lichtstärke (Gruppe JK) (typ.)
Luminous intensity (group JK)

I

= 10 mA

F

Symbol
Symbol

λ

peak

λ

dom

Wert
Value

Einheit
Unit

635 nm

628 nm

∆λ 45 nm

2ϕ 120 Grad

degr.

V
V

I
I

C

t
t

I

F
F

R
R

0

r
f

V

2.0

2.6

0.01
10

V
V

µA
µA

12 pF

300
150

ns
ns

6 (4.0 ... 12.5) mcd

Semiconductor Group 3 1997-11-01

Kennwerte Fototransistor (TA = 25oC, λ = 950 nm)
Characteristics Phototransistor

SFH 331

Bezeichnung
Description

Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity

Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S

max

Spectral range of sensitivity
S = 10% of S

max

Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm)

Abmessung der Chipfläche
Dimensions of chip area

Abstand Chipoberfläche zu Gehäuseober­fläche
Distance chip front to case surface

Halbwinkel
Half angle

Kapazität
Capacitance

V

= 0 V, f = 1 MHz, E = 0

CE

Dunkelstrom
Dark current

= 25 V, E = 0

V

CE

Fotostrom
Photocurrent

E

= 0.1 mW/cm2, VCE = 5 V

e

Anstiegszeit/Abfallzeit
Rise time/Fall time

I

= 1 mA, VCC = 5 V, RL = 1 kΩ

C

Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage

= 5 µA, Ee = 0.1 mW/cm

I

C

2

Symbol
Symbol

λ

S max

Wert
Value

Einheit
Unit

860 nm

λ 380 ... 1150 nm

A 0.045 mm

2

L × B 0.45 × 0.45 mm × mm

H 0.5 ... 0.7 mm

ϕ±60 Grad

degr.

C

CE

I

CEO

I

PCE

tr, t

V

CEsat

f

5.0 pF

1 (≤ 200) nA

≥ 16 µA

7 µs

150 mV

Semiconductor Group 4 1997-11-01

SFH 331

LED Radiation characteristics I
Phototransistor Directional characteristics S

50˚

60˚

70˚

80˚

90˚

100˚

1.0 0.8 0.6 0.4

LED Relative spectral emission I
V (λ) = Standard eye response curve

100

%

Φ

rel

80

= f (ϕ)

rel

0˚10˚20˚40˚ 30˚

ϕ

1.0

0.8

0.6

0.4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

= f (λ), TA = 25 ˚C, IF= 20 mA

rel

V

λ

rel

= f (ϕ)

OHL01660

OHL02350

60

40

20

0

400 450 500 550 600 650 700

super-red

nm

λ

Semiconductor Group 5 1997-11-01

SFH 331

Forward current IF = f (VF)

T

= 25 ˚C

A

2

10

Ι

mA

F

1

10

OHL02351

5

super-red

0

10

5

-1

10

1.0 1.4 1.8 2.2 2.6 3.0 3.4

V

V

F

Max. permissible forward current

I

= f (TA)

F

60

mA

Ι

F

50

OHL01661

Rel. luminous intensity

I

V

/ I

Ι

V

(10mA)

Ι

= f (IF), TA = 25 ˚C

V(10 mA)

1

10

V

0

10

5

-1

10

super-red

5

-2

10

5

-3

10

-1 0

55

10

10 10

Wavelength at peak emission

λ

= f (TA), IF = 20 mA

peak

690

λ

peak

nm

Perm. pulse handling capability I

Duty cycle D = parameter, T

OHL02316

12

mA

10

Ι

F

10

Ι

F

mA

10

10

Dominant wavelength λ

I

= 20 mA

OHL02104

F

690

λ

dom

5

nm

= f (tp)

F

= 25 ˚C

A

3

t

P

D

=

T

D

=

0.005

0.01

0.02

0.05

0.1

2

0.2

OHL01686

t

P

Ι

F

T

0.5

DC

1

= f (TA)

dom

s10-510-410-310-210-110010

t

p

OHL02105

1

40

30

20

10

0

Forward current V
I

= 10 mA

F

2.4

V

F

V

2.2

2.0

1.8

1.6

= f (TA)

F

super-red
orange
yellow

800

˚C

T

A

OHL02106

green

pure-green

650

650

super-red

630

610

590

570

100604020

550

orange

yellow

green
pure-green

0 20406080100

˚C

T

A

630

610

590

570

550

super-red

orange

yellow

green

pure-green

0 20406080100

˚C

T

A

Rel. luminous intensity

I

/ I

V

Ι

V

Ι

V

(25 ˚C)

= f (TA), IF = 10 mA

V(25 ˚C)

2.0

1.6

1.2

0.8

0.4

orange
super-red

yellow
green

pure-green

OHL02150

1.4
0 20406080100

˚C

T

A

0.0
0 20406080100

˚C

T

A

Semiconductor Group 6 1997-11-01

SFH 331

Phototransistor
Rel. spectral sensitivity S

100

S

rel

%

80

60

40

20

0

400 600 800 1000 1200

Total power dissipation

P

= f (TA)

tot

200

mW

P

tot

160

120

80

40

0

20 40 60 80 ˚C 100

0

rel

= f (λ)

OHF01121

nm

λ

OHF00871

T

A

Photocurrent I
E

= Parameter

e

0

10
mA

Ι

PCE

-1

10

-2

10

0

5 10 15 20 25 30 35

PCE

= f (VCE),

Capacitance

C

= f (VCE), f = 1 MHz, E = 0

CE

5.0

C

pF

CE

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5
0

-2

10

10-110010110

0.5

0.25

0.1

1

mW
cm

mW
cm

mW
cm

mW
cm

OHF01529

2

2

2

2

V

V

CE

OHF01528

V

V

CE

Dark current

I

= f (VCE), E = 0

CEO

1

10
nA

Ι

CEO

0

10

-1

10

-2

10

-3

10

0 5 10 15 20 25 30 35V

Photocurrent I
V

= 5 V

CE

1.6

Ι

PCE

Ι

25

PCE

1.4

PCE/IPCE25

1.2

1.0

0.8

0.6

0.4

0.2

2

0

0 25 50 75 100

-25

OHF01527

V

o

= f (TA),

OHF01524

T

CE

C

A

Dark current

I

= f (TA), VCE= 5 V, E = 0

CEO

3

10

Ι

CEO

2

10

1

10

0

10

-1

10

-25nA0 25 50 75 100

OHF01530

˚C

T

A

Photocurrent I

3

10

µ

A

Ι

PCE

2

10

1

10

0

10

-1

10

-3

10

= f (Ee), VCE= 5 V

PCE

-2

10

mW/cm

OHF01924

4
3
2

2

E

0

10

e

Semiconductor Group 7 1997-11-01